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| PD - 9.1540B IRLMS1902 HEXFET(R) Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) N-Channel MOSFET , , $ , , 5 VDSS = 20V # Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. / ! " RDS(on) = 0.10 Top View M icro6 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 3.2 2.6 18 1.7 13 12 5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Min. --- Typ. --- Max 75 Units C/W 1/12/98 IRLMS1902 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.70 3.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.032 --- --- --- --- --- --- --- --- 4.7 0.97 1.8 7.0 11 12 4.0 300 120 50 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.10 VGS = 4.5V, ID = 2.2A 0.17 VGS = 2.7V, ID = 1.1A --- V V DS = V GS, ID = 250A --- S V DS = 10V, ID = 1.1A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 125C 100 V GS = 12V nA -100 VGS = -12V 7.0 ID = 2.2A 1.5 nC VDS = 16V 2.6 VGS = 4.5V, See Fig. 6 and 9 --- VDD = 10V --- ID = 2.2A ns --- RG = 6.0 --- RD = 4.4, See Fig. 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 40 37 1.7 A 18 1.2 60 55 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.2A, VGS = 0V TJ = 25C, I F = 2.2A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. ISD 2.2A, di/dt 110A/s, VDD V(BR)DSS, TJ 150C IRLMS1902 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.75V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.75V TOP 10 10 1 1 1.75V 1.75V 0.1 0.1 1 20s PULSE WIDTH TJ = 25 C 10 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.2A I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 1.0 1 0.5 0.1 1.5 V DS = 10V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLMS1902 600 500 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 2.2A VDS = 16V 8 C, Capacitance (pF) 400 Ciss 300 6 4 200 Coss Crss 100 2 0 1 10 100 0 0 2 4 FOR TEST CIRCUIT SEE FIGURE 9 6 8 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 10 100us TJ = 150 C 1ms 1 TJ = 25 C 1 10ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 0.1 1 TC = 25 C TJ = 150 C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLMS1902 QG VDS VGS RD 4.5V VG QGS QGD D.U.T. + RG - VDD 4.5V Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50K 12V .2F .3F 90% D.U.T. VGS 3mA + V - DS 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 100 D = 0.50 Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 P DM 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRLMS1902 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS IRLMS1902 Package Outline Micro6 Outline 3 .0 0 (.1 1 8 ) 2 .8 0 (.1 1 1 ) LE AD A SS IG N MEN T S -B D D S R EC O MME N D E D FO O T PR IN T 2 X 0. 9 5 (.0 3 7 5 ) 6 X (1 .06 (.0 4 2 ) 1 .7 5 (.0 6 8 ) 1 .5 0 (.0 6 0 ) -A - 6 1 5 2 4 3 3 .00 (.1 1 8 ) 2 .60 (.1 0 3 ) 6 1 5 2 4 3 2 .20 (.0 8 7 ) 0.9 5 ( .0 3 7 5 ) 2X 0 .1 5 6X D 0 .5 0 (.0 19 ) 0 .3 5 (.0 14 ) D G 6 X 0 .6 5 (. 02 5 ) (.0 06 ) M C A S B S 0 -1 0 1 .30 (.0 5 1 ) 0 .90 (.0 3 6 ) -C 0 .1 5 (.0 0 6 ) M A X. 1 .45 (.0 5 7 ) 0 .90 (.0 3 6 ) 0 .1 0 (.0 0 4 ) 6 SU R F A C E S O O 6X 0 .2 0 (.0 0 7 ) 0 .0 9 (.0 0 4 ) 0 .6 0 (.0 2 3 ) 0 .1 0 (.0 0 4 ) NO TES : 1 . D IM E NS IO N IN G & T O L E R A N C IN G P E R A NS I Y 1 4 .5 M -1 98 2 . 2 . C O NT R O L L IN G D IM E NS IO N : M IL L IM E T E R . 3 . D IM E NS IO N S A R E S HO W N IN M IL L IM E T E R S (IN C H E S ). Part Marking Information Micro6 E X A M P L E : T H IS IS A N IR L M S 6 70 2 P ART NU M BER DATE CO D E W O RK W EEK 01 02 03 04 YE A R 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K W O RK W EEK 27 28 29 30 W A B C D YE A R 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 W A B C D TOP W AFE R LO T NUMBER CO DE BO TT O M P A R T N U M B E R E X A M P L E S: 2 A = IR LM S 1 9 0 2 2 B = IR LM S 1 5 0 3 2 C = IR L M S 6 7 0 2 2 D = IR L M S 5 7 0 3 D A T E C O D E E X A M P LE S : YW W = 9 6 0 3 = 6 C YW W = 9 6 3 2 = FF 24 25 26 X Y Z 50 51 52 X Y Z W O R K W E E K = (1 -2 6 ) IF P R E C E D E D B Y L AS T D IG IT O F C A LE N D E R Y EA R W O R K W E E K = ( 2 7 -5 2 ) IF P R E C E D E D B Y A L E T T E R IRLMS1902 Tape & Reel Information Micro6 8m m 4mm F E E D D IR E C T IO N N OTE S : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 1 7 8.0 0 ( 7 .0 08 ) M AX . 9 .9 0 ( .3 90 ) 8 .4 0 ( .3 31 ) NO T E S : 1. C O N T R O L L IN G D IM E NS IO N : M IL L IM E T E R. 2. O U T L IN E CO NF O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 1/98 |
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