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| PD 9.1375 PRELIMINARY Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. IRL2910 HEXFET (R) Power MOSFET VDSS = 100V RDS(on) = 0.026 ID = 48A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 48 34 190 150 1.0 20 520 29 15 7.4 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 1.0 --- 62 Units C/W C/W C/W IRL2910 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. 100 --- --- --- --- 1.0 28 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.026 VGS = 10V, I D = 29A 0.030 VGS = 5.0V, I D = 29A 0.040 VGS = 4.0V, I D = 24A 2.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 29A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 140 ID = 29A 20 nC VDS = 80V 81 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 50V --- ID = 29A ns --- RG = 1.4, VGS = 5.0V --- RD = 1.7, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package 7.5 --- and center of die contact 3700 --- VGS = 0V 630 --- pF VDS = 25V 330 --- = 1.0MHz, See Fig. 5 Typ. --- 0.12 --- --- --- --- --- --- --- --- --- --- --- --- 11 100 49 55 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 240 1.8 48 A 190 1.3 350 2.7 V ns C Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = 29A, V GS = 0V TJ = 25C, I F = 29A di/dt = 100A/s Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25C, L = 1.2mH R G = 25, IAS = 29A. (See Figure 12) ISD 29A, di/dt 490A/s, V DD V(BR)DSS, T J 175C Pulse width 300s; duty cycle 2%. IRL2910 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 100 10 10 2.5V 2.5V 1 0.1 20s PULSE WIDTH T J = 25C 1 10 A 100 1 0.1 20s PULSE WIDTH T J = 175C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 175oC 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 48A I D , Drain-to-Source Current (A) 2.5 100 TJ = 25C TJ = 175C 2.0 1.5 10 1.0 0.5 1 2.0 2.5 3.0 3.5 4.0 V DS = 50V 20s PULSE WIDTH 4.5 5.0 5.5 6.0 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL2910 6000 5000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd 15 I D = 29A V DS = 80V V DS = 50V V DS = 20V 12 C, Capacitance (pF) 4000 9 3000 Coss 2000 6 Crss 1000 3 0 1 10 100 A 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 A 200 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) 100 10s 100 100s TJ = 175C TJ = 25C 10 1ms 10ms 10 0.4 0.8 1.2 1.6 VGS = 0V A 1 1 T C = 25C T J = 175C Single Pulse 10 100 A 1000 2.0 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL2910 VDS 50 RD VGS RG 40 D.U.T. VDD ID, Drain Current (Amps) 5.0V 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 0 25 50 75 100 125 150 A 175 TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 PD M 0.1 0.10 0.05 0.02 0.01 N otes: 1 . D uty fac tor D = t t 1 t 2 SINGLE PULSE (THERMAL RESPONSE) 1 /t 2 0.01 0.00001 2. P ea k TJ = P D M x Z th J C + T C A 10 0.0001 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL2910 EAS , Single Pulse Avalanche Energy (mJ) 1400 15V TOP 1200 ID 12A 20A BOTTOM 29A V DS L DRIVER 1000 RG 20V tp D.U.T IAS 800 + V - DD A 600 0.01 400 Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS tp 200 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 5.0 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRL2910 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG * * * * dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRL2910 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRF1010 9246 9B 1M DATE CODE (YYWW) YY = YEAR WW = WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371 Data and specifications subject to change without notice. 11/95 |
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