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| Transistors 2SB0790 (2SB790) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0969 (2SD969) 6.90.1 Unit: mm 2.50.1 (1.0) (1.5) (0.4) (1.5) s Features q q 2.00.2 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.50.1 (1.0) 2.40.2 0.450.05 R 0.9 R 0.7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -25 -20 -7 -1 - 0.5 600 150 -55 ~ +150 Unit V V V A A mW C C 1:Base 2:Collector 3:Emitter 3 1.00.1 (0.85) 2 (2.5) 1 (2.5) 1.250.05 0.550.1 M-A1 Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -25V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IC = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -500mA, IB = -50mA*2 IC = -500mA, IB = -50mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 150 15 *2 min typ max -100 -1 Unit nA A V V V -25 -20 -7 90 25 - 0.4 -1.2 220 V V MHz 25 pF Pulse measurement *1h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 Rank hFE1 Note.) The Part number in the Parenthesis shows conventional part number. Publication date: August 2002 SJC00057AED 4.10.2 4.50.1 1 2SB0790 PC -- Ta 800 -1.2 Ta=25C 700 -1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 IB=-10mA IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) - 0.8 -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA - 0.6 - 0.4 - 0.3 - 0.1 Ta=75C 25C -25C - 0.2 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC -100 hFE -- IC IC/IB=10 600 VCE=-2V 320 fT -- I E VCB=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) -1 -3 -10 -30 -10 -3 25C -1 75C Ta=-25C Forward current transfer ratio hFE 280 240 200 160 120 80 40 400 300 Ta=75C 25C 200 -25C 100 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 80 Collector output capacitance Cob (pF) 70 60 50 40 30 20 10 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 SJC00057AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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