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| BUW50 SILICON NPN SWITCHING TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION TURN-ON AND TURN-OFF TAIL SPECIFICATIONS TURN-ON dic/dt FOR BETTER RECTIFIER CHOICE SWITCHING TIMES SPECIFIED WITH AND WITHOUT NEGATIVE BASE DRIVE FAST SWITCHING TIMES LOW SWITCHING LOSSES LOW ON-STATE VOLTAGE DROP BASE CURRENT REQUIREMENTS s s s 3 2 1 s s s s s TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Power Dissipation (B.E. junction in avalance) Total Power Dissipation at T case 25 o C Storage Temperature Max Operating Junction Temperature Value 250 125 7 25 50 6 12 2 150 -65 to 175 175 Unit V V V A A A A W W o o C C October 1995 1/5 BUW50 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 10) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC = = = = 10A 20A 10A 20A IB IB IB IB = = = = 0.5A 2A 0.5A 2A 125 7 0.4 0.6 0.5 0.75 1.25 1.25 50 45 100 85 1.4 2.1 1.1 1.5 3 4 2 2.5 0.8 0.9 0.9 1.5 1.6 1.7 T c = 100o C V BE = -1.5V V BE = - 1.5V T C =100 o C Min. Typ. Max. 1 5 1 5 1 Unit mA mA mA mA mA V V V V V V V V A/s A/s V V V V VCEO(sus) Collector-Emitter Sustaining Voltage V EB0 V CE(sat) Emitter-base Voltage (I c = 0) Collector-Emitter Saturation Voltage T j = 100 o C T j = 100 o C T j = 100 C I B1 =3A T j = 25o C T j = 100 o C I B1 =2A T j = 25o C T j = 100 o C I B1 = 2A T j = 25o C T j = 100 o C o V BE(sat) di c /dt Base-Emitter Saturation Voltage Rate of Rise of on-state Collector Current Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage I C = 20A I C = 20A V CC = 160V IB = 2A IB = 2A RC = 0 V CE(2s) V CC = 100V R C = 5 V CE(4s) V CC = 100V R C = 5 Pulsed: Pulse duration = 300 s, duty cycle = 2 % 2/5 BUW50 ELECTRICAL CHARACTERISTICS (continued) Symbol tr ts tf ts tf tt tc ts tf tt tc ts tf tt ts tf tt Parameter RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Storage Time Fall Time Tail Time in Turn-on Test Conditions V CC = 100V V BB = -5V R B = 0.83 V CC = 100V I C = 20A V BB = -5V L C = 0.25mH VCC = 100V I C = 20A V BB = -5V L C = 0.25mH V CC = 100V I C = 20A V BB = 0 L C = 0.25mH V CC = 100V I C = 20A V BB = 0 L C = 0.25mH I C = 24A I B1 = 3A T p = 30s V clamp = 125V I B = 2A R B = 1.3 V clamp = 125V I B = 2A R B = 1.3 o T j =100 C V clamp = 125V I B = 2A R B = 4.7 V clamp = 125V I B = 2A R B = 4.7 T j =100 o C Min. Typ. 0.33 0.75 0.15 0.85 0.09 0.04 0.16 1.2 0.17 0.07 0.3 2.1 0.7 0.28 3.2 1.2 0.55 Max. 0.6 1.2 0.3 1.4 0.2 0.05 0.3 1.7 0.3 0.1 0.5 Unit s s s s s s s s s s s s s s s s s Pulsed: Pulse duration = 300 s, duty cycle = 2 % 3/5 BUW50 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 123 P025A 4/5 G BUW50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5 |
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