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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG541 NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT223 envelope. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter
page
BFG541
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 140 C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 C IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C S212 F PL1 ITO insertion power gain noise figure output power at 1 dB gain compression third order intercept point IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - - - - 13 - - - TYP. - - - - 120 0.7 9 15 9 14 1.3 21 34
BFG541
MAX. 20 15 120 650 250 - - - - - 1.8 - -
UNIT V V mA mW pF GHz dB dB dB dB dBm dBm
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 140 C; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 2.5 120 650 150 175 UNIT V V V mA mW C C
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 140 C; note 1 THERMAL RESISTANCE 55 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 8 V IC = 40 mA; VCE = 8 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise figure Ic = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C PL1 ITO Vo d2 Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 ------------------------------------------------------------- dB. G UM = 10 log 2 2 1 - S 11 1 - S 22 2. IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2p-q) = 904 MHz.
2
BFG541
MIN. - 60 - - - - - - 13 - - - - - - -
TYP. - 120 2 1 0.7 9 15 9 14 1.3 1.9 2.1 21 34 500 -50
MAX. 50 250 - - - - - - - 1.8 2.4 - - - - -
UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm mV dB
output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion
Ic = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C note 2 note 3 note 4
3. dim = -60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = Zs = 75 ; Tamb = 25 C; Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz 4. IC = 40 mA; VCE = 8 V; Vo = 325 mV; Tamb = 25 C; fp = 250 MHz; fq = 560 MHz; measured at f(p+q) = 810 MHz September 1995 4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
handbook, halfpage
1000 Ptot
MRA654 - 1
handbook, halfpage
250
MRA655
(mW) 800
hFE 200
600
150
400
100
200
50
0 0 50 100 150 T ( o C) s 200
0 10-2
10-1
1
10 IC (mA)
102
VCE 10 V.
VCE = 8 V; Tj = 25 C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector current.
handbook, halfpage
1.0
MRA656
handbook, halfpage
12
MRA657
Cre (pF)
0.8
fT (GHz) VCE = 8 V 8 4V
0.6
0.4 4 0.2
0 0 4 8 VCB (V) 12
0 10-1
1
10
IC (mA)
102
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.4
Feedback capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
In Figs 6 to 9, GUM = maximum power gain; MSG = maximum stable gain; Gmax = maximum available gain.
BFG541
handbook, halfpage
25
MRA658
handbook, halfpage
25
MRA659
gain (dB) 20 Gmax GUM 10
gain (dB) 20
MSG 15
15
10
Gmax GUM
5
5
0 0 20 40 60 IC (mA) VCE = 8 V; f = 900 MHz. 80
0 0 20 40 60 IC (mA) VCE = 8 V; f = 2 GHz. 80
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
handbook, halfpage
50
MRA660
handbook, halfpage
50
MRA661
gain (dB) 40 GUM 30 MSG
gain (dB) 40 GUM MSG 30
20 Gmax 10
20 Gmax 10
0 10
102
103
f (MHz)
104
0 10
102
103
f (MHz)
104
IC = 10 mA; VCE = 8 V.
IC = 40 mA; VCE = 8 V.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
September 1995
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
MEA977
handbook, halfpage
-20
MEA976
d im (dB) -30
handbook, halfpage
-20
d2 (dB) -30
-40
-40
-50
-50
-60
-60
-70 10 20 30 40 50 60 I C (mA)
-70 10 20 30 40 50 60 I C (mA)
Fig.10 Intermodulation distortion as a function of collector current.
Fig.11 Second order intermodulation distortion as a function of collector current.
handbook, halfpage
5
MRA666
20 Gass
Fmin (dB) 4
handbook, halfpageI
5
MRA667
Fmin (dB)
C =10 mA
40 mA
20 Gass (dB) 15
(dB) f = 900 MHz 15 1000 MHz
4
Gass
3 2000 MHz 2 1000 MHz 900 MHz 500 MHz
Gass 2000 MHz Fmin
10
3
10
5
2 40 mA Fmin
5
1
0
1 10 mA
0
0 1 VCE = 8 V. 10 IC (mA)
-5 100
0 102 VCE = 8 V.
103
f (MHz)
-5 104
Fig.12 Minimum noise figure and associated available gain as functions of collector current.
Fig.13 Minimum noise figure and associated available gain as functions of frequency.
September 1995
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 G = 13 dB 0.2 G = 14 dB G = 15 dB 0.2 MS Fmin = 1.3 dB OPT 0.5 1 F = 1.5 dB 5 5 0.4 0.2 2 5 0 0
180 0 Gmax = 15.3 dB
0.2
F = 2 dB F = 3 dB
-135
0.5 1
2
-45
MRA668
1.0
-90 IC = 10 mA; VCE = 8 V; Zo = 50 ; f = 900 MHz.
Fig.14 Noise circle figure.
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 OPT 0.2 Fmin = 2.1 dB F = 2.5 dB F = 3 dB -135 0.5 F = 4 dB 1
MRA669
G = 7 dB G = 6 dB MS G = 8 dB Gmax = 8.5 dB 0.2 5
1
2
5
0
0
5
2
-45 1.0
-90 IC = 10 mA; VCE = 8 V; Zo = 50 ; f = 2 GHz.
Fig.15 Noise circle figure.
September 1995
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
handbook, full pagewidth
90 1.0 1 135 0.5 3 GHz 0.2 5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
0.2
40 MHz
5
-135
0.5 1
2
-45
MRA662
1.0
-90 IC = 40 mA; VCE = 8 V. Zo = 50 .
Fig.16 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135 40 MHz
45
180
3 GHz 50 40 30 20 10
0
-135
-45
-90 IC = 40 mA; VCE = 8 V.
MRA663
Fig.17 Common emitter forward transmission coefficient (S21).
September 1995
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
handbook, full pagewidth
90
135
45
3 GHz
0.5 180
0.4
0.3
0.2
0.1
40 MHz
0
-135
-45
-90 IC = 40 mA; VCE = 8 V.
MRA664
Fig.18 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 2 5 0 0
0.2 3 GHz 180 0 0.2 0.5 1
5
0.2 40 MHz
5
-135
0.5 1
2
-45
MRA665
1.0
-90 IC = 40 mA; VCE = 8 V. Zo = 50 .
Fig.19 Common emitter output reflection coefficient (S22).
September 1995
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BFG541
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
September 1995
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG541
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
12

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