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MDS35
DIODE / THYRISTOR MODULE
.V .I .HI .I
FEATURES DRM = VRRM UP TO 1200 V
T(AV) = 25 A
GH SURGE CAPABILITY NSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS)
G
A I
DESCRIPTION The MDS35 family are constitued of one rectifier diode and general purpose SCR. Suited for power supplies up to 400 Hz on resistive or inductive load. The small volume (7cm3) and weight (29g) of the ISOTOP package are well adapted to new generation of medium size module market applications. PIN CONNECTIONS
K
Screw version ISOTOPTM (Plastic)
1 : Thyristor Gate (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode 4 : Diode Anode(A)
(I)
ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM IFSM I2t dI/dt Tstg Tj Symbol RMS on-state current Average on-state current Single phase circuit, 180 conduction angle per device Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value for fusing Critical rate of rise of on-state current Gate supply : IG = 800mA - diG/dt = 1A/s Storage temperature range Operating junction temperature range Parameter -800 VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 800 Tc = 85C tp = 8.3ms tp = 10ms tp = 10ms Parameter Value 50 25 420 400 800 100 - 40 + 150 - 40 + 125 MDS35 -1000 1000 -1200 1200 V A2s A/s C Unit A A A
Unit
TM: ISOTOP is a trademak of SGS-THOMSON Microelectronics
April 1995
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MDS35
THERMAL RESISTANCES
Symbol Rth (j-c) DC Junction to case for DC Rth (c-h) Contact (case to heatsink) (4) Parameter Value 1 0.05 Unit C/W C/W
(4) With contact grease utilisation
GATE CHARACTERISTICS (maximum values)
PGM = 50 W (tp = 20 s) PG (AV)= 1 W
IFGM = 4 A (tp = 20 s)
VRGM = 5V.
ELECTRICAL CHARACTERISTICS (SCR)
Symbol IGT VGT VGD tgt IL VD=12V VD=12V (DC) (DC) Test Conditions RL=33 RL =33 Tj=25C Tj=25C Tj=125C Tj=25C Tj=25C MAX MAX MIN TYP TYP MAX IH IT= 0.5A gate open Tj=25C TYP MAX VTM IDRM IRRM tq ITM= 80A tp= 380s VDRM VRRM Rated Rated Tj=25C Tj=25C Tj=125C Tj=125C MAX MAX MAX TYP Value 50 1.5 0.2 2 60 120 40 80 1.7 0.05 10 100 s V/s V mA mA Unit mA V V s mA
VD=VDRM R L=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s IG=1.2 IGT
IT= 80A VR=75V VD =67%VDRM dI/dt=30A/s dV/dt=20V/s Gate open Linear slope up to VD =67%VDRM gate open
dV/dt *
Tj=125C
MIN
500
* For higher guaranteed values, please consult us.
ELECTRICAL CHARACTERISTICS (DIODE)
Symbol VF IR IF=80A VR =VRRM Test Conditions Tj=25C Tj=125C Tj=25C Value 1.7 10 50 Unit V mA A
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MDS35
Fig. 1 : Maximun Average Power dissipation versus average on-state current. (Sinusoidal waveform : Thyristor or Diode) Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb) for different thermal resistances heatsink + contact. (Sinusoidal waveform : Thyristor or Diode)
P(av )(W)
=60
o
P(av)(W)
=90
o
=180 o
Rth(c-a )=0.75 oC/W Rth(c- a)=O.50o C/W Rth(c.a)= 0oC/W
=30
o
o
=180 =120
o
Rth(c- a)=1.00 oC/M Rth(c- a)=1.2 5oC/W
IT,IF(av) (A)
Tamb(o C)
Fig. 3 : Maximum average power dissipation versus average on-state current. (Rectangular waveform : Thyristor or Diode)
Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb) for different thermal resistances heatsink + contact. (Rectangular waveform : Thyristor or Diode)
P(av)(W)
=60 o =90 o =120 o =180
o
=30
o
DC
I T,IF(av)(A)
