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(R)
TMMDB3 / TMMDB3TG
TRIGGER DIODES
FEATURES VBO : 32V VERSION LOW BREAKOVER CURRENT
DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination.
MINIMELF ( Glass )
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Power dissipation on printed circuit (L = 10 mm) Repetitive peak on-state current Value Unit
P ITRM
Ta = 65 C tp = 20 s F= 100 Hz
150 2
mW A C C
Tstg Tj
Storage and operating junction temperature range
- 40 to + 125 - 40 to + 125
THERMAL RESISTANCES
Symbol Parameter Junction to ambient Junction to tie-point Value Unit
Rth (j-a) Rth (j-l)
400 300
C/W C/W
August 1998 Ed: 1A
1/4
TMMDB3 / TMMDB3TG
ELECTRICAL CHARACTERISTICS (Tj = 25C)
Symbol Parameter Breakover voltage * Test Conditions TMMDB3 C = 22nF ** see diagram 1 Value TMMDB3TG Unit
VBO
MIN TYP MAX
28 32 36 3 5 5 100 1.5 10
30 32 34 2
V
[I+VBOI-I-VBOI] IV I VO IBO tr IB
Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time * Leakage current *
C = 22nF ** see diagram 1 I = [IBO to IF = 10 mA] see diagram 1 see diagram 2 C = 22nF ** see diagram 3 VB = 0.5 VBO max see diagram 1
MAX MIN MIN MAX TYP MAX
V V V
15
A s A
* Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices. DIAGRAM 1 : Current-voltage characteristics DIAGRAM 2 : Test circuit for output voltage
10 k
+ IF 10mA
500 k 0.1 F
D.U.T VO R = 20
220 V 50 Hz
-V
I BO IB 0,5 VBO V
+V
DIAGRAM 3 : Test circuit see diagram 2. Adjust R for Ip = 0.5A
lp 90 %
VBO
- IF
10 % tr
2/4
TMMDB3 / TMMDB3TG
Fig.1 : Power dissipation versus ambient temperature (maximum values)
P (mW)
Fig.2 : Relative variation of VBO versus junction temperature (typical values)
VBO[Tj] o VBO[Tj=25 C]
160 140 120 100 80 60 40 20 0
0
1.02 1.04 1.08
1.06
Tamb (o C)
o
Tj( C) 1.00 25 50 75 100 125
o
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.3 : Peak pulse current versus pulse duration (maximum values)
I TRM (A)
2 1
F = 100 Hz
Tj initial = 25 C
o
0.1
tp ( s)
0.01 10
100
1000
10000
3/4
TMMDB3 / TMMDB3TG
PACKAGE MECHANICAL DATA (in millimeters) MINIMELF Glass
A
/ OB
OD / C C
DIMENSIONS REF. A B C D Min. 3.30 1.59 0.40 Millimeters Typ. 3.40 1.60 0.45 1.50 Max. 3.6 1.62 0.50 Min. 0.130 0.063 0.016 Inches Typ. 0.134 0.063 0.018 0.059 Max. 0.142 0.064 0.020
FOOT PRINT (in millimeters) Marking : Clear Cooling method by convection and conduction Polarity : N A Stud torque : N A Weight : 0.0380 g
2
2.5 5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4

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