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| PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Fast CoPack IGBT VCES = 1200V VCE(sat) 2.9V G @VGE = 15V, IC = 25A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 1200 45 25 90 90 16 90 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- -- Typ. -- -- 0.24 -- 6 (0.21) Max. 0.64 0.83 -- 40 -- Units C/W g (oz) Revision 1 C-293 IRGPH50FD2 Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A -- 1.1 -- V/C VGE = 0V, IC = 1.0mA -- 2.1 2.9 IC = 25A V GE = 15V -- 2.5 -- V IC = 45A See Fig. 2, 5 -- 3.0 -- IC = 25A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 7.5 17 -- S VCE = 100V, I C = 25A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 6500 VGE = 0V, V CE = 1200V, T J = 150C -- 2.5 3.0 V IC = 16A See Fig. 13 -- 2.1 2.5 IC = 16A, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 82 16 30 77 75 360 320 3.2 5.8 9.0 70 70 660 640 16.2 13 2400 140 28 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 100 IC = 25A 21 nC VCC = 400V 43 See Fig. 8 -- TJ = 25C -- ns IC = 25A, V CC = 800V 540 VGE = 15V, R G = 5.0 470 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 13.5 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 25A, V CC = 800V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 135 ns TJ = 25C See Fig. 245 TJ = 125C 14 I F = 16A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 V R = 200V 675 nC TJ = 25C See Fig. 1838 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. C-294 IRGPH50FD2 30 D u ty c y c le : 5 0 % TJ = 1 2 5 C T s in k = 9 0 C G a te d riv e a s s p e ci fie d T u rn -o n lo s s e s in clu d e e ffe c ts o f re v e rs e r e c o v e ry P o w e r D is s ip a tio n = 4 0 W Load Current (A) 20 6 0 % o f ra te d v o lta g e 10 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 10 00 1000 I C , C ollector-to-E mitter C urrent (A ) IC , C ollector-to-E mitter C urrent (A ) TJ = 25 C 1 00 100 TJ = 1 50 C TJ = 15 0C 10 TJ = 2 5 C 10 1 1 1 V G E = 1 5V 2 0 s P U LS E W IDTH 10 0.1 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 20 VC E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-295 IRGPH50FD2 50 V C E , C olle ctor-to-E m itte r V olta ge (V ) V G E = 15 V 4.0 VG E = 1 5 V 80 s P U L S E W ID TH I C = 50 A M aximum D C Collector Current (A ) 40 3.0 30 I C = 25 A 20 2.0 I C = 1 3A 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herma l R espo nse (Z thJ C ) D = 0.5 0 0.2 0 0.1 0.1 0 0 .0 5 SIN G LE P U LSE (TH ER MA L R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0.02 0.01 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0 001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D ura tion (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-296 IRGPH50FD2 50 0 0 40 0 0 Cies 30 0 0 Coes 20 0 0 V G E , G ate-to-Em itter V oltage (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0 V I C = 2 5A 16 C, C apacitance (pF) 12 8 10 0 0 Cres 4 0 1 10 100 0 0 20 40 60 80 1 00 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 9.6 Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TC IC = 800V = 15V = 25C = 25A 100 RG = 5 V GE = 15V V CC = 800V I C = 50A 9.4 I C = 25A 10 9.2 I C = 13A 9.0 8.8 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-297 IRGPH50FD2 40 30 I C , C o llec to r-to-E m itter C urrent (A ) Total Switching Losses (mJ) RG TC V CC V GE = 5 = 150C = 800V = 15V 1000 VG E E 20 V G= T J = 12 5C 100 S A FE O P E RA TING A RE A 20 10 10 0 0 10 20 30 40 50 A 60 1 1 10 100 1000 10000 I C , Collector-to-Emitter Current (A) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - VFM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-298 IRGPH50FD2 300 40 VR = 200V TJ = 125C TJ = 25C 30 200 VR = 200V TJ = 125C TJ = 25C I F = 16A I F = 8.0A I RRM - (A) trr - (ns) IF = 32A 20 I F = 32A I F = 16A I F = 8.0A 100 10 0 100 di f /dt - (A/s) 1000 0 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C 900 VR = 200V TJ = 125C TJ = 25C 600 I F = 16A di(rec)M/dt - (A/s) I F = 32A Q RR - (nC) 100 I F = 32A I F =16A I F = 8.0A I F = 8.0A 300 0 100 di f /dt - (A/s) 1000 10 100 1000 di f /dt - (A/s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-299 IRGPH50FD2 90% Vge Same type device as D.U.T. +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1+5S Vce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr = trr id dt tx t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix H: Section D - page D-10 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 -JEDEC Outline TO-247AC C-300 Section D - page D-13 |
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