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| Data Sheet No.PD 60133-H (NOTE: For new designs, we recommend IR's new products IPS021 and IPS021L) IRSF3011 FULLY PROTECTED POWER MOSFET SWITCH Features * * * * * * * * Extremely rugged for harsh operating environments Over-temperature protection Over-current protection Active drain-to-source clamp ESD protection Lead compatible with standard Power MOSFET Low operating input current Monolithic construction Product Summary Vds(clamp) Rds(on) Ids(sd) Tj(sd) EAS Applications * Solenoid Driver * DC Motor Driver 50V 200mW 7A 165oC 200mJ Description The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections. The on-chip protection circuit latches off the Power MOSFET in case the drain current exceeds 7A (typical) or the junction temperature exceeds 165C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of Power MOSFET, thus improving its performance during turn-off with inductive loads. The input current requirements are very low (300A) which makes the IRSF3011 compatible with most existing designs based on standard Power MOSFETs. Available Packages 3 Lead SOT223 3 Lead TO220AB DRAIN Block Diagram INPUT SOURCE www.irf.com 1 IRSF3011 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (TC = 25oC unless otherwise specified.) Symbol Parameter Vds, max Continuous drain to source voltage Vin, max Continuous input voltage Ids Pd EAS Vesd1 Vesd2 TJop TStg TL Continuous drain current Power dissipation Unclamped single pulse inductive energyA Electrostatic discharge voltage (Human Body Model) Electrostatic discharge voltage (Machine Model) Operating junction temperature range Storage temperature range Lead temperature (soldering, 10 seconds) Min. -- -0.3 -- -- -- -- -- -- -55 -55 -- Max. 50 10 self limited Units V A W mJ V Test Conditions 30 3 200 4000 1000 150 150 300 Tc 25oC, TO220 Tc 25oC, SOT223 100pF, 1.5kW 200pF, 0W o C Static Electrical Characteristics (TC = 25oC unless otherwise specified.) Symbol Parameter V ds,clamp Drain to source clamp voltage Rds(on) Drain to source on resistance Min. 50 -- -- -- -- -- -- -- 1.5 -- -- -- -- 10 -- Typ. 54 56 155 200 115 -- -- 10 2.0 0.25 0.35 0.5 0.6 10.8 1.2 Max. Units Test Conditions -- 62 200 -- -- 10 100 250 2.5 0.6 0.85 1.0 1.2 -- 1.5 V Ids = 10mA Ids = 6A, tp = 700 ms Vin = 5V, Ids = 2A Vin = 4V, Ids = 2A Vin = 10V, Ids = 2A Vds = 12V, Vin = 0V Vds = 50V, Vin = 0V Vds=40V,Vin=0V,Tc=150oC Vds = 5V, Ids = 10mA Vin = 5V Vin = 10V Vin = 5V Vin = 10V Iin = 10mA Ids = -9A, Rin = 1kW mW Idss Drain to source leakage current mA V mA Vth Ii,on Ii, off Input threshold voltage Input supply current (normal operation) Input supply current (protection mode) Vin, clamp Input clamp voltage Vsd Body-drain diode forward drop V Thermal Characteristics Symbol Parameter Rthjc Rthja Rthjc Rthja Junction Junction Junction Junction to case to ambient to case to PCB Min. -- -- -- -- Typ. -- -- -- -- Max. Units Test Conditions 4 60 40 60 TO-220AB o C/W SOT-223 2 www.irf.com IRSF3011 Switching ElectricalCharacteristics (VCC = 14V, resistive load (RL) = 5W , TC= 25C.) Please refer to figure 3 for switching time definitions. Symbol Parameter tdon tr tdoff tf Turn-on delay time Rise time Turn-off delay time Fall time Min. -- -- -- -- -- -- -- -- Typ. Max. Units Test Conditions 160 90 650 250 250 300 180 170 250 -- 1200 -- 350 -- 350 -- Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V nS Protection Characteristics (TC= 25oC unless otherwise specified.) Symbol Parameter Ids(sd) Tj(sd) Vprotect tIresp tIblank Ipeak Vreset treset tTresp Over-current shutdown threshold Over temperature shutdown threshold Min. input voltage for over-temp function Over current response time Over current blanking time Peak short circuit current Protection reset voltage Protection reset time Over-temperature response time Min. 5 155 -- -- -- -- -- -- -- Typ. 7 165 3 4 4 16 1.3 8 12 Max. Units Test Conditions 10 -- -- -- -- -- -- -- -- o A C V Vin = 5V Vin = 5V, Ids = 2A See Figure 4 for definition See Figure 4 for definition See Figure 4 for definition See Figure 5 for definition See Figure 6 for definition mS A V mS Temperature Coefficients of Electrical Characteristics (Please see Figures 7 