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| U440/441 Matched N-Channel JFET Pairs Product Summary Part Number U440 U441 VGS(off) (V) -1 to -6 -1 to -6 V(BR)GSS Min (V) gfs Min (mS) -25 -25 4.5 4.5 IG Typ (pA) -1 -1 jVGS1 - VGS2j Typ (mV) 10 20 Features D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 85 dB. Benefits D Minimum Parasitics Ensuring Maximum High-Frequency Performance D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal Applications D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Description The U440/441 are matched pairs of JFETs mounted in a single TO-71 package. This two-chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The hermetically-sealed TO-71 package is available with full military screening per MIL-S-19500 (see Military Information). For similar products in SO-8 packaging see the SST440/SST441 data sheet. For low-noise opions, see the SST/U401 series data sheet. For low-leakage alternatives, see the U421/423 data sheet. TO-71 S1 1 D1 2 3 G1 Top View 4 S2 6 5 D2 G2 Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 4 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70251. Siliconix P-37405--Rev. C, 04-Jul-94 1 U440/441 Specificationsa Limits U440 U441 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 5 mA TA = 125_C IG = 1 mA , VDS = 0 V -35 -3.5 15 -1 -2 -1 -0.3 0.7 -25 -1 6 -6 30 -500 -25 V -1 6 -6 30 -500 mA pA nA -500 -500 pA nA V Gate Operating Current Gate-Source Forward Voltage Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en 6 VDS = 10 V, ID = 5 mA S f = 1 kHz 70 3 VDS = 10 V, ID = 5 mA S f = 1 MHz VDS = 10 V, ID = 5 mA f = 10 kHz pF 1 4 nV Hz 4.5 9 200 4.5 9 200 mS mS Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratiod Transconductance Ratiod Common Mode Rejection Ratio |VGS1 VGS2| VDG = 10 V, ID = 5 mA VDG = 10 V, ID = 5 mA TA = -55 to 125_C VDS = 10 V, VGS = 0 V VDS = 10 V, ID = 5 mA f = 1 kHz VDG = 5 to 10 V, ID = 5 mA 6 10 20 mV mV/_C D|VGS1 VGS2| DT I DSS1 I DSS2 gfs1 gfs2 CMRR 20 0.97 0.97 85 dB Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Assumes smaller value in the numerator. NZFD 2 Siliconix P-37405--Rev. C, 04-Jul-94 U440/441 Typical Characteristics 50 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 20 gfs - Forward Transconductance (mS) 100 nA 10 nA Gate Leakage Current IG(on) @ ID 40 16 TA = 125_C I G - Gate Leakage 1 nA 100 pA 10 pA TA = 25_C 1 pA 0.1 pA 0 4 8 12 16 20 VDG - Drain-Gate Voltage (V) IGSS @ 25_C ID = 10 mA IGSS @ 125_C 1 mA 1 mA 10 mA 30 12 20 gfs 8 10 IDSS 4 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 10 Output Characteristics VGS(off) = -2 V 30 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V 8 I D - Drain Current (mA) I D - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V 2 -0.8 V -1.0 V -1.2 V 0 2 4 6 8 10 24 -1.0 V 18 -1.5 V -2.0 V 12 -2.5 V -3.0 V 6 -3.5 V 0 VDS - Drain-Source Voltage (V) 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) Output Characteristics 5 VGS(off) = -2 V 4 I D - Drain Current (mA) VGS = 0 V -0.2 V I D - Drain Current (mA) -0.4 V 3 -0.6 V 2 -0.8 V 1 -1.0 V -1.2 V 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 0 0 0.2 12 15 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V 9 -2.0 V 6 -1.0 V -1.5 V -2.5 V -3.0 V 3 -3.5 V 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Siliconix P-37405--Rev. C, 04-Jul-94 3 U440/441 Typical Characteristics (Cont'd) 10 Transfer Characteristics VGS(off) = -2 V VDS = 10 V 30 Transfer Characteristics VGS(off) = -5 V VDS = 10 V 8 I D - Drain Current (mA) TA = -55_C 6 25_C I D - Drain Current (mA) 24 TA = -55_C 18 25_C 12 125_C 4 125_C 2 6 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 10 g fs - Forward Transconductance (mS) Transconductance vs. Gate-Source Voltage g fs - Forward Transconductance (mS) VGS(off) = -2 V VDS = 10 V f = 1 kHz 10 Transconductance vs. Gate-Source Voltage VGS(off) = -5 V 8 TA = -55_C 6 125_C 4 25_C 8 TA = -55_C 25_C 6 125_C 4 2 2 VDS = 10 V f = 1 kHz 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 50 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( W ) g fs R L AV + 1 ) R g L os 200 On-Resistance vs. Drain Current 40 A V - Voltage Gain Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 160 VGS(off) = -2 V 30 120 20 VGS(off) = -5 V VGS(off) = -2 V 80 VGS(off) = -5 V 10 40 TA = 25_C 0 1 10 ID - Drain Current (mA) 100 0 0.1 1 ID - Drain Current (mA) 10 4 Siliconix P-37405--Rev. C, 04-Jul-94 U440/441 Typical Characteristics (Cont'd) 10 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 5 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 8 4 6 VDS = 5 V 4 VDS = 0 V 3 VDS = 5 V 2 VDS = 0 V 1 VDS = 10 V 2 VDS = 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Input Admittance 100 TA = 25_C VDS = 10 V ID = 10 mA gig bis (mS) 100 TA = 25_C VDS = 10 V ID = 10 mA 10 -bfs Forward Admittance 10 (mS) -gfg 1 big 1 bfg gfs gis 0.1 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) 10 TA = 25_C VDS = 10 V ID = 10 mA 1 (mS) -brs Reverse Admittance 100 TA = 25_C VDS = 10 V ID = 10 mA 10 (mS) Output Admittance -brg 0.1 -grg -grs bog, bos 1 grg 0.1 gog, gos 500 1000 100 200 500 1000 0.01 100 200 f - Frequency (MHz) f - Frequency (MHz) Siliconix P-37405--Rev. C, 04-Jul-94 5 U440/441 Typical Characteristics (Cont'd) 50 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 150 Output Conductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz (nV / Hz) g os - Output Conductance ( mS) 40 120 TA = -55_C 90 25_C 60 30 ID = 1 mA 20 e n - Noise Voltage 10 ID = 10 mA 30 125_C 0 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0.1 1 ID - Drain Current (mA) 10 200 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage gos 200 g fs - Forward Transconductance (mS) 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz g os - Output Conductance ( mS) 160 160 8 TA = -55_C 6 25_C 4 125_C 2 120 120 80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -2 -4 -6 -8 80 40 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 -10 0 0.1 1 ID - Drain Current (mA) 10 6 Siliconix P-37405--Rev. C, 04-Jul-94 |
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