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(R) T410/T435-B HIGH PERFORMANCE TRIACS FEATURES ITRMS = 4 A VDRM = 400 V to 600 V IGT 10mA and 35mA HIGH SNUBBERLESS TECHNOLOGY HIGH NOISE IMMUNITY A2 DESCRIPTION The T410/T435-B series of triac are using a high performance PNPN technology.These devices are intended for AC control applications using surface mount technology. The high communation performances combined with high sensitivity make then perfect in all applications like solid state relays, home appliances, power tools, small motor drives etc... A2 A1 DPAK (Plastic) G ABSOLUT MAXIMUM RATINGS Symbol IT(RMS) ITSM I2t dI/dt Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value for fusing Critical rate of rise of on-state current IG = 500mA diG/dt = 0.1A/s Tc = 110 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s Value 4 35 30 4.5 10 50 - 40 to + 150 - 40 to + 125 260 C C C A2s A/s Unit A A Symbol Parameter 400B T410 or T435 600B 600 700B 700 800B 800 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 400 V March 1999 Ed: 2A 1/5 T410 / T435-B THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Junction to case for DC Junction to case for AC 360 conduction angle ( F= 50 Hz) Parameter Value 3.5 2.6 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1 W PGM= 10 W (tp = 20 s) IGM = 4 A (tp = 20 s) VGM = 16 V (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T410 IGT VGT VGD tgt VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s ITM = 5.5A IG=1.2 IGT IT= 100mA gate open ITM= 5.5A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open Tj=25C Tj=25C Tj=125C Tj=25C I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP 10 1.5 0.2 2 Value T435 35 mA V V s Unit IL IH * VTM * IDRM IRRM dV/dt * Tj=25C Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C Tj=125C I-II-III MAX MAX MAX MAX MAX MIN MIN 30 15 1.75 10 2 30 2.7 1.8 60 35 mA mA V A mA 250 4.4 2.7 V/s A/ms (dI/dt)c * (dV/dt)c = 0.1V/s (dV/dt)c = 20V/s * For either polarity of electrode A2 voltage with reference enceenceto electrode A1. 2/5 T410 / T435-B Fig. 1: Maximum power dissipation versus rms onstate current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. 6.0 5.0 P(W) 6.0 = 180 P(W) Rth=5C/W Rth=10C/W Tcase (C) Rth=0C/W 5.0 = 120 110 Rth=15C/W 4.0 3.0 2.0 = 30 = 60 4.0 115 = 90 3.0 2.0 180 120 = 180 1.0 1.0 0.0 0 Tamb(C) 25 50 75 100 125 IT(RMS)(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 125 Fig. 3: RMS on-state current versus ambient temperature. IT(RMS)(A) Rth(j-a)=Rth(j-c) Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. K=[Zth(j-c)/Rth(j-c)] 1.00 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.50 Rth(j-a)=55C/W S(Cu)=1.75cm 0.20 tp(s) = 180 Tamb(C) 25 50 75 100 125 0.10 1E-3 1E-2 0 1E-1 1E+0 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). IGT,IH[Tj] / IGT,IH[Tj=25C] 2.5 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 30 25 Tj initial=25C F=50Hz 2.0 IGT 1.5 IH 20 15 10 1.0 0.5 0.0 -40 Tj(C) -20 0 20 40 60 80 100 120 140 5 Number of cycles 0 1 10 100 1000 3/5 T410 / T435-B Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A),It(As) 100 ITSM Fig. 8: On-state characteristics (maximum values). 30.0 Tj initial=25C ITM(A) 10.0 Tj=Tj max. Tj max.: Vto=0.95V Rd=140 m 10 It 1.0 Tj=25C tp(ms) 1 1 2 5 10 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 100 80 60 40 20 S(Cu) (cm) 0 0 2 4 6 8 10 12 14 16 18 20 ORDERING INFORMATION T 4 10 - 600 B TRIAC PACKAGES B = DPAK CURRENT VDRM / VRRM SENSITIVITY 4/5 T410 / T435-B PACKAGE MECHANICAL DATA DPAK Plastic DIMENSIONS REF. Millimeters Min. Typ. Max Min. Inches Typ. Max. A A1 A2 B B2 C C2 D E G H L2 L4 V2 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0 2.40 0.086 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.017 0.60 0.018 6.20 0.236 6.60 0.251 4.60 0.173 10.10 0.368 0.031 1.00 0.023 8 0 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8 FOOT PRINT DIMENSIONS (in millimeters) 6.7 MARKING TYPE T410-x00B MARKING T4 10x0 T4 35x0 6.7 T435-x00B 6.7 3 1.6 2.3 2.3 1.6 WEIGHT : 0.30g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5 |
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