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| TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) -20 20 rDS(on) Max (W) 1.4 @ VGS = -10 V 3.5 @ VGS = -4.5 V VGS(th) (V) -1.3 to - 3 V -1.3 to - 3 V ID (A) -0.41 -0.27 Features D D D D D High-Side Switching Low On-Resistance: 0.9 W Low Threshold: -2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 pF Benefits D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-236 (SOT-23) G 1 3 D S 2 Top View TP0202T (P3)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit -20 "20 -0.41 -0.26 -0.75 0.35 0.22 357 -55 to 150 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. W _C/W _C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70208. Applications information may also be obtained via FaxBack, request document #70611. Siliconix S-52426--Rev. F, 14-Apr-97 1 TP0202T Specificationsa Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentc Drain-Source On Resistance Drain Source On-Resistancec Forward Transconductance c Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = -10 mA VDS = VGS, ID = -0.25 mA VDS = 0 V, VGS = "20 V VDS = -16 V, VGS = 0 V TJ = 55_C VDS = -10 V, VGS = -10 V VGS = -4.5 V, ID = -0.05 A VGS = -10 V, ID = -0.2 A VDS = -10 V, ID = -0.2 A IS = -0.25 A, VGS = 0 V 250 -0.5 -0.75 1.7 0.9 600 -0.9 -1.5 3.5 1.4 -20 -1.3 -25 -2.1 -3 "100 -1 -10 V nA mA A W mS V Symbol Test Conditions Min Typb Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V, VGS = 0 V, f = 1 MHz VDS -16 V, VGS =-10 V, ID ^ -200 mA 2700 500 600 55 50 18 pF pC Switchingd Turn-On Turn On Time td(on) tr Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = -15 V, RL = 75 W ID ^ -0 2 A VGEN = -10 V -0.2 A, RG = 6 W 8 20 20 30 12 30 ns 35 40 VPBP02 2 Siliconix S-52426--Rev. F, 14-Apr-97 TP0202T Typical Characteristics (25_C Unless Otherwise Noted) 0.8 Output Characteristics 5V 1.0 Transfer Characteristics TC = -55_C 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.6 VGS = 10, 9, 8, 7, 6 V 25_C 0.6 125_C 0.4 4V 0.2 3V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 0.4 0.2 0 0 1.5 3.0 4.5 6.0 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-Source Voltage 5 On-Resistance vs. Drain Current rDS(on) - On-Resistance ( W ) ID = 200 mA 3 rDS(on) - On-Resistance ( W ) 4 4 3 VGS = 4.5 V 2 10 V 1 2 1 50 mA 0 0 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) 0 0 0.1 0.2 0.3 0.4 0.5 ID - Drain Current (A) 180 160 140 C - Capacitance (pF) 120 100 80 60 40 20 0 0 4 Crss Ciss Coss Capacitance VGS - Gate-to-Source Voltage (V) 20 ID = 200 mA 15 Gate Charge 10 VDS @ 10 V VDS @ 16 V 5 0 8 12 16 20 0 1000 2000 3000 4000 5000 6000 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Siliconix S-52426--Rev. F, 14-Apr-97 3 TP0202T Typical Characteristics (25_C Unless Otherwise Noted) On-Resistance vs. Junction Temperature 1.5 1.4 rDS(on) - On-Resistance ( W ) (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 0.001 -25 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) VGS = 4.5 V ID = 50 mA VGS = 10 V ID = 200 mA 10.000 Source-Drain Diode Forward Voltage I S - Source Current (A) 1.000 TJ = 150_C 0.100 TJ = 25_C 0.010 0.50 Threshold Voltage Variance Over Temperature 0.25 VGS(th) Variance (V) 0.00 ID = 250 mA -0.25 -0.50 -50 -25 0 25 50 75 100 125 150 Temperature (_C) 4 Siliconix S-52426--Rev. F, 14-Apr-97 |
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