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 (R)
BU407FP
SILICON NPN TRANSISTOR
s
s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR
s
APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The device is a silicon epitaxial planar NPN transistor in TO-220FP fully isolated package. It is a fast switching, high voltage device for use in horizontal deflection output stages of medium and small screens MTV receivers with 110o CRT as monochrome computer terminals.
3 1 2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEV V CEO V EBO IC I CM I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Collector Peak Current (t p = 10 ms) Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 330 330 150 6 7 10 15 4 34 -65 to 150 150 Unit V V V V A A A A W o C o C 1/4
January 1999
BU407FP
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.67 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition-Frequency RESISTIVE LOAD Turn-off Time Second Breakdown Collector Current Test Conditions V CE =330 V V CE =200 V V CE =200 V V EB = 6 V IC = 5 A IC = 5 A I C = 0.5 A I B = 0.5 A I B = 0.5 A V CE = 10 V 10 Min. Typ. Max. 5 100 1 1 1 1.2 Unit mA A mA mA V V MHz
T case = 100 o C
I EBO V CE(sat) V BE(sat) fT
t off I s/b
IC = 5 A V CE = 40 V
I Bend = 0.5 A t = 10 ms 4
0.75
s A
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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BU407FP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7
F1
D
H
F
G1
E F2
123 L2 L4
G
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BU407FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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