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| 2N3819 Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) v -8 V(BR)GSS MIN (V) -25 gfs MIN (MS) 2 IDSS MIN (MA) 2 FEATURES D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet. TO-226AA (TO-92) S 1 G 2 D 3 Top View ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300_C Power DissipationA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes A. Derate 2.8 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52424--Rev. C, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 1 2N3819 Siliconix SPECIFICATIONSA LIMITS PARAMETER STATIC Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain CurrentC Gate Reverse Current Gate Operating CurrentD Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage DYNAMIC Common Source Common-Source Forward TransconductanceD Common-Source Output ConductanceD Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise VoltageD f = 1 kHz gfs gos Ciss Crss en VDS = 15 V VGS = 0 V f = 100 MHz f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz V V, VDS = 10 V, VGS = 0 V, f = 100 Hz 2 1.6 5.5 5.5 25 2.2 0.7 6 50 8 4 mS pF F nV Hz NH 6.5 mS V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = -8 V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V -0.5 2 -25 -35 -3 10 -0.002 -0.002 -20 2 150 -2.5 0.7 -7.5 V -8 20 -2 -2 mA nA mA pA A W V SYMBOL TEST CONDITIONS MIN TYPB MAX UNIT Notes A. TA = 25_C unless otherwise noted. B. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. C. Pulse test: PW v300 ms, duty cycle v2%. D. This parameter not registered with JEDEC. TYPICAL CHARACTERISTICS 20 Drain Current and Transconductance vs. Gate Source Cutoff Voltage 10 r DS(on) Drain-Source On-Resistance ( W ) - g fs - Forward Transconductance (mS) 500 On Resistance and Output Conductance vs. Gate Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 100 I DSS Saturation Drain Current (mA) - 16 IDSS g os- Output Conductance ( mS) 8 400 80 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDS = 15 V, VGS = 0 V f = 1 kHz 2 100 20 0 0 -2 -4 -6 -8 -10 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52424--Rev. C, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 2 2N3819 Siliconix TYPICAL CHARACTERISTICS Common Source Forward Transconductance vs. Drain Current VGS(off) = -3 V 10 nA g fs - Forward Transconductance (mS) 1 mA 0.1 mA I G - Gate Leakage 1 nA TA = 125_C IGSS @ 125_C 5 mA 10 pA TA = 25_C IGSS @ 25_C 1 mA 0.1 mA 1 pA 8 TA = -55_C 6 25_C 4 125_C 2 VDS = 10 V f = 1 kHz 100 nA Gate Leakage Current 5 mA 10 100 pA 0.1 pA 0 10 VDG - Drain-Gate Voltage (V) 20 0 0.1 1 ID - Drain Current (mA) 10 Output Characteristics 10 VGS(off) = -2 V 8 I D - Drain Current (mA) I D - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V -0.8 V 2 -1.0 V -1.2 V -1.4 V 0 2 4 6 8 10 12 15 Output Characteristics VGS(off) = -3 V VGS = 0 V 9 -0.3 V -0.6 V 6 -0.9 V -1.2 V 3 -1.5 V -1.8 V 0 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Transfer Characteristics 10 VGS(off) = -2 V 8 I D - Drain Current (mA) TA = -55_C 6 25_C I D - Drain Current (mA) VDS = 10 V 8 10 Transfer Characteristics VGS(off) = -3 V VDS = 10 V TA = -55_C 25_C 6 125_C 4 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52424--Rev. C, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 3 2N3819 Siliconix TYPICAL CHARACTERISTICS Transconductance vs. Gate Source Voltage 10 VGS(off) = -2 V g fs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C VDS = 10 V f = 1 kHz Transconductance vs. Gate Source Voltgage 10 VGS(off) = -3 V g fs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C VDS = 10 V f = 1 kHz 4 125_C 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) On Resistance vs. Drain Current 300 r DS(on) Drain-Source On-Resistance ( W ) - TA = -55_C 240 A V - Voltage Gain VGS(off) = -2 V 180 -3 V 120 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID 80 60 40 VGS(off) = -2 V 60 20 -3 V 0 0.1 1 ID - Drain Current (mA) 10 0 0.1 1 ID - Drain Current (mA) 10 5 Common Source Input Capacitance vs. Gate Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 3.0 Common Source Reverse Feedback Capacitance vs. Gate Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 4 2.4 3 VDS = 0 V 1.8 2 1.2 VDS = 0 V 1 VDS = 10 V 0.6 VDS = 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52424--Rev. C, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 4 2N3819 Siliconix TYPICAL CHARACTERISTICS Input Admittance 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 gis (mS) (mS) 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 gfs Forward Admittance bis -bis 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Reverse Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 Output Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bos -brs 1 (mS) (mS) 1 gos -grs 0.1 0.1 0.01 100 200 500 1000 0.01 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency 20 ( nV / Hz ) VGS(off) = -3 V 16 VDS = 10 V g os- Output Conductance ( mS) 20 Output Conductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz 16 TA = -55_C 12 25_C 8 125_C 4 en - Noise Voltage 12 8 ID = 5 mA 4 ID = IDSS 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0.1 1 ID - Drain Current (mA) 10 Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52424--Rev. C, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 5 |
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