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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 1PS88SB48 Schottky barrier diodes Product specification Supersedes data of 1999 Apr 26 2002 Nov 07 Philips Semiconductors Product specification Schottky barrier diodes FEATURES * Ultra fast switching speed * Low forward voltage * Small SMD package * Guard ring protected * Low capacitance. APPLICATIONS * High speed switching * Circuit protection * Voltage clamping. DESCRIPTION The 1PS88SB48 consists of two dual Schottky barrier diodes with common cathodes, fabricated in planar technology and encapsulated in the small SOT363 SMD plastic package. 6 handbook, halfpage 5 4 1PS88SB48 PINNING PIN 1 2 3 4 5 6 anode (a1) anode (a2) common cathode (k1) anode (a3) anode (a4) common cathode (k2) DESCRIPTION 6 5 4 1 Top view 2 3 1 MBL733 2 3 Marking code: 8t5. Fig.1 Simplified outline (SOT363; SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms - - - - -65 - -65 40 120 120 200 +150 150 +150 V mA mA mA C C C PARAMETER CONDITIONS MIN. MAX. UNIT 2002 Nov 07 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.2 IF = 1 mA IF = 10 mA IF = 40 mA IR Cd Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT363 (SC-88) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 30 V; note 1; see Fig.3 VR = 40 V; note 1; see Fig.3 VR = 0; f = 1 MHz; see Fig.5 380 500 1 1 10 5 PARAMETER CONDITIONS 1PS88SB48 MAX. UNIT mV mV V A A pF VALUE 416 UNIT K/W 2002 Nov 07 3 Philips Semiconductors Product specification Schottky barrier diodes GRAPHICAL DATA 1PS88SB48 102 handbook, halfpage IF (mA) 10 MLC361 103 handbook, halfpage IR (A) (1) MLC362 102 10 (1) (2) (3) (4) (2) 1 1 10-1 10-1 (3) 10-2 10-2 0 0.2 0.4 0.6 0.8 VF (V) 1 0 10 20 30 VR (V) 40 (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (4) Tamb = -40 C. (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. 10 3 handbook, halfpage r diff () 102 MLC364 MLC363 handbook, halfpage 5 Cd (pF) 4 3 2 10 1 1 10 1 0 1 10 IF (mA) 102 0 10 20 30 VR (V) 40 f = 10 KHz. f = 1 MHz; Tamb = 25 C. Fig.4 Differential forward resistance as a function of forward current; typical values. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 2002 Nov 07 4 Philips Semiconductors Product specification Schottky barrier diodes PACKAGE OUTLINE Plastic surface mounted package; 6 leads 1PS88SB48 SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2002 Nov 07 5 Philips Semiconductors Product specification Schottky barrier diodes DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION 1PS88SB48 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Nov 07 6 Philips Semiconductors Product specification Schottky barrier diodes NOTES 1PS88SB48 2002 Nov 07 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp8 Date of release: 2002 Nov 07 Document order number: 9397 750 10283 |
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