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2-Phase Stepper-Motor Driver
TLE 4727
Overview Features * 2 x 0.7 amp. outputs * Integrated driver, control logic and current control (chopper) * Fast free-wheeling diodes * Max. supply voltage 45 V * Outputs free of crossover current * Offset-phase turn-ON of output stages * All outputs short-circuit proof * 5 V output for logic supply * Error-flag for overload, open load, overtemperature
Bipolar IC
P-DIP-20-3
Type TLE 4727 Description
Ordering Code Q67000-A9099
Package P-DIP-20-3
The TLE 4727 is a bipolar, monolithic IC for driving bipolar stepper motors, DC motors and other inductive loads that operate on constant current. The control logic and power output stages for two bipolar windings are integrated on a single chip which permits switched current control of motors with 0.7 A per phase at operating voltages up to 16 V. The direction and value of current are programmable for each phase via separate control inputs. A common oscillator generates the timing for the current control and turn-on with phase offset of the two output stages. The two output stages in a full-bridge configuration include fast integrated free-wheeling diodes and are free of crossover current. The device can be driven directly by a microprocessor in several modes by programming phase direction and current control of each bridge independently. A stabilized 5 V output allows the supply of external components up to 5 mA. With the error output the TLE 4727 signals malfunction of the device. Setting the control inputs high resets the error flag and by reactivating the bridges one by one the location of the error can be found.
Semiconductor Group
1
1998-02-01
TLE 4727
10 11 Phase 1 OSC GND GND Q11
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
IEP01191
20 21 Phase 2 Error GND GND Q21
R1
+ VS Q12
R2
+ VL Q22
Figure 1
Pin Configuration (top view)
Semiconductor Group
2
1998-02-01
TLE 4727
Pin Definitions and Functions Pin No. 1, 2, 19, 20 Function Digital control inputs IX0, IX1 for the magnitude of the current of the particular phase.
Iset = 500 mA with RSense = 1
Current Control IX1 IX0 H H L L
1)
Phase Current 0 0.14 x Iset
Iset
Example of Motor Status No current 1) Hold Normal mode Accelerate
H L H L
1.4 x Iset
"No current" in both bridges inhibits the circuit and current consumption will sink below 3 mA.
3
Input Phase 1; controls the current through phase winding 1. On H-potential the phase current flows from Q11 to Q12, on L-potential in the reverse direction. Oscillator; works at typ. 25 kHz if this pin is wired to ground across 2.2 nF. Ground; all pins are connected at leadframe internally. Push-pull outputs Q11, Q12 for phase 1 with integrated freewheeling diodes. Resistor R1 for sensing the current in phase 1. Supply voltage; block to ground, as close as possible to the IC, with a stable electrolytic capacitor of at least 47 F in parallel with a ceramic capacitor of 100 nF. Push-pull outputs Q22, Q21 for phase 2 with integrated free wheeling diodes. Logic supply voltage; internally generated 5 V voltage for logic supply up to 5 mA; short circuit protected. Block to ground with a stable electrolytic capacitor of 4.7 F. Resistor R2 for sensing the current in phase 2.
4 5, 6, 15, 16 7, 10 8 9
11, 14 12
13
Semiconductor Group
3
1998-02-01
TLE 4727
Pin Definitions and Functions (cont'd) Pin No. 17 Function Error output; signals with "low" the errors: open load or short circuit to ground of one or more outputs or short circuits of the load or overtemperature. Input phase 2; controls the current flow through phase winding 2. On H-potential the phase current flows from Q21 to Q22, on L-potential in the reverse direction.