Fig.5 : Maximum total power dissipation versus output current on resistive or inductive load. (Single phase bridge rectifier : 2 packages MDS35)
Fig. 6 : Correlation between maximum total average power dissipation and maximum ambiant allowable temperature for different thermal resistances heatsink + contact. (Single phase bridge rectifier : 2 packages : MDS35)
Ptot .(W) 160
RESISTIVE LOAD
140 120
INDU CTIVE LOAD
Rth(c.a)=0o C/W Rth(c-a)=O.25 o C/W Rth(c-a)=0.5 o C/W Rth(c-a)=1.0 o C/W
=180
o
100 80 60 40 Rth(c-a)=O.75 o C/W
Ioutput(A)
20 0 0 10 30
Tamb(oC)
50
70
90
110
130
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MDS35
Fig. 7 : Maximun total power dissipation versus output current . (Three phase bridge rectifier : 3 packages : MDS35) Fig.8 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb) for different thermal resistances heatsink + contact . (Three phase bridge rectifier : 3 packages : MDS35)
Ptot.(W)
Rth(c.a)=0 OC/W
Ptot.(W) 300 250 200
=120
o
Rth(c-a)=O.25 OC/W
Rth(c-a)=0.5 OC/W
150 100 50 Ioutput(A) 0 0 10 20 30 40 50 60 70 80
Tamb(o C)
Rth(c-a)=1.0 OC/W Rth(c-a)=0.75 O C/W
Fig. 9 : Average on-state current versus temperature . (Sinusoidal waveform : Thyristor or Diode)
I T,IF(av)(A)
=18 0 o
case
Fig. 10 : Average on-state current versus case temperature . (Rectangular waveform : Thyristor or Diode)
I T,IF(av)(A)
D.C.
=120 o =90 o
=60 o
=18 0 o =120 o
=30 o
=90 o
=60o
=30 o
Tcase(oC)
Tcase( oc)
Fig. 11: Relative variation of thermal transient impedance junction to case versus pulse duration.
Fig.12 : Relative variation of gate trigger and holding current versus junction temperature.
Igt;Ih [Tj] / Igt;Ih [Tj=25 C]
o
Igt
Ih
tp( s)
Tj( o C)
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MDS35
Fig.13 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10 ms and 2 corresponding value of I t . (Thyristor or diode)
I TSM;IFSM(A);I2t(A2s)
Tj initial = 25 C It
2
Fig. 14 : Non repetitive surge peak on-state current versus number of cycles. (Thyristor or Diode)
I TSM;IFSM(A)
o
Tj initial = 25 C
o
ITSM;IFSM
tp(ms) 2 5
Number of cycles
Fig. 15 : On-state characteristics . (Maximum values)(Thyristor or Diode)
VTM,VFM(V)
Tj=125 oC:
Vto=0.85V
Rt=11m
o Tj initial = 25 C o Tj initial = 125 C
I TM,IFM(A)
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MDS35
PACKAGE MECHANICAL DATA ISOTOP plastic : SCREW VERSION
M G / OJ O
A
B
/ OI
/ OI D H E F
C K L P
screw H M4
REF.
A B C D E F G H I J K L M O P
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 1.95 2.05 0.077 0.081 0.75 0.85 0.029 0.034 12.60 12.80 0.496 0.504 25.10 25.50 0.988 1.004 31.50 31.70 1.240 1.248 4.00 0.157 4.10 4.30 0.161 0.169 4.10 4.30 0.161 0.169 14.90 15.10 0.586 0.595 30.10 30.30 1.185 1.193 37.80 38.20 1.488 1.504 7.80 8.20 0.307 0.323 5.50 0.216
Cooling method : C Marking : Type number Weight : 28 g. (without screws) Electrical isolation : 2500V(RMS) Capacitance : < 45 pF Inductance : < 5 nH
- Recommended torque value : 1.3 N.m (Max 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version). - The screws supplied with the package are adapted for mounting on a board (or others types of terminals) with a thickness of 0.6 mm min and 2.2 mm max.
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MDS35
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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