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| Data Sheet No. PD 10039C PVDZ172N Microelectronic Power IC HEXFET(R) Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A General Description The PVDZ172N Photovoltaic Relay is a single-pole, normally open solid state relay that can replace electromechanical relays used for general purpose switching of DC loads. It utilizes International Rectifier's HEXFET power MOSFET as the output switch, driven by an integrated circuit photovoltaic generator of novel construction. The output switch is controlled by radiation from a GaAlAs light emitting diode (LED) which is optically isolated from the photovoltaic generator. These units overcome the limitations of both electromechanical and reed relays by offering the solid-state advantages of high sensitivity, miniaturization, no contact bounce, long operational life, insensitivity to external magnetic fields, shock and vibration, and high reliability inherent with solid state technology. They are ideally suited for switching high currents or low level signals without distortion or injection of electrical noise. These relays are packaged in 8-pin, molded DIP packages and available with through-hole and surface-mount (gull-wing) leads, in plastic shipping tubes. Features 250m On-Resistance Bounce-Free Operation 1.5 Amp capacity 4,000 VRMS I/O Isolation Solid-State Reliability UL recognized ESD Tolerance: 4000V Human Body Model 500V Machine Model Applications Portable Electronics Programmable Logic Controllers Computers and Peripheral Devices Audio Equipment Power Supplies and Power Distribution Instrumentation Part Identification PVDZ172N PVDZ172NS through-hole surface-mount (gull-wing) (HEXFET is the registered trademark for International Rectifier Power MOSFETs) PVDZ172N Electrical Specifications (-40C TA =+85C unless otherwise specified) INPUT CHARACTERISTICS Minimum Control Current (see figures 1 and 2) Maximum Control Current for Off-State Resistance @ T A=+25C Control Current Range (Caution: Current limit input LED, see figure 6) Maximum Reverse Voltage Limits 10 0.4 5.0 to 25 7.0 Units mA mA mA V OUTPUT CHARACTERISTICS Operating Voltage Range Maximum Load Current 40C (see figures 1 and 2) Maximum Pulsed Load Current @TA=+25C (100 ms @ 10% duty cycle) Maximum Turn-On Time @TA=+25C (see figure 7) For 500mA, 50VDC Load, 10mA Control Maximum Turn-Off Time @TA=+25C (see figure 7) For 500mA, 50VDC Load, 10mA Control Maximum On State Resistance @TA=+25C(pulsed) (see figure 4) 1.0A load, 10mA Control Minimum Off State Resistance @TA=+25C @ 48 VDC (see figure 5) Minimum Off-State dv/dt Output Capacitance (see figure 9) 10 8 1000 150 250 0.5 0 to 60 1.5 4.0 2.0 Units V(DC) A(DC) A(DC) ms ms m Ohms V/s pF @ 50 VDC GENERAL CHARACTERISTICS Dielectric Strength, Input-Output Insulation Resistance, Input-Output , 90 VDC Capacitance, Input-Output Lead Temperature (1.6mm below seating plane) for 10 seconds Ambient Temperature Range: Operating Storage Limits 4000 1012 @TA=+25C - 50% RH 1.0 +260 -40 to +85 -40 to +100 Units V(RMS) pF C C C Wiring Diagrams 8 Anode Schematic Cathode 5 Source DC Drain Electromechanical Analogy 2 www.irf.com PVDZ172N 1.8 2.00 ILED = 10mA 1.5 1.75 1.50 Max. Load Current (A) 1.2 Max. Load Current (A) ILED = 5mA (Typical) 0.9 1.25 1.00 0.75 0.6 0.50 0.3 +25 deg. C 0.25 +80 deg. C +60 deg. C 3 4 5 +40 deg. C 0 0 20 40 60 80 100 0 1 2 Ambient Temperature (deg. C) LED Control Current (mA) Figure 1. Current Derating Curves 1.6 Figure 2. Typical Control Current Requirements 400 +40 deg. C 1.4 350 +25 deg. C 1.2 +80 deg. C 300 +60 deg. C Load Current (A) 1.0 Rd-on (mOhm) 250 0.8 200 0.6 150 ILED = 10mA 0.4 100 0.2 50 0 0 0.1 0.2 0.3 0.4 0.5 0 -40 -20 0 20 40 60 80 100 Vds (V) Ambient Temperature (deg. C) Figure 3. Typical On-Characteristics 100 20 30 Figure 4. Typical On-Resistance Id-off/Id-off 25 deg. C CAUTION: provide current limiting so that 25 mA maximum steadystate control current rating is not exceeded 16 deg . C limit Input Current (mA) 10 12 Min. device and +85 8 1.0 0.3 4 0.1 -35 0 -15 5 25 45 65 85 105 0 0.5 1.0 1.5 2.0 Ambient Temperature (deg. C) LED Forward Voltage Drop (Volts DC) Figure 5. Typical Normalized Off-State Leakage Figure 6. Input Characteristics (Current Controlled) www.irf.com Max. device and 3.0 TYPICAL -40 deg. C limi t 3 PVDZ172N 20 1000 750 10 I LED Typical Capacitance (pF) tdly ton toff LED Current (mA) 500 90% toff tdly ton 5 250 ID 3 20 50 100 200 500 1000 2000 10% 0 0 10 20 30 40 50 Delay Time (microseconds) Vds, Drain to Source Voltage (V) Figure 7. Typical Delay Times Figure 8. Delay Time Definitions Figure 9. Typical Output Capacitance Case Outlines 01-2013 00 (MS-001AB) 4 www.irf.com PVDZ172N Case Outlines 01-2019 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 8/5/2000 www.irf.com 5 |
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