 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SJ247 Silicon P Channel MOS FET Application TO-220AB High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter 2 1 1 23 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -100 20 -8 -32 -8 40 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc=25C 2SJ247 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -100 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -80 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.25 10 -250 -2.0 0.3 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4A VGS = -10 V * ID = -4 A VGS = -4 V * ID = -4A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -4A VGS = -10 V RL = 7.5 ------------------------------------------------ -- 0.3 0.45 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3.0 5.5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time -- -- -- -- -- -- -- -- 880 325 80 12 47 150 75 -1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -8 A, VGS = 0 IF = -8 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 170 -- ns -------------------------------------------------------------------------------------- 2SJ247 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area -50 -30 -10 Drain Current I D (A) PW 10 s 10 0 s = 1 40 10 m s -3 -1 m n tio ra ) pe C O 25 C D c= (T s (1 Sh ot ) 20 -0.3 -0.1 Operation in this area is limited by R DS (on) Ta = 25C 0 50 100 150 -0.05 -1 -3 -10 -30 -100 -300 -1000 Case Temperature Tc (C) Drain to Source Voltage VDS (V) -20 -16 Drain Current I D (A) Typical Output Characteristics -10 V -6 V Pulse Test -4.5 V Drain Current I D (A) Typical Transfer Characteristics -10 -8 -6 -4 -2 Pulse Test VDS = -10 V -25C Tc = 75C 25C -12 -8 -4 -4 V -3.5 V -3 V -2.5 V 0 -4 -8 -12 -16 -20 0 -2 -4 -6 -8 -10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 2SJ247 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage -5 Static Drain to Source on State Resistance RDS (on) ( ) -4 -3 -2 -5 A -1 -2 A Pulse Test ID = -10 A 5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 2 1 0.5 0.2 0.1 0.05 -0.5 -1 VGS = -4 V -10 V 0 -2 -4 -6 -8 -10 -2 -5 -10 -20 -50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 1.0 0.8 0.6 0.4 0.2 VGS = -10 V Forward Transfer Admittance vs. Drain Current 50 Forward Transfer Admittance |y fs | (s) Static Drain to Source on State Resestance RDS (on) ( ) Pulse Test -10 A -5 A 20 10 5 2 1 Pulse Test VDS = -10 V Tc = -25C 25C -4 V -2 A -2,-5 A -10 A 75C 0 -40 0 40 80 120 160 0.5 -0.1 -0.2 Case Temperature Tc (C) -0.5 -1 -2 -5 Drain Current I D (A) -10 2SJ247 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 C (pF) 100 50 20 10 0.5 -0.2 di/dt = 50 A/ s VGS = 0 10000 3000 1000 300 100 Typical Capacitance vs. Drain-Source Voltage VGS = 0, f = 1 MHz Ciss Capacitance Coss Crss 30 10 0 -10 -20 -30 Drain to Source Voltage -40 -50 VDS (V) -0.5 -1 -2 -5 -10 -20 Reverse Drain Current I DR (A) Dynamic Input Characteristics 0 Drain to Source Voltage VDS (V) -20 -40 -60 -80 I D = -8 A VGS -16 -20 100 Gate to Source Voltage VGS (V) VDD = -10 V -25 V -50 V -50 V -25 V VDD = -10 V 0 -4 -8 -12 500 200 100 50 20 10 Switching Characteristics VGS = -10 V, VDD = -30 V :. Pw = 2 s, duty 1% t d (off) VDS Switching Time t (ns) tf tr t d (on) -0.5 -1 -2 -5 Drain Current I D (A) -10 -100 0 20 40 60 80 Gate Charge Qg (nc) 5 -0.1 -0.2 |
Price & Availability of 2SJ247
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |