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| (R) STS2DNE60 N - CHANNEL 60V - 0.180 - 2A SO-8 STripFETTM POWER MOSFET PRELIMINARY DATA TYPE STS2DNE60 s s V DSS 60 V R DS(on) < 0.23 ID 2A s TYPICAL RDS(on) = 0.18 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs s SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Single Operation Drain Current (continuous) at T c = 100 o C Single Operation Drain Current (pulsed) Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Sinlge Operation o o Value 60 60 20 2 1.3 8 2 1.6 Unit V V V A A A W W IDM (*) P tot (*) Pulse width limited by safe operating area May 1999 1/5 STS2DNE60 THERMAL DATA R thj-amb Tj Tstg Single Operation Dual Operation Maximum Operating Junction Temperature Storage Temperature *Thermal Resistance Junction-ambient 78 62.5 150 -55 to 150 o o C/W C/W o C o C (*) Mounted on FR-4 board (t 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V T c = 125 o C ON () Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10 V Test Conditions I D = 250 A ID = 1 A Min. 2 Typ. 3.3 0.180 Max. 4 0.23 Unit V I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 8 A DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 1 A V GS = 0 V Min. Typ. 1.8 310 45 12 Max. Unit S pF pF pF 2/5 STS2DNE60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 30 V ID = 1 A V GS = 10 V R G = 4.7 (Resistive Load, see fig. 3) V DD = 24 V I D = 2 A V GS = 4.5 V Min. Typ. 9 10 12 5.1 2.7 16 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol t d(of f) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 30 V ID = 1 A V GS = 10 V R G = 4.7 (Resistive Load, see fig. 3) V clamp = 48 V ID = 2 A V GS = 10 V R G = 4.7 (Inductive Load, see fig. 5) Min. Typ. 25 5 4.5 5 12 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2 A V GS = 0 40 50 2.5 I SD = 2 A di/dt = 100 A/s V DD = 25 V T j = 150 o C (see test circuit, fig. 5) Test Conditions Min. Typ. Max. 2 8 1.2 Unit A A V ns nC A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STS2DNE60 SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 4/5 STS2DNE60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5 |
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