through 18 for more data on thermal characteristics of other electrical parameters. Symbol Parameter Vds,clamp Vth Vin,clamp Ids(sd) Drain-to-source clamp voltage T.C. Input threshold voltage T.C. Input clamp voltage T.C. Over-current shutdown threshold T.C. Min. -- -- -- -- Typ. 18.2 -2.7 7.0 -9.8 Max. Units Test Conditions -- -- -- -- Ids = 10mA mV/oC Vds = 5V, Ids = 10mA Iin = 10mA mA/oC Vin = 5V NOTES: x When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer to International Rectifier Application Note AN-994. y EAS is tested with a constant current source of 6A applied for 700mS with Vin = 0V and starting Tj = 25oC. z Input current must be limited to less than 5mA with a 1kW resistor in series with the input when the Body-Drain Diode is forward biased. www.irf.com 3 IRSF3011 Lead Assignments 2 (D) (2) D 1 In 2 D 3 S 123 In D S 3 Lead - SOT223 IRSF3011L 3 Lead - TO220 IRSF3011 Part Number Case Outline 3 Lead - TO220 2 NOTES: 2X IRGB 01-3026 01 4 www.irf.com IRSF3011 Case Outline 3 Lead - SOT-223 IRGB X01-3032 00 www.irf.com 5 IRSF3011 Tape & Reel - SOT223 01-0028 05 / 01-0008 02 V in V in 5V RL = 0 Vcc = 14V 50% t Vds 90% t I ds I peak 10% t tdon tr tdoff tf t Iblank Short applied before turn-on t Iresp Short applied after turn-on t Figure 3 Definition of Switching Times Figure 4 Definition of I peak , t Iblank , t Iresp 6 www.irf.com IRSF3011 V in 5V V in 5V t I ds t < t reset I ds(sd) t > t reset t I ds t R L = 1 mH Vcc = 14V t Tresp R L = 10 Vcc = 14V T J = TJSD + 5C t Figure 5 Definition of treset Figure 6 Definition of tTresp 250 T = 25C 225 300 Ids = 4A 250 Rds(on) (mOhm) 200 175 Vin = 5V 150 Vin = 8V 125 Vin = 10V 100 1 2 3 4 5 6 7 8 50 -50 -25 0 25 50 75 100 125 150 Ids (A) Rds(on) (mOhm) Vin = 4V Vin = 5V 200 150 Vin = 10V 100 Temperature (C) Figure 7 On Resistance vs. Drain-to-Source Current Figure 8 On Resistance vs. Temperature Fig. 4 - On Resistance vs. Temperature www.irf.com 7 IRSF3011 8 T = 25C Shut Down Current (A) 9 Vin = 5V Shut Down Current (A) 4 5 6 7 8 9 10 8 7.5 7 7 6 6.5 5 6 4 -50 -25 0 25 50 75 100 125 150 Input Voltage (Volts) Temperature (C) Figure 9 Over-Current Shutdown Threshold vs. Input Voltage Figure 10 Over-Current Shutdown Threshold vs.Temperature 1.6 T=25C 1.4 0.6 Vin = 5V 0.5 Iin,off Input Current (mA) Input Current (mA) 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 Iin,on Iin,off 0.4 0.3 0.2 Iin,on 0.1 0 -50 -25 0 25 50 75 100 125 150 Input Voltage (Volts) Temperature (C) Figure 11 Input Current vs. Input Voltage Figure 12 Input Current vs.Temperature 8 www.irf.com IRSF3011 0.9 0.8 Rise Time, On Delay (S) 0.7 0.6 0.5 Rise Time 0.4 0.3 0.2 0.1 0 3 4 5 6 7 8 9 10 11 Input Voltage (Volts) On Delay T = 25C Rise Time, On Delay (S) 0.9 0.8 0.7 0.6 0.5 Vin = 5V 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 Temperature (C) On Delay Rise Time Figure 13 Turn-On Characteristics vs. Input Voltage Figure 14 Turn-On Characteristics vs. Temperature 0.4 T = 25C 0.35 Fall Time, Off Delay (S) Fall Time, Off Delay (S)) Off Delay 0.3 0.25 0.2 0.15 Fall Time 0.1 0.05 0 3 4 5 6 7 8 9 10 11 Input Voltage (Volts) 0.4 Vin = 5V 0.35 Off Delay 0.3 0.25 0.2 0.15 Fall Time 0.1 0.05 0 -50 -25 0 25 50 75 100 125 150 Temperature (C) Figure 15 Turn-Off Characteristics vs. Input Voltage Figure 16 Turn-Off Characteristics vs. Temperature www.irf.com 9 IRSF3011 10 Single Pulse Energy to Failure (mJ) 2000 Vdd=25V 1750 Ids = 4A 1500 1250 1000 750 500 250 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 25 50 75 100 125 150 Source to Drain Voltage (Volts) Starting Junction Temperature (C) Reverse Drain Current (A) T = 150C T = 25C 1 Figure 17 Source-Drain Diode Forward Voltage Figure 18 Unclamped Single Pulse Inductive Energy to Failure vs. Starting Junction Temperature Application Information Introduction Protected monolithic POWER MOSFETs offer simple, cost effective solutions in applications where extreme operating conditions can occur. The margin between the operating conditions and the absolute maximum values can be narrowed, resulting in better utilization of the device and lower cost. ESD protection also reduces the off-circuit failures during handling and assembly. The TO-220 packaged IRSF3011 / IRSF3012 offers