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HCF4030B
QUAD EXCLUSIVE-OR GATE
s
s
s
s s
s s
MEDIUM SPEED OPERATION - tPHL = tPLH = 65ns (TYP.) at CL = 50pF and VDD-VSS = 10V LOW OUTPUT IMPEDANCE : 500 (TYP.) at VDD-VSS = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"
DIP
SOP
ORDER CODES
PACKAGE DIP SOP TUBE HCF4030BEY HCF4030BM1 T&R HCF4030M013TR
DESCRIPTION HCF4030B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF4030B types consist of four indipendent exclusive-OR gates integrated on a single monolithic silicon chip. Each exclusive-OR gate consists of four n-channel and four p-channel enhancement-type transistors. All inputs and outputs are protected against electrostatic effects.
PIN CONNECTION
September 2002
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HCF4030B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
2, 1, 5, 6, 8, A, B, C, D, E, Data Inputs 9, 12, 13 F, G, H 3, 4, 10, 11 J, K, L, M Data Outputs VSS Negative Supply Voltage 7 14 VDD Positive Supply Voltage
TRUTH TABLE
IN1 L L H H IN2 L H L H OUT L H H L
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDD VI II PD Top Tstg Supply Voltage DC Input Voltage DC Input Current Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature Storage Temperature Parameter Value -0.5 to +22 -0.5 to VDD + 0.5 10 200 100 -55 to +125 -65 to +150 Unit V V mA mW mW C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage.
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HCF4030B
RECOMMENDED OPERATING CONDITIONS
Symbol VDD VI Top Supply Voltage Input Voltage Operating Temperature Parameter Value 3 to 20 0 to VDD -55 to 125 Unit V V C
DC SPECIFICATIONS
Test Condition Symbol Parameter VI (V) VO (V) |IO| VDD (A) (V) 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 18 TA = 25C Min. Typ. 0.02 0.02 0.02 0.04 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 -3.2 -1 -2.6 -6.8 1 2.6 6.8 10-5 5 -1.15 -0.36 -0.9 -2.4 0.36 0.9 2.4 3.5 7 11 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 Max. 4 8 16 20 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 Value -40 to 85C Min. Max. 4 8 16 20 4.95 9.95 14.95 0.05 0.05 0.05 -55 to 125C Min. Max. 30 60 120 600 Unit
IL
VOH
VOL
VIH
0/5 0/10 0/15 0/20 Output High 0/5 Voltage 0/10 0/15 Output Low Voltage 5/0 10/0 15/0 Input High Voltage
Quiescent Current
A
VIL
Input Low Voltage
IOH
Output Drive Current
IOL
Output Sink Current Input Leakage Current Input Capacitance
0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18
0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5
<1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1
V
V
V
V
mA
mA
II
Any Input Any Input
0.1
7.5
1
1
A
pF
CI
The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25C, CL = 50pF, RL = 200K, tr = tf = 20 ns)
Test Condition Symbol Parameter VDD (V) 5 10 15 5 10 15 Min. Value (*) Typ. 140 65 50 100 50 40 Max. 280 130 100 200 100 80 ns Unit
tPLH tPHL Propagation Delay Time
tTLH tTHL Output Transition Time
ns
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TYPICAL APPLICATION : EVEN PARITY-BIT GENERATOR
TYPICAL APPLICATION : EVEN PARITY-CHECKER
TYPICAL APPLICATION : ODD-PARITY-BIT GENERATOR
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HCF4030B
TYPICAL APPLICATION : ODD-PARITY-CHECKER
TYPICAL APPLICATION : 8-BIT COMPARATOR
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TYPICAL APPLICATION : 8-BIT TWO'S COMPLEMENT ADDER-SUBSTRACTOR
(*) Typical temperature coefficient for all VDD value is 0.3 %/C.
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200K RT = ZOUT of pulse generator (typically 50)
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WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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Plastic DIP-14 MECHANICAL DATA
mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 TYP. MAX. inch
P001A
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SO-14 MECHANICAL DATA
DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010
PO13G
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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