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| PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 900V VCE(sat) 3.7V @VGE = 15V, I C = 11A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 900 20 11 40 40 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 1.2 -- 40 -- Units C/W g (oz) C-255 Revision 0 IRGPF30F Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 900 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.83 -- V/C VGE = 0V, I C = 1.0mA -- 2.6 3.7 IC = 11A V GE = 15V -- 3.3 -- V IC = 20A See Fig. 2, 5 -- 2.9 -- IC = 11A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 3.6 6.9 -- S VCE = 100V, I C = 11A -- -- 250 A VGE = 0V, V CE = 900V -- -- 1000 VGE = 0V, V CE = 900V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 22 33 IC = 11A 5.1 7.7 nC VCC = 400V See Fig. 8 8.0 12 VGE = 15V 27 -- TJ = 25C 9.7 -- ns IC = 11A, V CC = 720V 160 280 VGE = 15V, R G = 23 140 240 Energy losses include "tail" 0.33 -- 0.67 -- mJ See Fig. 9, 10, 11, 14 1.0 1.9 27 -- TJ = 150C, 12 -- ns IC = 11A, V CC = 720V 260 -- VGE = 15V, R G = 23 250 -- Energy losses include "tail" 2.0 -- mJ See Fig. 10, 14 13 -- nH Measured 5mm from package 560 -- VGE = 0V 50 -- pF VCC = 30V See Fig. 7 7.3 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-256 IRGPF30F 30 F or bo th : T ria n g u la r w a v e : L O A D C U R R E N T (A ) D u ty c yc le : 5 0 % TJ = 1 2 5 C T s ink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 2 4 W 20 S q u are w av e: 6 0 % o f ra te d v o lta g e C la m p v o lta g e : 8 0 % o f ra te d 10 Id e a l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 T J = 2 5C I C , C ollector-to-E mitter C urrent (A ) TJ = 25 C TJ = 15 0 C I C , Collector-to-Em itter C urrent (A ) T J = 1 50 C 10 10 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 1 5 10 V C C = 1 00 V 5 s P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-257 IRGPF30F 20 V G E = 15 V 5.0 VG E = 1 5 V 80 s P UL S E W ID TH IC = 2 2A 16 V C E , C ollector-to-E m itter V oltage (V) Maxim um D C Collector C urrent (A ) 4.0 12 8 3.0 I C = 11 A 4 I C = 5.5A 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T herm al Response (Z thJ C ) 1 D = 0.5 0 0.20 0.10 PD M 0.1 0 .05 0 .0 2 0 .0 1 S IN G L E PU LS E (TH E R MAL RE S PO N SE ) t 1 t 2 N o te s : 1 . D u ty f ac t or D = t 1 /t 2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-258 IRGPF30F 1 0 00 8 00 Cies 6 00 Coes 4 00 V G E , G ate-to-E m itter V oltage (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 00 V I C = 1 1A 16 C , C ap ac ita nc e (pF ) 12 8 2 00 Cres 4 0 1 10 10 0 0 0 5 10 15 20 25 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1 .1 0 1 .0 8 T o tal S w itc hing Los se s (m J) Total S w itching L osse s (mJ) VC C VG E TC IC = 7 20 V = 15 V = 25 C = 1 1A 10 R G = 22 V GE = 1 5 V V CC = 72 0V I C = 22A 1 .0 6 I C = 1 1A 1 .0 4 1 I C = 5.5A 1 .0 2 1 .0 0 0 .9 8 20 25 30 35 40 45 50 55 0.1 -60 -40 -20 0 20 40 60 80 100 120 14 0 160 R G , G ate R es istance ( ) W TC , C ase Tem peratu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-259 IRGPF30F 6.0 Total Sw itching Losses (m J) 5.0 I C , C ollec to r-to -E m itter C u rre nt (A ) RG TC V CC VGE = 22 = 150 C = 7 20 V = 15 V 100 VG E E 20 V G= T J = 12 5C S A FE O P E R A TIN G A R E A 4.0 10 3.0 2.0 1 1.0 0.0 0 5 10 15 20 25 0.1 1 10 100 1000 I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-260 |
Price & Availability of 2001
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