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PD - 9.1145
IRGPC50MD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short circuit rated -10s @125C, VGE = 15V * Switching-loss rating includes all "tail" losses * HEXFREDTM soft ultrafast diodes * Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast CoPack IGBT
VCES = 600V VCE(sat) 2.0V
G
@VGE = 15V, IC = 35A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C I CM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
TO -2 4 7 AC
Max.
600 60 35 120 120 25 120 10 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.24 ----6 (0.21)
Max.
0.64 0.83 -----40 ------
Units
C/W
g (oz)
IRGPC50MD2
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES /T J Temperature Coeff. of Breakdown Voltage---Collector-to-Emitter Saturation Voltage ---VCE(on) ------VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 11 gfe Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---IGES V(BR)CES Typ. ---0.62 1.8 2.3 2.0 ----14 20 ------1.3 1.2 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, IC = 1.0mA 2.0 IC = 35A VGE = 15V See Fig. 2, 5 ---V IC = 60A ---IC = 35A, TJ = 150C 5.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 35A 250 A VGE = 0V, VCE = 600V 6500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 25A See Fig. 13 1.5 IC = 25A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Max. Units Conditions 180 IC = 35A 38 nC VCC = 400V 60 See Fig. 8 ---TJ = 25C ---ns IC = 35A, VCC = 480V 510 VGE = 15V, RG = 5.0 400 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 9.5 ---s VCC = 360V, TJ = 125C VGE = 15V, RG = 5.0, VCPK < 500V Turn-On Delay Time ---80 ---TJ = 150C, See Fig. 9, 10, 11, 18 t d(on) Rise Time ---- 110 ---ns IC = 35A, VCC = 480V tr t d(off) Turn-Off Delay Time ---- 610 ---VGE = 15V, RG = 5.0 Fall Time ---- 440 ---Energy losses include "tail" and tf Total Switching Loss ---- 9.4 ---mJ diode reverse recovery. Ets Internal Emitter Inductance ---13 ---nH Measured 5mm from package LE Input Capacitance ---- 2900 ---VGE = 0V Cies Coes Output Capacitance ---- 230 ---pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---30 --- = 1.0MHz Cres Diode Reverse Recovery Time ---50 75 ns TJ = 25C See Fig. t rr ---- 105 160 TJ = 125C 14 IF = 25A Diode Peak Reverse Recovery Current ---- 4.5 10 A TJ = 25C See Fig. Irr ---- 8.0 15 TJ = 125C 15 VR = 200V Diode Reverse Recovery Charge ---- 112 375 nC TJ = 25C See Fig. Q rr ---- 420 1200 TJ = 125C 16 di/dt = 200A/ 250 s di(rec)M/dtDiode Peak Rate of Fall of Recovery ------A/s TJ = 25C See Fig. During t b ---160 Notes: ---TJ = 125CCC=80%(VCES), VGE=20V, L=10H, 17 V Pulse width 5.0s, RG= 5.0, ( See fig. 19 ) single shot. Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Pulse width 80s; duty factor 0.1%. Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. ------------------------------10 Typ. 120 25 40 78 110 340 265 2.1 4.0 6.1 ----
IRGPC50MD2
40
Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified
30
Turn-on losses include effects of reverse recovery Pow er D issipation = 40W
20
10
0 0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C, Collector-to-Emitter Current (A)
100
IC , Collector-to-Emitter Current (A)
25C 150C
100
150C 25C
10
10
1 0.1
VGE = 15V 20s PULSE WIDTH
1 10
1 5 10
V CC = 100V 5s PULSE WIDTH
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGPC50MD2
60
VGE = 15V
3.5
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V 80s PULSE WIDTH
50
I C = 70A
3.0
40
2.5
30
2.0
I C = 35A
20
10
1.5
I C = 17A
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature (C)
TC , Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10 0.05 SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t 1 /t 2 P DM
t
0.02 0.01
1 t2
0.01 0.00001
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
IRGPC50MD2
6000 20
5000
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V, f = 1MHz Cies = C ge + C gc , Cce SHORTED Cres = C gc Coes = Cce + C gc
VCE = 400V I C = 35A
16
C, Capacitance (pF)
Cies
4000
Coes
3000
12
8
2000
Cres
1000
4
0 1 10 100
0 0 30 60 90 120
V CE , Collector-to-Emitter Voltage (V)
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
6.6
6.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 35A
100
RG = 5 V GE = 15V V CC = 480V I C = 70A
6.4
6.3
10
I C = 35A
6.2
I C = 17A
6.1
6.0 0 10 20 30 40 50 60
1 -60 -40 -20
A
0 20 40 60 80 100 120 140 160
R G , Gate Resistance ( )
W
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
IRGPC50MD2
25
I C , Collector-to-Emitter Current (A)
Total Switching Losses (m J)
RG = 5 T C = 150C VCC = 480V 20 VGE = 15V
1000
VGE = 20V GE TJ = 125C
100
15
SAFE OPERATING AREA
10
10
5
0 0 20 40 60 80
A
1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C TJ = 125C
10
TJ = 25C
1 0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRGPC50MD2
140 100
120
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
100
I IRRM - (A)
t rr - (ns)
I F = 50A I F = 25A
10
80
IF = 50A I F = 25A
60
IF = 10A
I F = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif /dt
1500
10000
VR = 200V TJ = 125C TJ = 25C
1200
VR = 200V TJ = 125C TJ = 25C
900
IF = 50A
di(rec)M/dt - (A/s)
- (nC)
Q
RR
1000
IF = 10A
600
I F = 25A
I F = 25A
300
I F = 10A
0 100
I F = 50A
1000 100 100
di f /dt - (A/s)
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M /dt vs. dif/dt
IRGPC50MD2
90% Vge +Vge
Same type device as D.U.T.
Vce
Ic 80% of Vce 430F D.U.T.
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
td(on)
tr
5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
DIODE RECOVERY WAVEFORMS
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRGPC50MD2
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
L 1000V 50V 6000F 100V Vc*
D.U.T.
R L= 0 - 480V
480V 4 X IC @25C
Fig. 19 - Clamped Inductive Load Test Circuit
15.90 (.626) 15.30 (.602) - B3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 - C- D-
Fig. 20 - Pulsed Collector Current Test Circuit
5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOWN MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-247AC.
2X
5.50 (.217) 4.50 (.177)
LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR
* 14.20 (.559)
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
14.80 (.583)
4.30 (.170) 3.70 (.145)
* LONGER LEADED (20mm) VERSION AVAILABLE (TO-247AD)
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)
TO ORDER ADD "-E" SUFFIX TO PART NUMBER
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118)
CAS
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)

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