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| (R) BYW100-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 1.5 A 200 V 150 C 0.85 V FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times The specifications and curves enable the determination of trr and IRM at 100C under users conditions. s s s s DO-15 BYW100-200 DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values) Symbol VRRM IFRM IF(AV) IFSM Tstg Tj TL Parameter Repetitive peak reverse voltage Repetitive peak forward current * Average forward current* Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s at 4mm from case tp = 5s F = 1KHz Ta = 95C = 0.5 tp=10 ms Sinusoidal Value 200 80 1.5 50 -65 +150 + 150 230 Unit V A A A C C C * On infinitive heatsink with 10mm lead length October 2001 - Ed: 4B 1/5 BYW100-200 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient* Parameter Value 45 Unit C/W * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 100C VF ** Forward voltage drop Tj = 25C Tj = 100C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2 % Min. Typ. Max. 10 0.5 Unit A mA V VR = VRRM IF = 4.5A IF = 1.5A 0.78 1.2 0.85 To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr tfr VFP Qrr Tests conditions IF = 1A dIF/dt = - 50A/s VR = 30V IF = 1.5A dIF/dt = - 50A/s Measured at 1.1 x VFmax IF = 1.5A dIF/dt = - 50A/s IF = 1.5A dIF/dt = - 20A/s VR 30V Tj = 25C Tj = 25C Tj = 25C Tj = 25C 30 5 10 Min. Typ. Max. 35 Unit ns ns V nC 2/5 BYW100-200 Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 IF(av) (A) 0.8 1.0 1.2 =tp/T T = 0.05 = 0.1 = 0.2 = 0.5 =1 Fig. 2: Average forward current versus ambient temperature (=0.5). 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF(av)(A) Rth(j-a)=Rth(j-l) Rth(j-a)=100C/W tp Tamb(C) 0 25 50 75 100 125 150 1.4 1.6 1.8 Fig. 3: Thermal resistance versus lead length. Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu) = 35m). Zth(j-a)/Rth(j-a) Rth(C/W) 110 100 90 80 70 60 50 40 30 20 10 0 Rth(j-a) 1.00 = 0.5 = 0.2 Rth(j-l) 0.10 = 0.1 Single pulse Lleads(mm) 5 10 15 20 25 tp(s) 1E+0 1E+1 1E+2 5E+2 0.01 1E-2 1E-1 Fig. 5: Forward voltage drop versus forward current (maximum values). 50.00 10.00 Tj=25C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) F=1MHz Tj=25C IFM(A) 20 Tj=100C (Typical values) 10 5 Tj=100C 1.00 2 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 VR(V) 1 1 10 100 200 3/5 BYW100-200 Fig. 7: Reverse recovery time versus dIF/dt. Fig. 8: Peak reverse recovery current versus dIF/dt. 2.5 Tj=100C IF=1.5A VR=30V 90% confidence 150 trr(ns) IRM(A) IF=1.5A VR=30V 90% confidence 2.0 1.5 100 Tj=25C Tj=100C 1.0 50 0.5 0 dIF/dt(A/s) 1 10 100 Tj=25C 0.0 dIF/dt(A/s) 1 10 100 Fig. 9: Dynamic parameters versus junction temperature. 250 % Qrr 200 IRM 150 trr 100 25 50 75 Tj(C) 100 125 4/5 BYW100-200 PACKAGE MECHANICAL DATA DO-15 DIMENSIONS C A C REF. Millimeters Min. Max. 6.75 3.53 31 0.88 Inches Min. 0.238 0.116 1.024 0.028 Max. 0.266 0.139 1.220 0.035 A B D B 6.05 2.95 26 0.71 C D Ordering code BYW100-200 BYW100-200RL s Marking BYW100-200 BYW100-200 Package DO-15 DO-15 Weight 0.4 g 0.4 g Base qty 1000 6000 Delivery mode Ammopack Tape and reel s White band indicates cathode Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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