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PD - 90880B
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)
Product Summary
Part Number Radiation Level R DS(on) IRH9130 100K Rads (Si) 0.3 IRH93130 300K Rads (Si) 0.3
IRH9130 100V, P-CHANNEL
RAD Hard HEXFET TECHNOLOGY
TM (R)
ID -11A -11A
International Rectifier's RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-204AA
Features:
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -11 -7.0 -44 75 0.6 20 190 -11 7.5 -10 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s) 11.5 (Typical )
g
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1
8/20/01
IRH9130
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min Typ Max Units
-- -0.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 0.3 0.325 -4.0 -- -25 -250 -100 100 45 10 25 30 50 70 70 -- V V/C V S( ) A
Electrical Characteristics
Parameter
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -7.0A VGS = -12V, ID = -11A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -7.0A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -11A VDS = -50V VDD =-50V, ID = -11A VGS =-12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance -- VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 2.5 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns nH
Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1200 300 74
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -11 -44 -3.0 250 0.84
Test Conditions
A
V nS C Tj = 25C, IS = -11A, VGS = 0V Tj = 25C, IF = -11A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Min Typ Max Units
-- -- -- -- 1.67 -- 30 0.12 --
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRH9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Min
100K Rads(Si)1
Max
Min -100 -2.0 -- -- -- -- --
300K Rads (Si)2
Max V
Units Units
Test Conditions
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
-100 -2.0 -- -- -- -- --
-- -4.0 -100 100 -25 0.3 -3.0
-- -5.0 -100 100 -25 0.3 -3.0
nA A V
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-7A VGS = 0V, IS = -11A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br I LE T MeV /(mg/cm)) 28 36.8 59.9 E nergy (MeV ) 285 305 345 Range (m) 43 39 32.8 V DS (V ) @VGS =0V -100 -100 -60 @VGS =5V -100 -100 -- @VGS =10V -100 -70 -- @VGS =15V -70 -50 -- @VGS =20V -60 -40 --
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRH9130
Pre-Irradiation
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
10
10
-5.0V
-5.0V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -11A
-I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
2.0
1.5
10
1.0
0.5
1
V DS = -50V 20s PULSE WIDTH 5 6 7 8 9 10 11 12 13
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRH9130
2000
-VGS , Gate-to-Source Voltage (V)
1600
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -11A
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
Ciss
1200
12
800
8
Coss
400
4
Crss
0 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50 60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 25 C
1
-ID , Drain Current (A) I
TJ = 150 C
100
100us 10 1ms
0.1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0
1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRH9130
Pre-Irradiation
12
VDS
10
RD
VGS RG
D.U.T.
+
-ID , Drain Current (A)
8
VGS
6
Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
2
VGS
0
25
50
75
100
125
150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
10
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D =1 / t 2 t 2. Peak T=P DM x ZthJC + T J C 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
VDD
Pre-Irradiation
IRH9130
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
400
RG
D.U.T
IAS
-20V VGS
DRIVER
0.01
VDD A
300
ID -4.9A -7.0A BOTTOM -11A TOP
tp
200
15V
100
Fig 12a. Unclamped Inductive Test Circuit
I AS
0
25
50
75
100
125
150
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
12V
50K .2F .3F
12 V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRH9130
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L=3.1mH Peak IL = -11A, VGS =-12V ISD -11A, di/dt -480A/s, VDD -100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-204AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01
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