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| (R) TYN612T/812T SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN612T and TYN812T Family of SCR uses a high performance glass passivated technology. This general purpose Family of SCR is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2 t dI/dt Tstg Tj Tl Parameter RMS on-state current (180 conductionangle) Average on-state current (180 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 1 A/s. IG = 100 mA Storage junction temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s Tc= 110C Tc= 110C tp = 8.3ms tp = 10ms tp = 10ms Value 12 8 125 120 72 100 - 40 to + 150 - 40 to + 125 260 Unit A A A A2s A/s C C K A G A K G A TO-220AB (Plastic) Symbol Parameter 612T TYN 812T 800 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125C 600 V November 1998 - Ed: 2 1/5 TYN612T/812T THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 1.3 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Type MIN MAX VGT VGD IL IH VTM IDRM IRRM dV/dt VD=12V (DC) RL=33 VD=VDRM RL=3.3k IG = 1.2 IGT IT= 100mA gate open Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C MAX MIN MAX MAX MAX MAX MAX MIN Value 0.5 5 1.3 0.2 30 15 1.6 5 1 40 V V mA mA V A mA V/s Unit mA IFGM = 4 A (tp = 20 s) VRGM = 5 V ITM= 24A tp= 380s VD= VDRM VR= VRRM VD=67%VDRM gate open ORDERING INFORMATION TYN SCR VOLTAGE 6 12 CURRENT T SENSITIVITY: 5mA 2/5 TYN612T/812T Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlation between maximum average power dissipationand maximum allowabletemperatures (Tamb and Tcase) for different thermal resistances haetsink + contact. P(W) = 30 = 90 = 120 = 180 = 60 P(W) 14 12 10 8 6 4 2 0 0 2 4 IT(av)(A) 6 8 360 Tcase (C) Rth=6C/W Rth=4C/W Rth=2C/W Rth=0C/W 14 D.C. 12 10 8 6 4 2 0 0 110 115 120 =180 Tamb(C) 25 50 75 100 125 12 10 12 5 Fig. 3: Average and DC on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. IT(av)(A) 14 12 10 8 6 4 2 Tcase(C) 0 0 25 50 75 100 125 =180 DC K=[Zth/Rth] 1.00 Zth(j-c) 0.10 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH [Tj] / IGT [Tj=25C] ,IH 2.5 2.0 1.5 IH IGT ITSM(A) 140 120 100 80 60 40 Tj initial=25 C F=50Hz 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 20 0 1 Number of cycles 10 100 1000 3/5 TYN612T/812T Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-statecharacteristics (maximum values). ITSM(A),I t(A s) 500 ITSM Tj initial=25C ITM(A) 200.0 100.0 Tj=125C 100 It 10.0 1.0 tp(ms) 10 1 2 5 10 Tj=25C Tj max.: Vto=0.75V Rd=36m VTM(V) 0.1 0 1 2 3 4 5 4/5 TYN612T/812T PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B REF. C b2 Millimeters Inches Min. Typ. Max. Min. Typ. Max. 15.20 3.50 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 16.40 2.65 1.14 1.14 2.60 2.95 0.104 1.70 0.044 1.70 0.044 0.102 15.90 0.598 4.20 0.137 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 0.646 0.116 0.066 0.066 0.625 0.165 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 A L F I A a1 a2 B b1 b2 C c1 l4 a1 c2 c2 e F l3 l2 a2 I I4 L b1 e M c1 l2 l3 M Marking Type number Package TO-220AB Weight 2.3 g. Base qty 250 units Delivery mode Plastic bag Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5 |
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