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 (R)
T405-B
HIGH PERFORMANCE TRIACS
FEATURES ITRMS = 4 A VDRM = 400 V to 600 V SENSITIVE GATE : IGT 5 mA LOGIC LEVEL HIGH NOISE IMMUNITY
A2
DESCRIPTION The T405-B triac is using a high performance TOPGLASS PNPN technology.This device is intended for AC control applications using surface mount technology. The high communation performances combined with high sensitivity make this triac perfect for direct drive from microprocessors in all applications like appliances, power tools, small motor drives etc...
A2 A1
DPAK (Plastic)
G
ABSOLUT MAXIMUM RATINGS Symbol IT(RMS) ITSM I2t dI/dt Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value for fusing Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/s Tc = 95 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s Value 4 35 30 4.5 10 50 - 40 to + 150 - 40 to + 110 260 C C C A2s A/s Unit A A
Symbol
Parameter 400B
T405600B 600
Unit
VDRM VRRM
Repetitive peak off-state voltage Tj = 110 C
400
V
March 1999 Ed: 2A
1/5
T405-B
THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Junction to case for DC Junction to case for AC 360 conduction angle ( F= 50 Hz) Parameter Value 3.5 2.6 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG(AV) = 1 W PGM= 10 W (tp = 20 s) IGM = 4 A (tp = 20 s) VGM = 16 V (tp = 20 s).
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH * VTM * IDRM IRRM dV/dt * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 40mA ITM = 5.5A dIG/dt = 0.5A/s IG=1.2 IGT IT= 100mA gate open ITM= 5.5A tp= 380s VDRM Rated VRRM Rated Tj=25C Tj=25C Tj=110C Tj=25C Tj=25C Tj=25C Tj=25C Tj=25C Tj=110C Quadrant I-II-III I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MAX MIN TYP MIN Value 5 1.5 0.2 2 15 10 1.75 10 2 5 20 1.8 A/ms Unit mA V V s mA mA V A mA V/s
Linear slope up to VD=67%VDRM Tj=110C gate open Tj=110C
(dI/dt)c * (dV/dt)c = 0.1V/s
* For either polarity of electrode A2 voltage with reference enceenceto electrode A1.
2/5
T405-B
Fig. 1: Maximum power dissipation versus rms onstate current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact.
Tcase (C)
Rth=10C/W Rth=15C/W Rth=5C/W Rth=0C/W
6.0 5.0
P(W)
= 180 = 120
6.0 5.0 4.0 3.0 2.0
180
P(W)
95
4.0 3.0 2.0 1.0
= 30 = 60 = 90
100
105
= 180
1.0 0.0 0
Tamb(C) 20 30 40 50 60 70 80 90 100 110
110
0.0 0.0
IT(RMS)(A) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10
Fig. 3: RMS on-state current versus ambient temperature.
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 IT(RMS)(A)
Rth(j-a)=Rth(j-c)
Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration.
K=[Zth(j-c)/Rth(j-c)] 1.00
0.50
Rth(j-a)=55C/W S(Cu)=1.75cm
0.20
= 180
Tamb(C) 0 10 20 30 40 50 60 70 80 90 100 110
0.10 1E-3 1E-2
tp(s) 1E-1 1E+0
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values).
IGT,IH[Tj] / IGT,IH[Tj=25C] 2.5 2.0 1.5
IH
Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
ITSM(A) 30 25
Tj initial=25C F=50Hz
IGT
20 15 10 5
1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120
Number of cycles 0 1 10 100 1000
3/5
T405-B
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
ITSM(A),It(As) 100
ITSM
Fig. 8: On-state characteristics (maximum values).
30.0
Tj initial=25C
ITM(A)
10.0
Tj=Tj max.
Tj max.: Vto=0.95V Rd=140 m
10
It
1.0
Tj=25C
tp(ms) 1 1 2 5 10
VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W) 100 80 60 40 20 S(Cu) (cm) 0 0 2 4 6 8 10 12 14 16 18 20
ORDERING INFORMATION
T 4 05 - 600 B
TRIAC PACKAGES B = DPAK
CURRENT SENSITIVITY VDRM / VRRM 400V / 600V
4/5
T405-B
PACKAGE MECHANICAL DATA DPAK Plastic
DIMENSIONS REF. Millimeters Min. Typ. Max Min. Inches Typ. Max.
A A1 A2 B B2 C C2 D E G H L2 L4 V2
2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0
2.40 0.086 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.017 0.60 0.018 6.20 0.236 6.60 0.251 4.60 0.173 10.10 0.368 0.031 1.00 0.023 8 0
0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8
FOOT PRINT DIMENSIONS (in millimeters)
6.7
MARKING TYPE T405-400B MARKING T4 0540 T4 0560
6.7
T405-600B
6.7 3 1.6 2.3 2.3 1.6
WEIGHT : 0.30g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5


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