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| (R) STB16NB25 N - CHANNEL 250V - 0.220 - 16A - TO-263 PowerMESHTM MOSFET TYPE ST B16NB25 s s s s s s V DSS 250 V R DS(on) < 0.28 ID 16 A s TYPICAL RDS(on) = 0.220 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED EXTREMELY HIGH dv/dt CAPABILITY FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM (*) P tot dv/dt(1) T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature o o D2PAK TO-263 (suffix "T4") INTERNAL SCHEMATIC DIAGRAM Value 250 250 30 16 10 64 140 1.12 5.5 -65 to 150 150 ( 1) ISD 16A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V A A A W W /o C V/ns o o C C (*) Pulse width limited by safe operating area March 1999 1/8 STB16NB25 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 0.9 62.5 0.5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 16 250 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 250 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 30 V T c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Con ditions ID = 250 A ID = 8 A 16 Min. 3 Typ. 4 0.22 Max. 5 0.28 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =8 A V GS = 0 Min. Typ. 4 1000 250 40 Max. Unit S pF pF pF 2/8 STB16NB25 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 125 V ID = 8 A R G = 4.7 V GS = 10 V (Resistive Load, see fig. 3) V DD = 200 V I D = 16 A V GS = 10 V Min. Typ. 12 12 29 9 11 38 Max. Unit ns ns nC nC nC SWITCHING OFF Symbo l t d(of f) tf tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 125 V ID = 8 A V GS = 10 V R G = 4.7 (Resistive Load, see fig. 3) V CLAMP = 200 V I D = 16 A V GS = 10 V R G = 4.7 (Induct ive Load, see fig. 5) Min. Typ. 35 8 10 9 20 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A V GS = 0 210 1.5 14 I SD = 16 A di/dt = 100 A/s T j = 150 o C V DD = 50 V (see test circuit, fig. 5) Test Con ditions Min. Typ. Max. 16 64 1.5 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STB16NB25 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB16NB25 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB16NB25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB16NB25 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A C A2 DETAIL "A" A1 B2 B G C2 DETAIL"A" E L2 L L3 P011P6/E 7/8 STB16NB25 Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysi - Malta - Mexico - Morocco - The Netherlands a Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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