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| 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features * * * * Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch* Channel temperature Storage temperature Note: 1. Value at TC = 25C Tch Tstg 1 Symbol VDSX Ratings -140 -160 -180 -200 15 -500 -500 1.75 30 150 -45 to +150 Unit V V mA mA W W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 1. Pulse test V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss Symbol Min V(BR)DSX -140 -160 -180 -200 15 -0.2 -- 20 -- -- Typ -- -- -- -- -- -- -- 35 120 4.8 Max -- -- -- -- -- -1.5 -2.0 -- -- -- Unit V V V V V V V mS pF pF I G = 10 A, VDS = 0 I D = -10 mA, VDS = -10 V*1 I D = -10 mA, VGD = 0 *1 I D = -10 mA, VDS = -20 V*1 VDS = -10 V, ID = -10 mA, f = 1 MHz Test conditions VGS = 2 V, ID = -1 mA 2 2SJ76, 2SJ77, 2SJ78, 2SJ79 3 2SJ76, 2SJ77, 2SJ78, 2SJ79 4 2SJ76, 2SJ77, 2SJ78, 2SJ79 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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