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Bulletin I2080 rev. B 11/01 SD200N/R SERIES STANDARD RECOVERY DIODES Stud Version Features Wide current range High voltage ratings up to 2400V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types 200A Typical Applications Converters Power supplies Machine tool controls High power drives Medium traction applications Major Ratings and Characteristics Parameters SD200N/R 400 to 2000 IF(AV) @ TC IF(RMS) IFSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V RRM range TJ 200 110 314 4700 4920 110 101 400 to 2000 - 40 to 180 2400 200 110 314 4700 4920 110 101 2400 150 A C A A A KA2s KA2s V C Units case style DO-205AC (DO-30) www.irf.com 1 SD200N/R Series Bulletin I2080 rev. B 11/01 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 SD200N/R 08 12 16 20 24 VRRM , maximum repetitive peak reverse voltage V 400 800 1200 1600 2000 2400 VRSM , maximum nonrepetitive peak rev. voltage V 500 900 1300 1700 2100 2500 IRRM max. @ TJ = TJ max. mA 15 Forward Conduction Parameter I F(AV) I F(AV) Max. average forward current @ Case temperature Max. average forward current @ Case temperature I F(RMS) Max. RMS forward current I FSM Max. peak, one-cycle forward, non-repetitive surge current SD200N/R 200 110 220 100 314 4700 4920 3950 4140 Units Conditions A C A C A DC @ 95C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave 180 conduction, half sine wave I 2t Maximum I2t for fusing 110 101 78 71 I 2 t Maximum I2t for fusing 1100 0.90 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage r f1 r f2 V FM Low level value of forward slope resistance High level value of forward slope resistance Max. forward voltage drop V 1.00 (I > x IF(AV)),TJ = TJ max. (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. m 0.64 1.40 V (I > x IF(AV)),TJ = TJ max. Ipk= 630A, TJ = TJ max, tp = 10ms sinusoidal wave 0.79 2 www.irf.com SD200N/R Series Bulletin I2080 rev. B 11/01 Thermal and Mechanical Specifications Parameter TJ Tstg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case case to heatsink T wt Max. allowed mounting torque 10% Approximate weight Case style 14 120 DO-205AC(DO-30) Nm g See Outline Table SD200N/R 400 to 2000 -40 to 180 -55 to 200 0.23 0.08 2400 150 Units C Conditions K/W DC operation Mounting surface, smooth, flat and greased Not lubricated threads R thCS Max. thermal resistance, RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.041 0.049 0.063 0.093 0.156 0.030 0.051 0.068 0.096 0.157 K/W Conditions TJ = TJ max. Ordering Information Table Device Code SD 1 20 2 0 3 N 4 24 5 P 6 B 7 C 8 1 2 3 4 5 6 7 - Diode Essential part number 0 = Standard recovery N = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) Voltage code: Code x 100 = VRRM (See Voltage Ratings table) P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A M = Stud base DO-205AC (DO-30) M12 X 1.75 B = Flag top terminal (for Cathode/ Anode Leads) S = Isolated lead with silicone sleeve (Red = Reverse Polarity; Blue = Normal Polarity) None = Non isolated lead 8 - C = Ceramic Housing (over 1600V) V = Glass-metal seal (only up to 1600V) www.irf.com 3 SD200N/R Series Bulletin I2080 rev. B 11/01 Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. 