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| 2SJ278 Silicon P Channel MOS FET Application UPAK High speed power switching 1 32 Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * * * * 4 2, 4 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -60 20 -1 -4 -1 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is "MY". 2SJ278 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -60 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.7 5 -10 -2.25 0.83 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -0.5 A VGS = -10 V * ID = -0.5 A VGS = -4 V * ID = -0.5 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -0.5 A VGS = -10 V RL = 60 ------------------------------------------------ -- 0.9 1.2 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.6 1.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time -- -- -- -- -- -- -- -- 160 80 28 7 8 30 25 -1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -1 A, VGS = 0 IF = -1 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 90 -- s -------------------------------------------------------------------------------------- 2SJ278 Power vs. Temperature Derating 2.0 Pch** (W) I D (A) -5 -3 -1 Maximum Safe Operation Area 1 10 0 0s s s m s (1 PW 1.5 = D -0.3 -0.1 10 1 C m Channel Dissipation Drain Current O 1.0 Operation in this area is limited by R DS(on) pe ra sh tio ot n ) 0.5 -0.03 0 50 100 150 Ta (C) 200 Ambient Temperature -0.01 Ta = 25 C -0.005 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -2.0 -10 V -6 V -4 V Pulse Test -3 V -1.2 (A) Typical Transfer Characteristics -1.0 V DS = -10 V Pulse Test I D (A) -1.6 -0.8 ID Drain Current -0.6 75 C -0.4 25 C Tc = -25 C Drain Current -0.8 -2.5 V -0.4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -10 V DS (V) -8 -0.2 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ278 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test I D = -1 A Drain to Source On State Resistance R DS(on) ( ) -1.0 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 VGS = -4 V -10 V -0.8 -0.6 -0.5 A -0.4 0.2 0.1 -0.2 -0.2 A 0 -2 -4 -6 Gate to Source Voltage -10 V GS (V) -8 0.05 -0.05 -0.1 -0.2 -0.5 -1 -2 Drain Current I D (A) -5 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 1.6 -1 A 1.2 VGS = -4 V -0.5 A -0.2 A -0.5 A -0.2 A -1 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 2.0 Forward Transfer Admittance vs. Drain Current 5 2 1 0.5 Tc = -25 C 25 C 75 C 0.8 -10 V 0.4 0 -40 0.2 0.1 V DS = -10 V Pulse Test 0.05 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SJ278 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) di/dt = 50 A/s VGS = 0, duty < 1 % Typical Capacitance vs. Drain to Source Voltage 1000 200 100 50 Ciss 100 Coss Crss 10 VGS = 0 f = 1 MHz 1 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) 20 10 5 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) V DD = -10 V -25 V -40 V V GS (V) 0 0 500 Switching Characteristics V GS = -10 V, V DD = -30 V PW = 2 s, duty < 1 % Switching Time t (ns) 200 100 50 20 10 5 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -20 -4 Drain to Source Voltage -40 V DS V DD = -10 V -25 V -40 V -8 Gate to Source Voltage t d(off) tf -60 -12 V GS -80 -16 -20 20 t d(on) tr -100 0 4 9 12 16 Gate Charge Qg (nc) Drain Current I D (A) 2SJ278 Reverse Drain Current vs. Source to Drain Voltage -1.0 Reverse Drain Current I DR (A) Pulse Test -0.8 -10 V -5 V -0.6 -0.4 V GS = 0, 5 V -0.2 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain to Source Voltage V DS (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveforms 90% Vin 10 V 50 V DD = 30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf |
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