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Rev 2: Sep 2004
AOD422, AOD422L (Green Product) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AOD422L (Green Product) is offered in a Lead Free package.
Features
VDS (V) = 20V ID = 10 A RDS(ON) < 22m (VGS = 4.5V) RDS(ON) < 26m (VGS = 2.5V) RDS(ON) < 34m (VGS = 1.8V) ESD Rating: 2000V HBM
TO-252 D-PAK
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation
B C
Maximum 20 8 10 10 30 15 26 50 20 2.5 1.6 -55 to 150
Units V V A A mJ W W C
TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG
TC=100C TA=25C TA=70C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 16.7 40 1.9
Max 25 50 2.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOD422, AOD422L Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=10A TJ=125C VGS=2.5V, ID=8A 0.4 30 18 25 21 26 30 0.76 22 31 26 34 1 10 0.6 Min 20 1 5 1 10 1 Typ Max Units V A A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Static Drain-Source On-Resistance
gFS VSD IS
VGS=1.8V, ID=5A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V G Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1160 187 146 1.5 16 0.8 3.8 6.2 12.7 51.7 16 17.6 6.5
VGS=4.5V, VDS=10V, ID=10A
VGS=5V, VDS=10V, RL=1, RGEN=3
IF=10A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature of 150C may be used if the PCB allows it to. B. The power dissipation P is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper D dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD422, AOD422L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 8V VGS =2V 20 ID(A) VGS =1.5V ID(A) 10 125C 25C 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS(Volts) Figure 1: On-Regions Characteristics VGS(Volts) Figure 2: Transfer Characteristics 20 VGS=5V 15
10 VGS =1V 0 5
40 VGS =1.8V RDS(ON)(m) 30 VGS =2.5V 20 VGS =4.5V 10 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalize ON-Resistance
1.6 VGS=2.5V ID=8A VGS=1.8V ID=5A VGS=4.5V ID=10A
1.4
1.2
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
60 ID=10A 50 RDS(ON)(m) 40 30 20 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C
1E+01 1E+00 1E-01 IS(A) 1E-02 1E-03 25C 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
AOD422, AOD422L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000 VDS=10V ID=10A Capacitance (pF) 1600 Ciss 1200 800 400 0 0 5 10 15 20 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss
5 4 VGS(Volts) 3 2 1 0
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s
60
50
TJ(Max)=150C TA=25C
ID (Amps)
10.0
40 Power (W)
1ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms
30
20
10
0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse T 100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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