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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGR269 200 MHz, 35 dB gain reverse amplifier
Product specification Supersedes data of 2001 Oct 03 2002 Mar 05
Philips Semiconductors
Product specification
200 MHz, 35 dB gain reverse amplifier
FEATURES * Excellent linearity * Silicon nitride passivation * Rugged construction * Gold metallization ensures excellent reliability * 35 dB amplification up to 200 MHz. APPLICATIONS * Reverse amplifier in two-way CATV systems operating in the 5 to 200 MHz frequency range. DESCRIPTION High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC). PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output
BGR269
DESCRIPTION
handbook, halfpage
1
2
3
8 579
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 5 MHz f = 200 MHz VB = 24 V MIN. 34.5 35 145 - 160 TYP. 35 MAX. 35.5 36 175 UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Vi Tmb Tstg RF input voltage operating mounting base temperature storage temperature range PARAMETER - -20 -40 MIN. MAX. 50 +100 +100 UNIT dBmV C C
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Philips Semiconductors
Product specification
200 MHz, 35 dB gain reverse amplifier
CHARACTERISTICS Bandwidth 5 to 200 MHz; VB = 24 V; Tmb = 30 C; ZS = ZL = 75 . SYMBOL Gp SL FL PARAMETER power gain slope straight line CONDITIONS f = 5 MHz f = 200 MHz f = 5 to 200 MHz f = 10 to 190 MHz f = 190 to 200 MHz s11 s22 s21 s12 CTB input return losses output return losses phase response reverse isolation composite triple beat f = 5 to 200 MHz f = 5 to 200 MHz f = 5 MHz f = 5 to 200 MHz 6 chs flat; Vo = 50 dBmV; measured at 37 MHz; note 1 10 chs flat; Vo = 50 dBmV; measured at 67.25 MHz; note 2 flatness of frequency response f = 5 to 10 MHz MIN. 34.5 35 0 -0.1 -0.1 -0.1 20 20 -45 - - - - - - - - - - - - - - - - - - - - - - - - - 160 TYP. 35
BGR269
MAX. 35.5 36 0.6 0.4 0.5 0.4 - - 45 -42 -74 -68 -57 -66 -57 -50 -74 -74 -66 - -70 5.3 5.5 175
UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dB dB dB mA
28 chs flat; Vo = 50 dBmV; - measured at 199.25 MHz; note 3 Xmod cross modulation 6 chs flat; Vo = 50 dBmV; measured at 37 MHz; note 1 10 chs flat; Vo = 50 dBmV; measured at 25 MHz; note 2 28 chs flat; Vo = 50 dBmV; measured at 25 MHz; note 3 CSO composite second order distortion 6 chs flat; Vo = 50 dBmV; measured at 38 MHz; note 1 10 chs flat; Vo = 50 dBmV; measured at 68.5 MHz; note 2 28 chs flat; Vo = 50 dBmV; measured at 200.5 MHz; note 3 Vo d2 NF Itot output voltage second order distortion noise figure total current consumption dim = -60 dB; note 4 note 5 f = 70 MHz f = 200 MHz note 6 - - - - - - 62 - - - 145
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Philips Semiconductors
Product specification
200 MHz, 35 dB gain reverse amplifier
Notes 1. From the following frequencies: 7.00, 13.00, 19.00, 25.00, 31.00 and 37.00 MHz.
BGR269
2. From the following frequencies: 7.00, 13.00, 19.00, 25.00, 31.00, 37.00, 43.00, 55.25, 61.25 and 67.25 MHz. 3. From the following frequencies: 7.00, 13.00, 19.00, 25.00, 31.00, 37.00, 43.00, 55.25, 61.25, 67.25, 77.25, 83.25, 109.25, 115.25, 121.25, 127.25, 133.25, 139.25, 145.25, 151.25, 157.25, 163.25, 169.25, 175.25, 181.25, 187.25, 193.25 and 199.25 MHz. 4. Measured according to DIN45004B: fp = 197.25 MHz; Vp = Vo; fq = 204.25 MHz; Vq = Vo -6 dB; fr = 206.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 195.25 MHz. 5. fp = 83.25 MHz; Vp = 50 dBmV; fq = 115.25 MHz; Vq = 50 dBmV; measured at fp + fq = 198.5 MHz. 6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB = 35 V.
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Philips Semiconductors
Product specification
200 MHz, 35 dB gain reverse amplifier
PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
BGR269
SOT115J
D E Z p
A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9
c
U1
q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8
mm 20.8
0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38
38.1 25.4 10.2
4.2 44.75
6-32 0.25 UNC
OUTLINE VERSION SOT115J
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-02-06
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Philips Semiconductors
Product specification
200 MHz, 35 dB gain reverse amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BGR269
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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Philips Semiconductors
Product specification
200 MHz, 35 dB gain reverse amplifier
NOTES
BGR269
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Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp8
Date of release: 2002
Mar 05
Document order number:
9397 750 09455

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