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| 2SJ386 Silicon P Channel MOS FET Application TO-92Mod. High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * * * * 32 D G 1 1. Gate 2. Drain 3. Source S Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch Tch Tstg Ratings -30 20 -3 -5 -3 0.9 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % 2SJ386 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -30 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -24 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.3 10 -10 -2.5 0.4 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -2 A VGS = -10 V * ID = -2 A VGS = -4 V * ID = -1 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -2 A VGS = -10 V RL = 15 ------------------------------------------------ -- 0.55 0.8 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf 1.0 1.7 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time -- -- -- -- -- -- -- 177 120 59 8 28 45 60 -- -- -- -- -- -- -- pF pF pF ns ns ns ns ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SJ386 Maximum Channel Dissipation Curve Pch (W) 1.6 I D (A) -10 -3 -1 -0.3 -0.1 Maximum Safe Operation Area 100 s PW 1 m 1.2 s = 10 Channel Power Dissipation m s 0.8 Drain Current 0.4 Operation in this area is limited by R DS(on) C D n tio ra pe O -0.03 -0.01 0 50 100 150 Ta (C) 200 -0.1 Ta = 25 C 1 shot pulse -0.3 -1 -3 -10 -30 -100 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -2.0 -5 V -4 V -3.5 V -5 -3 V Typical Transfer Characteristics V DS = -10 V Pulse Test I D (A) -1.2 ID Ta = 25 C Pulse Test -2.5 V (A) -1.6 -4 -3 Ta = -25 C 25 C Drain Current Drain Current -0.8 -2 75 C -0.4 VGS = -2 V -1 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ386 Drain to Source Saturation Voltage vs. Gate to Source Voltage Ta = 25 C Pulse Test Drain to Source On State Resistance R DS(on) ( ) -5 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 10 Ta = 25 C 5 Pulse Test -4 2 1 VGS = -4 V -10 V -3 -2 I D = -5 A -1 -3 A -1 A 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) 0.5 0.2 0.1 -0.1 -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 Static Drain to Source on State Resistance R DS(on) ( ) I D = -3 A 0.8 V GS = -4 V 0.6 I D = -5 A 0.4 -3 A 0.2 0 -40 VGS = -10 V -1 A -1 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Forward Transfer Admittance vs. Drain Current 10 5 Ta = -25 C 2 25 C 1 0.5 75 C 0.2 0.1 -0.1 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 Drain Current I D (A) -10 0 40 80 Ambient Temperature 120 160 Ta (C) 2SJ386 Typical Capacitance vs. Drain to Source Voltage V DS (V) 1000 500 Capacitance C (pF) 200 100 50 Dynamic Input Characteristics V DD = -30 V -20 V -10 V V GS (V) Gate to Source Voltage 0 I D = -3 A 0 -10 -4 Ciss Coss Crss VGS = 0 f = 1 MHz 0 -10 -20 -30 -40 -50 Drain to Source Voltage -20 V DD = -30 V -20 V -10 V V GS -8 -30 V DS -12 20 10 -40 -50 0 -16 -20 20 Drain to Source Voltage V DS (V) 4 8 12 16 Gate Charge Qg (nc) Switching Characteristics 200 tf t d(off) 20 10 5 2 V GS = -10 V, V DD = -30 V PW = 2 s, duty < 1 % -0.5 -1 -2 -5 Reverse Drain Current vs. Source to Drain Voltage -5 Reverse Drain Current I DR (A) Pulse Test -4 100 Switching Time t (ns) 50 -3 tr t d(on) -10 V -5 V V GS = 0 -2 -1 -0.05 -0.1 -0.2 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain Current I D (A) Source to Drain Voltage V SD (V) |
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