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| BAS70-07W Silicon Schottky Diodes Preliminary data * General-purpose diodes for high-speed switching * Circuit protection * Voltage clamping * High-level detection and mixing ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration Type BAS70-07W 77s Q62702-A1186 Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t 10ms) Total Power dissipation Symbol Values 70 70 100 mW 250 - 55 ... + 150 C - 55 ... + 150 Unit V mA VR IF IFSM Ptot Top Tstg TS 91 C Operating temperature range Storage temperature Thermal Resistance Junction ambient 1) RthJA RthJS 285 145 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-08-1997 BAS70-07W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit V(BR) 70 375 705 880 410 750 1000 V I(BR) = 10 A Forward voltage VF 300 600 750 IF = 1 mA IF = 10 mA IF = 15 mA Reverse current IR 0.1 10 A VR = 50 V VR = 70 V AC characteristics Diode capacitance CT 1.5 34 2 2 pF ps 100 nH - VR = 0 V, f = 1 MHz Charge carrier life time rf Ls IF = 25 mA Forward resistance IF = 10 mA, f = 10 kHz Series inductance Semiconductor Group 2 Jan-08-1997 BAS70-07W Forward current IF = f (VF) TA = parameter Reverse current IR = f (VR) TA = Parameter Diode capacitance CT = f (VR) f = 1MHz Differential forward resistance RF = f(IF) f = 10kHz Semiconductor Group 3 Jan-08-1997 BAS70-07W Forward Current IF = f (TA*;TS) * mounted on PCB 40x40x1.5mm/6cm2Cu IF per diode 100 mA Rectifier Voltage vs. Input Voltage f = 900MHz RL = parameter in k 10 4 mV 10 3 IF 80 70 Vout 10 2 TS 60 50 40 30 20 10 -2 10 0 0 10 -3 0 10 1 2 3 10 1 TA 10 0 1000 500 200 100 50 20 RL=10 10 -1 20 40 60 80 100 120 C 150 TA,TS 10 10 10 mV Vin Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Jan-08-1997 |
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