6.5 (0.26) MIN. 35 (1.38) MAX. C.S. 16mm (0.015 s.i.) 2 SW 27 2.6 (0.10) MAX. DIA. 8.5 (0.33) NOM. 157 (6.18) 170 (6.69) 55 (2.16) MIN. DIA. 22.5 (0.88) MAX. 29 (1.14) MAX. 21 (0.82) MAX. 12.5 (0.49) MAX. Conforms to JEDEC DO-205AC (DO-30) 1/2"-20UNF-2A* All dimensions in millimeters (inches) * FOR METRIC DEVICE: M12 X 1.75 GLASS-METAL SEAL 16.5 (0.65) MAX. 6.5 (0.26) MIN. 35 (1.38) MAX. C.S. 16mm (0.015 s.i.) 2 2.6 (0.10) MAX DIA. 8.5 (0.33) NOM. 157 (6.18) 170 (6.69) 55 (2.16) MIN. DIA. 23.5 (0.93) MAX. 24 (0.94) MAX. 21 (0.82) MAX. 12.5 (0.49) MAX. SW 27 1/2"-20UNF-2A* * FOR METRIC DEVICE: M12 X 1.75 4 www.irf.com SD200N/R Series Bulletin I2080 rev. B 11/01 Outline Table CERAMIC HOUSING 16.5 (0.65) 5.6 (0.22) DIA. 5.54 (0.22) 9.5 (0.37) 45 (1.77) DIA. 22.5 (0.88) MAX. 29 (1.14) M AX. 12.5 (0.49) 21 (0.82) MAX . MAX. 1/2"-20UNF-2A* *FOR METRIC DEVICE. M12 X 1.75 2.4 (0.09) 27 (1.06) 40.5 (1.59) MAX . DO-205AC (DO-30) Flag All dimensions in millimeters (inches) GLASS-METAL SEAL 16.5 (0.65) 5.6 (0.22) DIA. 5.54 (0.22) 9.5 (0.37) DIA. 23.5 (0.93) MAX. 36.5 (1.44) 1/2"-20UNF-2A* 2.4 (0.09) 24 (0.94) MAX. 21 (0.82) MAX. 27 (1.06) 12.5 (0.49) MAX. 41 (1.61) MAX. *FOR METRIC DEVICE. M12 X 1.75 www.irf.com 5 SD200N/R Series Bulletin I2080 rev. B 11/01 M axim um Allow a ble C a se T em pe ratur e ( C ) M a xim um Allow ab le C a se Tem perature ( C ) 180 170 160 150 140 130 120 110 30 100 0 40 80 12 0 160 20 0 240 Average Forw ard C urrent (A) Fig. 1 - Current Ratings Characteristics C o nd uctio n A ngle SD 200N/R Series R thJC (D C ) = 0.23 K/W 18 0 17 0 16 0 15 0 14 0 13 0 12 0 11 0 10 0 90 0 50 100 SD 200N/R Series R thJ C (D C ) = 0.23 K/W C o nd uctio n Period 90 60 30 1 50 120 180 2 00 250 DC 30 0 35 0 60 90 120 180 Average F orw ard C urrent (A) Fig. 2 - Current Ratings Characteristics M axim um Averag e F orw ard Pow er Loss (W ) 300 250 200 180 120 90 60 30 RM S Lim it R 0. 12 th S 0. 0. 0. 4 2 A 3 K/ W W K/ = K/ W W 0.0 /W 8K K/ -D e lt a 0. 6 R K/ W 150 C o nd uction A ngle 0 .8 K/W 100 50 0 SD 200N/R Series T J = 180 C 1 .4 K /W 1 .8 K/ W 0 50 100 150 200 20 250 40 60 80 1 0 0 1 2 0 14 0 1 60 1 8 0 A vera g e Forw a rd C urren t (A ) M a xim um Allow ab le A m b ien t T em perature ( C ) Fig. 3 - Forward Power Loss Characteristics M a xim um Ave rag e Forw ard Pow er Loss (W ) 400 hS Rt 350 300 250 200 150 DC 180 120 90 60 30 A = 0. 08 K/ W W 0. 0. 2 12 K/ K/ W -D el 0. ta 3K R /W 0 .4 K/ W 0.6 RM S Lim it C o nd uctio n P erio d K/ W 0 .8 K/ W 100 50 0 0 50 100 150 SD 200N /R Series T J = 180 C 1 .4 K /W 1 .8 K / W 200 250 300 350 20 40 60 80 1 00 1 2 0 14 0 1 60 1 8 0 Averag e Forw a rd C urrent (A) M a xim um A llow ab le Am bient Tem pera ture ( C ) Fig. 4 - Forward Power Loss Characteristics 6 www.irf.com SD200N/R Series Bulletin I2080 rev. B 11/01 P eak Half Sine W ave Fo rw ard C u rren t (A) Peak Half Sin e W a ve Fo rw a rd C urrent (A ) 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 15 0 0 10 0 0 1 10 10 0 N um b er O f Eq ua l A m p litud e H a lf C y cle C urrent P u lses (N ) A t A n y Rated Lo ad C on d ition A nd W ith Ra ted V RRM A p p lied Fo llow ing Surg e. In itia l T J = 180 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s 5000 4500 4000 3500 3000 2500 2000 1500 M ax im um Non Repe titive Surge C urrent V ersus P ulse Train D ura tion . In itial T J = 180 C No V olta g e Rea pp lied Ra ted V RRM Reapp lied SD 200N /R Se ries SD 200N/R Series 1000 0.01 0.1 Pulse Tra in D uration (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10 0 0 0 Instantaneous Forw ard C urrent (A) SD 200N /R Serie s 1 00 0 TJ = 25 C TJ = 180 C 100 0.5 1 1.5 2 2 .5 3 3.5 In sta nt an eous Forw a rd V olta ge (V ) Fig. 7 - Forward Voltage Drop Characteristics 1 Tran sient Th erm al Im pedanc e Z thJC (K /W ) Steady State Value: R thJC = 0.23 K/W (D C O peration) 0.1 SD 200N/R Series 0 .01 0 .001 0.0 1 0.1 Square W ave Pulse D uration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com 7 SD200N/R Series Bulletin I2080 rev. B 11/01 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/01 8 www.irf.com |
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