an easy upgrade with direct pin-to-pin replacement from non-protected devices. Block Diagram As illustrated in figure A1, a zener diode between the input and the source provides the ESD protection for the input and also limits the voltage applied to the input to 10V. The R-S flip-flop memorizes the occurrence of an error condition and controls the Q2 and Q3 switches. The flip-flop can be cleared by holding the input low for the specified minimum duration. COMP1 and COMP2 comparators are used to compare the over-current and over-temperature signals with the built-in reference. Either comparator can reset the fault flip-flop and turn Q1 off. During fault condition, Q2 disconnects the gate of Q1 from the input, and Q3 shorts the gate and source of Q1, resulting in rapid turn-off of Q1. The zener diode between the gate and drain of Q1 turns Q1 on when the drain to source voltage exceeds 55V. www.irf.com General Description The IRSF3011 is a fully protected monolithic Nchannel logic level POWER MOSFET with 200mW (max) on-resistance. The built-in protections include over-current, over-temperature, ESD and over-voltage. The over-current and over-temperature protections make the IRSF3011 / IRSF3012 indestructible under any load conditions in switching or in linear applications. The built-in ESD protection minimizes the risk of ESD damage when the device is off-circuit. The IRSF3011 / IRSF3012 is fully characterized for avalanche operation and can be used for fast deenergization of inductive loads. 10 IRSF3011 Switching Characteristics In the IRSF3011, the control logic and the protection circuits are powered from the input pin. When positive voltage appears at the input pin, the R-S flip-flop turns Q2 on and connects the gate of the main device to the input. The turn-on speed is limited by the channel resistance of Q2 and the gate charge requirements of Q1. The typical switching waveforms at 5V input voltage are shown in Figure A2. Using higher input voltage will improve the turn-on time but it will not affect the turnoff switching speed. Input voltage 5V/div. Drain voltage 5V/div. Drain Current: 1A/div. Time: 1msV/div. Figure A3. Switching waveforms with 7V Input voltage Figure A1. Block Diagram The typical waveforms at 7V input voltage are shown in Figure A3. In typical switching applications (below 60kHz) the difference in switching losses between the IRSF3011 / IRSF3012 and the same size standard MOSFET is negligible. Input voltage 5V/div. Over-Current Protection When the drain current exceeds the preset limit, the protection circuit resets the internal flip-flop and turns Q1 off. Normal operation can be restored by holding the input voltage below the specified threshold level (approx. 1.3V) for the specified minimum treset time. The typical waveforms at over-current shut-down are shown in Figure A4. After turn-on, the current in the inductor at the drain starts ramping up. At about 7A, the over-current protection shuts down the device. Drain voltage 5V/div. Drain Current: 1A/div. Time: 1msV/div. Figure A2. Waveforms switching clamped inductive load using 5V input voltage Over-Temperature Protection Figure A5 illustrates the operation of the over-temperature protection. The IRSF3011 / IRSF3012 switches a 2W resistive load to a 10V power supply. When the thermal balance is established, the junction temperature is limited on a pulse-by-pulse basis. 11 www.irf.com IRSF3011 Input voltage 5V/div. Input voltage 10V/div. Drain voltage 5V/div. Drain voltage 5V/div. Drain Current: 2A/div. Drain Current: 2A/div. Time: 10msV/div. Figure A4. Waveforms at over-current shut-down Time: 10msV/div. Figure A5. Over-temperature shut-down Over-Voltage Protection When the drain-to-source voltage exceeds 55V, the zener diode between gate and drain turns the IRSF3011 / IRSF3012 on before the breakdown voltage of the drain-source diode is reached. This greatly enhances the energy the device can safely withstand during inductive load turn-offs compared to avalanche breakdown. Thus the device can be used for fast de-energization of inductive loads. The absorbed energy is limited only by the maximum junction temperature. 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