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| N-CHANNEL 30V - 0.0072 - 60A D2PAK STripFETTM III POWER MOSFET FOR DC-DC CONVERSION TYPE STB70NH03L s s s s s s STB70NH03L TARGET DATA VDSS 30 V RDS(on) <0.009 ID 60 A(#) TYPICAL RDS(on) = 0.0072 @ 10V RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 (Suffix "T4") DESCRIPTION The STB70NH03L utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC-DC CONVERTERS Ordering Information SALES TYPE STB70NH03LT4 s MARKING B700NH03L PACKAGE TO-263 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(#) ID(#) IDM(*) Ptot EAS (1) Tstg Tj July 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 20 60 50 240 85 1 TBD -55 to 175 (#) Value limited by wire bonding Unit V V V A A A W W/C mJ C (*) Pulse width limited by safe operating area. 1/6 STB70NH03L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.0 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 30 A ID = 30 A Min. 1 0.0072 0.009 0.009 0.012 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions VDS = 15 V ID = 30 A Min. Typ. TBD 2000 420 210 Max. Unit S pF pF pF VDS = 15V f = 1 MHz VGS = 0 f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1.0 2/6 STB70NH03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 30 A VDD = 15 V VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD=15V ID=60A VGS=10V Min. Typ. TBD TBD 35 TBD TBD 47 Max. Unit ns ns nC nC nC SWITCHING OFF(*) Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 15 V RG = 4.7, ID = 30 A VGS = 10 V Min. Typ. TBD TBD Max. Unit ns ns SOURCE DRAIN DIODE(*) Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A VGS = 0 TBD TBD TBD Test Conditions Min. Typ. Max. 60 240 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 60 A Tj = 150C VDD = 15 V (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by Tjmax 3/6 STB70NH03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STB70NH03L D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 5/6 STB70NH03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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