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| (R) STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n A1 K A2 2 x 40 A 15 V 125 C 0.33 V n n n n Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V AND 12V OR-ing EXTREMELY LOW VOLTAGE VOLTAGE DROP: 0.33V @ 100C OPERATING JUNCTION TEMPERATURE: 125C AVALANCHE CAPABILITY SPECIFIED A2 K A1 Max247 DESCRIPTION The STPS80L15CY uses proprietary barrier technology to optimize forward voltage drop for OR-ing functions in n-1 fault tolerant Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 110C = 0.5 Per diode Per device Value 15 50 40 80 400 2 36045 - 65 to + 150 125 10000 Unit V A A A A W C C V/s tp = 10 ms sinusoidal tp = 2 s F = 1kHz square tp = 1s Tj = 25C July 2003 - Ed: 5B 1/5 STPS80L15CY THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Per diode Total Rth (c) Coupling Value 0.7 0.5 0.3 Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 100C Tj = 25C Tj = 100C Tj = 25C Tj = 100C VF * Forward voltage drop Tj = 25C Tj = 100C Tj = 25C Tj = 100C Pulse test :* tp = 380 s, < 2% Min. Typ. Max. 4 Unit mA VR = 5V 280 VR = 12V 0.44 VR = 15V 0.53 IF = 40 A IF = 40 A IF = 80 A IF = 80 A 0.40 0.30 400 11 1.1 16 1.3 0.42 0.33 0.55 0.46 A mA A V To evaluate the maximum conduction losses use the following equation : P = 0.20 x IF(AV) + 0.0032 x IF2(RMS) 2/5 STPS80L15CY Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) = 0.1 = 0.05 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) Rth(j-a)=Rth(j-c) 22 20 18 16 14 12 10 8 6 4 2 0 =1 T IF(av) (A) 0 5 =tp/T tp 10 15 20 25 30 35 40 45 50 55 60 50 45 40 35 30 25 20 15 10 5 0 Rth(j-a)=5C/W T =tp/T tp Tamb(C) 50 75 100 125 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) Fig. 6: Relative variation of thermal impedance junction to case versus pulse (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25C Tc=50C 600 500 400 300 200 100 0.6 0.4 =0.5 =0.2 =0.1 T Single pulse IM t Tc=75C 0.2 0.0 1E-3 tp(s) 1E-2 1E-1 =tp/T tp =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 1E+0 3/5 STPS80L15CY Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). 10 C(nF) F=1MHz Tj=25C 1E+3 1E+2 1E+1 Tj=100C Tj=75C 5 Tj=25C 2 1E+0 VR(V) VR(V) 1 1 2 5 10 20 1E-1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Fig. 9: Forward voltage drop versus forward current (per diode). IFM(A) Tj=100C (typical values) Tj=100C (Maximum values) 200 100 10 Tj=25C (Maximum values) VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 4/5 STPS80L15CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E A Millimeters Min. Max. 5.30 2.60 1.40 2.40 3.40 0.80 10.30 5.55 15.90 15.20 4.30 Inches Min. 0.185 0.087 0.038 0.079 0.118 0.016 0.776 0.211 0.602 0.559 0.146 Max. 0.209 0.102 0.055 0.094 0.133 0.031 0.799 0.219 0.626 0.598 0.169 A A1 b D 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 b1 b2 c L1 A1 L b1 b2 e b c D e E L L1 Ordering type Marking Package Max247 Weight 4.4g Base qty 30 Delivery mode Tube STPS80L15CY STPS80L15CY n n Cooling method: by conduction (C) Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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