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| (R) STS8NFS30L TM STripFET N - CHANNEL 30V - 0.018 - 8A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30 V SCHOTTKY IF(AV) 3A R DS(on) <0.022 V RRM 30 V ID 8A V F(MAX) 0.51 V SO-8 DESCRIPTION: This product associates the latest low voltage StripFETTM in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM (*) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C o Value 30 30 20 8 5 32 2.5 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol V RRM I F(RMS) I F(AV) I FSM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L =125 C =0.5 tp= 10 ms Sinusoidal tp=100 s o Value 30 20 3 75 1 10000 Unit V A A A A V/s (*) Pulse width limited by safe operating area December 1999 1/8 STS8NFS30L THERMAL DATA R thj-amb R thj-amb T stg Tj (*) Thermal Resistance Junction-ambient MOSFET (*) Thermal Resistance Junction-ambientSCHOTTKY Storage Temperature Range Maximum Junction Temperature (*) mounted on FR-4 board (steady state) 50 100 -65 to 150 150 o o C/W C/W o C o C MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V T c = 125 o C ON () Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10V V GS = 4.5V Test Conditions I D = 250 A ID = 4 A ID = 4 A 8 Min. 1 Typ. 1.6 0.018 0.021 Max. 2.5 0.022 0.026 Unit V A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D =4 A V GS = 0 Min. Typ. 10 1050 250 85 Max. Unit S pF pF pF 2/8 STS8NFS30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 15 V ID = 4 A R G = 4.7 V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 8 A VGS = 4.5 V Min. Typ. 22 60 17.5 4 7 23 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol t d(of f) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 15 V ID = 4 A R G = 4.7 V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 8 A R G = 4.7 V GS = 4.5 V (Inductive Load, see fig. 5) Min. Typ. 42 10 11 12 25 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A V GS = 0 50 40 1.6 I SD = 8 A di/dt = 100 A/s V DD = 20 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 8 32 2 Unit A A V ns nC () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol IR () V F () Parameter Reversed Leakage Current Forward Voltage drop Test Conditions T J= 25 o C T J= 125 o C T J= 25 o C T J= 125 o C V R =30V V R =30V I F =3A I F =3A Min. Typ. 0.03 0.38 Max. 0.2 100 0.51 0.46 Unit mA mA V V 3/8 STS8NFS30L Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/8 STS8NFS30L Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS8NFS30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS8NFS30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS8NFS30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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