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| BAT 17W Silicon Schottky Diodes Preliminary data * For mixer applications in the VHF/UHF range * For high-speed switching BAT 17-04W BAT 17-05W BAT 17-06W Type BAT 17-04W BAT 17-05W BAT 17-06W BAT 17W Marking Ordering Code 54 55 56 53 Q62702Q62702Q62702Q62702- Pin Configuration 1=A 1=A 1=C 1=A 2=C 2=A 2=C 2=3 = C/A 3 = C/C 3 = A/A 3=C Package SOT-323 SOT-323 SOT-323 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, BAT17W Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient, BAT17W Junction - ambient, BAT17-04W...06W Junction - soldering poin, BAT17W Junction - soldering point, BAT17-04W...06W Symbol Values 4 130 150 150 150 - 55 ... + 150 - 55 ... + 150 435 550 355 390 C Unit V mA mW VR IF TA 97C Ptot Tj Top Tstg RthJA RthJA RthJS RthJS Total power dissipation, BAT17-04...06W TS 92C Ptot K/W Semiconductor Group 1 Dec-20-1996 BAT 17W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 4 275 340 425 0.55 8 - V A 0.25 1.25 10 mV 200 250 350 350 450 600 pF 0.4 0.75 15 I(BR) = 100 A Reverse current IR VR = 3 V, TA = 25 C VR = 3 V, TA = 60 C VR = 4 V, TA = 25 C Forward voltage VF IF = 0.1 mA IF = 1 mA IF = 10 mA Diode capacitance CT RF VR = 1 V, f = 1 MHz Differential forward resistance IF 10mA/ 5 mA Semiconductor Group 2 Dec-20-1996 BAT 17W Forward current IF = f (VF) Diode capacitance CT = f (VR) f = 1MHz 10 2 mA 0.6 IF 10 1 TA = 25C TA = 85C TA = 125C 10 0 CT pF 0.4 0.3 10 -1 0.2 10 -2 0.0 0.2 0.4 0.6 V 1.0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF V VR 5.0 Leakage current IR = f (VR) TA = Parameter 10 2 uA 10 1 125C IR 10 0 85C 10 -1 10 -2 25C 10 -3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VR 5.0 Semiconductor Group 3 Dec-20-1996 |
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