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BU406D BU407D
SILICON NPN SWITCHING TRANSISTORS
s s s
SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED
s
APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV
1 2
3
TO-220 DESCRIPTION The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for use in horizontal deflection output stages of MTV receivers with 110o CRT. The BU406D is primarily intended for large screen, while the BU407D is for medium and small screens
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEV V EBO IC I CM I CM IB P tot T stg Tj June 1997 Parameter BU406D Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = - 1.5V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Collector Peak Current (t p = 10ms) Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 400 400 6 7 10 15 4 60 -65 to 150 150 Value BU407D 330 330 V V V A A A A W
o o
Unit
C C 1/4
BU406D/BU407D
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEV Parameter Collector Cut-off Current (V BE = - 1.5V) Test Conditions for BU406D V CE =400 V for BU407D V CE =330 V V EB = 6 V IC = 5 A IC = 5 A I C = 0.5 A IC = 5 A V CE = 40 V IF = 5 A IB = 0.65 A I B = 0.65 A V CE = 10V I Bend = 0.65 A t = 10 ms 4 1.5 10 0.75 Min. Typ. Max. 15 15 400 1 1.3 Unit mA mA mA V V MHz s A A
I EBO V CE(sat) V BE(sat) fT t off I s/b VF
Emitter Cut-off Current (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition-Frequency Turn-off Time Second Breakdown Collector Current Diode Forward Voltage
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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BU406D/BU407D
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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BU406D/BU407D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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