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| DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 100 W min. with 13 dB gain over 869-894 MHz * 10:1 LOAD VSWR CAPABILITY * BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CDMA / 9ch FWD Pout = 20W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-100W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-100W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC) Symbol VDD ID PDISS TCASE Pamb Supply voltage Drain Current Power dissipation at Tcase = +85C Operating Case Temperature Max. Ambient Temperature Parameter Value 32 12 145 -20 to +85 +55 Unit V A W oC oC ORDER CODE DB-900-100W MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm November, 20 2002 1/6 DB-900-100W ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA) Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 100 W Over frequency range: 869 - 894 MHz Over frequency range and @ POUT = 100 W POUT from 0.1W to 100 W P1dB Input return Loss POUT from 0.1W to 100 W POUT = 100 W Load Mismatch all phases @ POUT = 100 W 10:1 VSWR all phases and POUT from 0.1 to 100W POUT = 100 WPEP 10:1 -76 -25 dBc dBc 40 45 -20 -40 -15 -30 Test Conditions Min. 869 12.5 100 +/- 0.5 1 13 Typ. Max. 894 Unit MHz dB W dB dB % dB dBc TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 350mA) Frequency Pout CH PWR (W) 10 10 10 20 20 20 Pout CH PWR (dBm ) 40.0 40.0 40.0 43.0 43.0 43.0 ACPR -750 KHz (dBc) 53.4 54.2 53.2 45.0 45.1 45.2 ACPR +750 KHz (dBc) 50.8 51.7 51.7 45.0 45.4 45.7 ACPR -1.98 MHz (dBc) 67.0 68.6 69.0 64.0 64.7 66.8 ACPR +1.98 MHz (dBc) 67.0 68.3 69.0 64.0 64.7 66.5 3.5 22.0 2.5 15.4 I total (A) Nd (MHz) 865 880 895 865 880 895 (%) 2/6 DB-900-100W TYPICAL PERFORMANCE Power Gain vs Output Power Gp (dB) 18 17 16 895 MHz Power Gain vs Frequency Gp (dB) 18 17 16 15 15 880 MHz Pout = 15W Pout = 100W Pout = 110W 14 13 12 11 10 1 865 MHz 14 13 12 11 10 Vdd = 26 V Idq = 2 x 200mA Vdd = 26 V Idq = 2 x 200mA 10 100 1000 860 865 870 875 880 885 890 895 900 Pout (W) f (MHz) Efficiency vs Frequency Nd (%) 60 55 50 45 Pout = 110W 40 Pout = 100W 35 Vdd = 26 V Idq = 2 x 200mA 30 860 865 870 875 880 885 890 895 900 f (MHz) 3/6 DB-900-100W TEST FIXTURE COMPONENT LAYOUT CV1 CV2 Ref. ETSA c07/2000 - Ed1 TEST CIRCUIT PHOTOMASTER Ref. ETSA c07/2000 - Ed1 4/6 DB-900-100W TEST CIRCUIT COMPONENT PART LIST COMPONENT T1, T2 C1, C2, C23, C24 C3, C4, C12, C14 C5, C6, C17, C18 C7, C8, C9, C10, C11, C13 C15, C16 C19, C20 C26, C27 C21, C22 C25 CV1, CV2 P1, P2 R1,R7 R2 R3, R4 R5, R6 D1, D2 SM1, SM2 BOARD SUBSTRATE BACK SIDE CERAMIC CHIP CAPACITORS DESCRIPTION PD57060S TRANSISTOR 47pF - 500V CERAMIC CHIP CAPACITOR 6.8pF - 500V CERAMIC CHIP CAPACITOR 100pF - 500V CERAMIC CHIP CAPACITOR 10pF - 500V CERAMIC CHIP CAPACITOR 100nF - 63V CERAMIC CHIP CAPACITOR 1F / 35V ELECTROLYTIC CAPACITOR 3.3pF - 500V CERAMIC CHIP CAPACITOR 4.7pF - 500V CERAMIC CHIP CAPACITOR 0.5pF - 500V CERAMIC CHIP CAPACITOR ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V 10K Ohms MULTITURN POTENTIOMETER 100 Ohms 1/4W 1206 SMD CHIP RESISTOR 50 Ohms 30W - 4GHz LOAD 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR 10K Ohms 1/4W 1206 SMD CHIP RESISTOR ZENER DIODE 5V - 500 mW SOD80 90 SMD HYBRID COUPLER ANAREN Xinger 1304-3 METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35 TEFLON-GLASS Er = 2.55 COPPER FLANGE 2 mm THICKNESS ATC100B or EQUIVALENT 5/6 DB-900-100W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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