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| STT1NF100 N-CHANNEL 100V - 0.7 - 1A SOT23-6L STripFETTM II POWER MOSFET PRELIMINARY DATA TYPE STT1NF100 s s s VDSS 100V RDS(on) <0.8 ID 1A TYPICAL RDS(on) = 0.7 EXCEPTIONAL dv/dt CAPABILITY VERY LOW Qg SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION s MARKING STQ0 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 100 100 20 1 0.6 4 1.6 0.013 20 - 55 to 150 (1) ISD 1A, di/dt 350A/s, VDD V(BR)DSS, Tj TJMAX. Unit V V V A A A W W/C V/ns C (q) Pulse width limited by safe operating area September 2002 1/6 STT1NF100 THERMAL DATA Rthj-amb(*) Tl Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 78 260 C/W C (*) When mounted on FR-4 board of 1inch pad, 0.5oz Cu ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 100 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 0.5 A Min. 2 0.7 0.8 Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =15V , ID =1A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1 105 20 9 Max. Unit S pF pF pF 2/6 STT1NF100 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 50V, ID = 0.5A RG = 4.7 VGS = 10V (see test circuit, Figure 1) VDD = 50V, ID = 1A, VGS = 10V (see test circuit, Figure 2) Min. Typ. 4 5.5 4 1 1.5 6 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 50V, ID = 0.5A, RG = 4.7, VGS = 10V (see test circuit, Figure 1) Min. Typ. 13 6.5 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1A, VGS = 0 ISD = 1A, di/dt = 100A/s, VDD = 20V, Tj = 150C (see test circuit, Figure 3) 45 60 2.7 Test Conditions Min. Typ. Max. 1 4 1.2 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STT1NF100 Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 STT1NF100 TSOP-6 MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022 DIM. A A2 A1 b e1 e c L E D E1 5/6 STT1NF100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 6/6 |
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