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MDS80
DIODE / THYRISTOR MODULE
FEATURES DRM = VRRM UP TO 1200 V
T(AV) = 55 A PRELIMINARY DATA
.V .I .HI .I
GH SURGE CAPABILITY NSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) (UL recognized : E81734)
G
A I
DESCRIPTION The MDS80 family are constitued of one rectifier diode and general purpose SCR. Suited for power supply up to 400 Hz on resistive or inductive load. The small volume (7cm3) and weight (29g) of the ISOTOP package are well adapted to new generation of medium size module market applications. PIN CONNECTIONS
K
Screw version ISOTOP TM (Plastic)
1 : Thyristor Gate (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode 4 : Diode Anode(A)
(I)
ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM I2t dI/dt Tstg Tj Symbol Parameter RMS on-state current. Single phase circuit. Average on-state current Single phase circuit, 180 conduction angle per device Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value for fusing Critical rate of rise of on-state current Gate supply : IG = 800mA - diG/dt = 1A/s Storage and junction temperature range Tc = 85C tp = 8.3ms tp = 10ms tp = 10ms Value 85 55 710 680 2300 100 - 40 + 150 - 40 + 125 A2s A/s C Unit A A A
Parameter -800
MDS80 -1000 1000 -1200 1200
Unit
VDRM VRRM April 1995
Repetitive peak off-state voltage Tj = 125 C
800
V
TM : ISOTOP is a trademark of SGS-THOMSON Microelectronics
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MDS80
THERMAL RESISTANCES
Symbol Rth (j-c) DC Junction to case for DC Rth (c-h) Contact (case to heatsink) (4) Parameter Value 0.45 0.05 Unit C/W C/W
(4) With contact grease utilisation
GATE CHARACTERISTICS (maximum values)
PGM = 50 W (tp = 20 s)
PG (AV)= 1 W ) IGM = 4 A (tp = 20 s)
VRGM = 5 V
ELECTRICAL CHARACTERISTICS (SCR)
Symbol IGT VGT VGD tgt IL VD=12V VD=12V (DC) (DC) Test Conditions RL=33 RL=33 Tj=25C Tj=25C Tj=125C Tj=25C Tj=25C MAX MAX MIN TYP TYP MAX IH VTM IDRM IRRM tq IT= 500mA gate open ITM= 170A tp= 380s VD = VDRM Tj=25C Tj=25C Tj=25C Tj=125C IT= 110A VR =75V VD=67%VDRM dI/dt=30A/s dV/dt=20V/s tp=100s Gate open VD=67%VDRM gate open Tj=125C MAX MAX MAX MAX TYP Value 150 1.5 0.2 2 60 120 80 1.75 0.05 10 100 s mA V mA Unit mA V V s mA
VD=VDRM R L=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s IG=1.2 IGT
dV/dt *
Tj=125C
MIN
500
V/s
* For higher guaranteed values, please consult us.
ELECTRICAL CHARACTERISTICS (DIODE)
Symbol VF IR IF=170A VR=VRRM Test Conditions Tj=25C Tj=25C Tj=125C Value 1.75 0.05 10 Unit V mA
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MDS80
PACKAGE MECHANICAL DATA ISOTOP plastic : SCREW VERSION
M G / OJ O
A
B
/ OI
/ OI D H E F
C K L P
screw H M4
REF.
A B C D E F G H I J K L M O P
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 1.95 2.05 0.077 0.081 0.75 0.85 0.029 0.034 12.60 12.80 0.496 0.504 25.10 25.50 0.988 1.004 31.50 31.70 1.240 1.248 4.00 0.157 4.10 4.30 0.161 0.169 4.10 4.30 0.161 0.169 14.90 15.10 0.586 0.595 30.10 30.30 1.185 1.193 37.80 38.20 1.488 1.504 7.80 8.20 0.307 0.323 5.50 0.216
Cooling method : C Marking : Type number Weight : 28 g. (without screws) Electrical isolation : 2500V(RMS) Capacitance : < 45 pF Inductance : < 5 nH
- Recommended torque value : 1.3 N.m (Max 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version). - The screws supplied with the package are adapted for mounting on a board (or others types of terminals) with a thickness of 0.6 mm min and 2.2 mm max.
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MDS80
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4

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