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| 2SK1971 Silicon N Channel MOS FET Application High speed power switching TO-3PL Features * * * * * Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control 2 1 1 3 2 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 500 30 35 140 35 200 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1971 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 500 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS =400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 18A VGS = 10 V * ID = 18A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 18A VGS = 10 V RL = 1.67 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.19 10 250 3.0 0.23 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 16 24 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 4320 1120 130 50 170 320 130 1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF =35 A, VGS = 0 IF = 35 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 530 -- ns -------------------------------------------------------------------------------------- 2SK1971 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) Maximum Safe Operation Area 1000 300 Drain Current I D (A) 100 30 10 3 1 0.3 0.1 Ta = 25C DC PW = 10 Operation in this area is limited by RDS (on) 200 10 m 10 0 s 1m s( 1 s s ot ) Op er at 100 ion Sh (T c= 25 C ) 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V Drain Current I D (A) 40 30 20 4.5 V 10 VGS = 4 V 0 10 20 30 40 50 0 Typical Transfer Characteristics 50 6V 5.5 V Pulse Test 5V Drain Current I D (A) 40 30 Tc = 25C 20 10 75C -25C VDS = 20 V Pulse Test 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 2SK1971 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 20 16 12 8 4 20 A I D = 10 A 0 4 8 12 16 20 Pulse Test Static Drain to Source on State Resistance R DS (on) ( ) 5 2 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 1 0.5 0.2 0.1 0.05 2 5 10 20 50 100 200 VGS = 10 V 50 A Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 1.0 Static Drain to Source on State Resistance R DS (on) ( ) 0.8 0.6 0.4 0.2 0 -40 10 A Pulse Test VGS = 10 V 50 Forward Transfer Admittance | y fs | (S) Forward Transfer Admittance vs. Drain Current -25C 20 10 5 2 1 Tc = 25C 75C I D = 50 A 20 A VDS = 20 V Pulse Test 0.5 0 40 80 120 160 1 2 Case Temperature Tc (C) 5 10 20 50 Drain Current I D (A) 100 2SK1971 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time t rr (ns) 500 Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 200 100 50 20 10 0.5 di/dt = 100 A/ s, VGS = 0 Ta = 25C 1000 Coss 100 VGS = 0 f = 1 MHz 10 Crss 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics 1000 Drain to Source Voltage V DS (V) 800 600 VDS 400 200 I D = 35 A V DD = 400 V 250 V 100 V Gate to Source Voltage VGS (V) VGS 20 16 12 8 4 0 160 200 1000 500 Switching Time t (ns) 200 Switching Characteristics td(off) tr tf 100 50 20 10 0.5 td(on) VGS = 10 V, VDD = 30 V : Pw = 5 s, duty < 1% = 1 2 5 10 20 50 V DD = 400 V 250 V 100 V 40 80 120 0 Gate Charge Qg (nc) Drain Current I D (A) 2SK1971 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 10 VGS = 10 V VGS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) |
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