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| (R) Z01xxxN SENSITIVE GATE TRIACS FEATURES IT(RMS) = 1A VDRM = 400V to 800V IGT 3mA to 25mA A1 A2 G A2 DESCRIPTION The Z01xxxN series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Ttab= 90 C tp = 8.3 ms tp = 10 ms I2 t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Value 1 8.5 8 0.35 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s Unit A A SOT223 (Plastic) Symbol VDRM VRRM Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V May 1998 Ed: 1A 1/6 Z01xxxN THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-t) Rth(j-t) Junction to ambient Junction to leads for D.C Junction to leads for A.C 360conduction angle (F=50Hz) Parameter Value 60 30 25 Unit C/W C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=140 Tj= 25C Quadrant 03 I-II-III IV VGT VGD tgt VD=12V (DC) RL=140 VD=VDRM RL=3.3k VD=VDRM IG = 40mA IT = 1.4A dIG/dt = 0.5A/s IT= 50 mA Gate open IG= 1.2 IGT Tj= 25C I-II-III-IV MAX MAX MAX MIN TYP 3 5 Sensitivity 07 5 7 1.5 0.2 2 09 10 10 10 25 25 V V s mA Unit IGM = 1 A (tp = 20 s) Tj= 125C I-II-III-IV Tj= 25C I-II-III-IV IH * IL Tj= 25C Tj= 25C I-III-IV II MAX TYP TYP MAX MAX MAX MIN MIN TYP 7 7 14 10 10 20 1.8 10 10 10 20 25 25 50 mA mA VTM * IDRM IRRM dV/dt * (dV/dt)c * ITM= 1.4A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 0.44 A/ms Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C V A 200 10 20 50 2 1 1 100 5 V/s V/s * For either polarity of electrode A2 voltage with reference to electrodeA 1 ORDERING INFORMATION Z TRIAC TOP GLASS CURRENT 2/6 01 07 SENSITIVITY M N PACKAGE : N = SOT223 VOLTAGE Z01xxxN Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Ttab). P(W) 1.6 180 O P (W) Ttab (oC) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 = 180 = 120 = 90 = 60 = 30 o o o o o 1.4 1.2 1.0 0.8 0.6 0.4 Rth(j-a) oC/W -90 Rth(j-t) oC/W -95 -100 -105 -110 -115 I T(RMS) (A) 0.5 0.6 0.7 0.8 0.9 1.0 0.2 0.0 0 Tamb (oC) -120 60 80 100 120 -125 140 20 40 Fig.3 : RMS on-state current versus tab temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.00 1.2 1.0 0.8 = 180 o 0.6 0.4 0.2 0 0 o 0.10 Stan dar d foo t print , e(Cu) =35 m Ttab( C) 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1 E+0 1 E+1 tp( s) 1 E+2 5 E +2 Fig.5 : Relativevariation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Tj initial = 25oC 6 4 Ih 2 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/6 Z01xxxN Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) Fig.8 : On-statecharacteristics(maximum values). I TM (A) 10 Tj initial = 25 oC Tj initial o 25 C 100 I TSM 10 1 Tj max 1 I2t Tj max Vto =1.10V Rt =0.420 tp(ms) 0.1 1 10 0.1 VTM (V) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 4/6 Z01xxxN PACKAGE MECHANICAL DATA SOT223 (Plastic) DIMENSIONS REF. V1 Millimeters 1.50 0.02 2.95 0.65 0.25 6.30 2.3 4.6 3.30 6.70 0.63 0.85 1.10 0.65 3.70 7.30 0.67 1.05 1.30 0.130 0.264 1.70 0.10 3.15 0.85 0.35 6.70 0.059 0.001 0.090 0.026 0.010 0.248 Inches 0.067 0.004 0.124 0.033 0.014 0.264 0.091 0.181 0.146 0.287 0.026 0.041 0.051 Min. Typ. Max. Min. Typ. Max. A A1 A A1 B1 e1 D B t V A1 V2 O C B B1 C D e e1 E H HE O S t V e S 0.025 0.026 0.033 0.043 10 max 10 min 16max 10 min 16max V1 V2 Weight : 0.11 g FOOT PRINT 5/6 Z01xxxN MARKING Type Z0103DN Z0103MN Z0103SN Z0103NN Z0107DN Z0107MN Z0107SN Z0107NN Z0109DN Z0109MN Z0109SN Z0109NN Z0110DN Z0110MN Z0110SN Z0110NN Marking Z3D Z3M Z3S Z3N Z7D Z7M Z7S Z7N Z9D Z9M Z9S Z9N Z0D Z0M Z0S Z0N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 |
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