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| BCX19 SMALL SIGNAL NPN TRANSISTOR Type BCX19 s Marking U1 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS IS BCX17 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM I EM P t ot T stg Tj March 1996 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 50 45 5 0.5 1 0.1 0.2 -1 350 -65 to 150 150 Unit V V V A A A A A mW o o C C 1/4 BCX19 THERMAL DATA R t hj-amb * R th j-SR * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 350 290 o o C/W C/W * Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 20 V V CB = 20 V I C = 10 A T j = 150 o C 50 Min. Typ . Max. 100 5 Un it nA A V V (BR)CES Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain I C = 10 mA 45 V I E = 10 A 5 V V CE(sat ) V BE(on) hFE I C = 500 mA I C = 500 mA I C = 100 mA I C = 300 mA I C = 500 mA I C = 10 mA I E = 0 mA I B = 50 mA V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 5 V f = 100 MHz f = 1MHz 100 70 40 200 6 0.62 1.2 V V fT C CB Transition F requency Collector Base Capacitance MHz pF V CB = 10 V Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 BCX19 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BCX19 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4 |
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