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| 2SK1948 Silicon N Channel MOS FET Application High speed power switching TO-3PL Features * * * * * Low on-resistance High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control 2 1 1 3 2 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 50 200 50 200 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1948 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A VGS = 10 V * ID = 25 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 25 A VGS = 10 V RL = 1.2 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.047 10 250 3.0 0.06 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 30 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 5830 2310 265 70 260 430 190 1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 450 -- ns -------------------------------------------------------------------------------------- 2SK1948 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) Drain Current ID (A) Maximum Safe Operation Area 1000 300 100 30 10 3 1 0.3 a are ) his (on in t R DS tion by P era ed Op limit DC W in O= 200 100 1 10 0 0 s s 1 m s pe 10 ra ms tio n (1 S (T c = hot 25 ) C ) Ta = 25C 3 10 30 100 300 1000 0 50 100 150 Case Temperature Tc (C) 0.1 1 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 Drain Current ID (A) 80 6V 60 5.5 V 40 5V 20 4V VGS = 3.5 V 4 8 12 16 20 10 V 8V 50 Pulse Test Drain Current I D (A) 40 30 20 10 Typical Transfer Characteristics Pulse Test VDS = 10 V Tc = 25C -25C 75C 0 0 Drain to Source Voltage VDS (V) 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK1948 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 5 4 3 50 A 2 1 20 A I D = 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Pulse Test Static Drain to Source on State Resistance R DS (on) ( ) Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0.01 0.005 VGS = 10 V Pulse Test 0 2 5 10 20 50 100 200 Drain Current I D (A) Static Drain to Source on State Resistance RDS (on) ( ) 0.2 0.16 0.12 0.08 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test Forward Transfer Admittance vs. Drain Current 100 Forward Transfer Admittance |yfs| (S) 50 20 10 5 2 1 0.5 V DS = 10 V Pulse Test Tc = 25C -25C 75C I D= 50 A 10 A, 20 A 0.04 0 -40 0 40 80 120 160 1 2 5 10 20 50 Case Temperature TC (C) Drain Current I D (A) 2SK1948 Body to Drain Diode Reverse Recovery Time 5000 Reverse Recovery Time t rr (ns) 2000 Capacitance C (pF) 1000 500 200 100 50 1 2 5 10 20 50 100 Reverse Drain Current IDR (A) di/dt = 100 A/s, VGS = 0 Ta = 25C Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 1000 Coss 100 VGS = 0 f = 1 MHz 10 0 Crss 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) 500 400 300 200 100 VDD = 200 V 100 V 50 V 80 160 240 320 Gate Charge Qg (nc) VDD = 200 V 100 V 50 V I D = 50 A V DS Gate to Source Voltage VGS (V) VGS 20 16 12 8 4 0 400 1000 Switching Characteristics t d(off) Switching Time t (ns) 500 200 100 50 20 10 0.5 1 2 5 10 20 50 Drain Current I D (A) VGS = 10 V, VDD = 30 V : PW = 5 s duty 1% tf tr t d (on) 0 |
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