18
Figure 2
Block Diagram
Semiconductor Group
4
1998-02-01
TLE 4727
Absolute Maximum Ratings Temperature Tj = - 40 to 150 C Parameter Supply voltage Error outputs Logic supply voltage Output current of VL Output current Ground current Logic inputs Oscillator voltage
R1, R2 input voltage
Symbol
VS VErr IErr VL IL IQ IGND VIXX VOsc VRX Tj Tstg Rth ja Rth ja
Limit Values min. - 0.3 - 0.3 - - 0.3 -5 -1 -2 - 15 - 0.3 - 0.3 - - 50 - - max. 45 45 3 6.5
1)
Unit Remarks V V mA V mA A A V V V C C C - - - -
1)
Int. limited
1 - 15 6 5 125 150 125 56 40
- - IXX ; Phase X - - Max. 1.000 h -
Junction temperature Storage temperature Thermal resistance Junction ambient Junction ambient (soldered on a 35 m thick 20 cm2 PC board copper area) Junction case Operating Range Supply voltage Current from logic supply Case temperature Output current Logic inputs Error output
K/W - K/W -
Rth
jc
-
18
K/W Measured on pin 5
VS IL TC IQ VIXX VErr IErr
5 - - 40 - 800 -5 - 0
16 5 110 800 6 25 1
V mA C mA V V mA
- - Measured on pin 5 Pdiss = 2 W - IXX ; Phase 1, 2 - -
Semiconductor Group
5
1998-02-01
TLE 4727
Characteristics VS = 6 to 16 V; Tj = - 40 to 130 C Parameter Symbol Limit Values min. Current Consumption from + VS from + VS
IS IS
Unit Test Condition
typ.
max.
1 20
2 30
3 50
mA mA
IXX = H IXX = L; IQ1, 2 = 0 A
Oscillator Output charging current Charging threshold Discharging threshold Frequency Phase Current (VS = 9 to 16 V) Mode "no current" Voltage threshold of current comparator at Rsense in mode: Hold Setpoint Accelerate
IQ Vch Vcs Vca IOsc VOscL VOscH fOsc
90 0.8 1.7 18
120 1.3 2.3 24
135 1.9 2.9 30
A V V kHz
- - - COSC = 2.2 nF
-2
0
2
mA
IX0 = H; IX1 = H IX0 = L; IX1 = H IX0 = H; IX1 = L IX0 = L; IX1 = L
40 450 630
70 500 700
100 570 800
mV mV mV
Logic Inputs (IX1 ; IX0 ; phase X) Threshold Hysteresis Low-input current Low-input current High-input current Error Output Saturation voltage Leakage current
VErrSat IErrL VI VIHy IIL IIL IIH
1.2 - - 10 - 100 -1
1.7 50 -1 - 20 0
2.2 - 1 -5 10
V mV A A A
- - VI = 1.2 V VI = 0 V VI = 5 V
50 -
200 -
500 10
mV A
IErr = 1 mA VErr = 25 V
Semiconductor Group
6
1998-02-01
TLE 4727
Characteristics (cont'd) VS = 6 to 16 V; Tj = - 40 to 130 C Parameter Symbol Limit Values min. Logic Supply Output Output voltage
VL
Unit Test Condition
typ.
max.
4.5
5
6
V
Tj < 150 C 1 mA < IL < 5 mA VS = 6 to 45 V
Thermal Protection Shutdown Prealarm Delta
Tjsd Tjpa Tj
140 120 10
150 130 20
160 140 30
C C K
IQ1, 2 = 0 A VErr = L Tj = Tjsd - Tjpa
Power Output Sink Diode Transistor Sink Pair (D13, T13; D14, T14; D23, T23; D24, T24) Saturation voltage Saturation voltage Reverse current Forward voltage Forward voltage
VsatI VsatI IRI VFI VFI
0.1 0.2 500 0.6 0.7
0.4 0.5 1000 0.95 1
0.6 0.8 1500 1.25 1.3
V V A V V
IQ = - 0.5 A IQ = - 0.7 A VS = VQ = 40 V IQ = 0.5 A IQ = 0.7 A
Power Output Source Diode Transistor Source Pair (D11, T11; D12, T12; D21, T21; D22, T22) Saturation voltage; charge Saturation voltage; discharge Saturation voltage; charge Saturation voltage; discharge Reverse current Forward voltage Forward voltage Diode leakage current
VsatuC VsatuD VsatuC VsatuD IRu VFu VFu ISL
0.6 0.1 0.7 0.2 400 0.7 0.8 0
1.1 0.4 1.2 0.5 800 1.05 1.1 3
1.3 0.7 1.5 0.8 1200 1.35 1.4 10
V V V V A V V mA
IQ = 0.5 A IQ = 0.5 A IQ = 0.7 A IQ = 0.7 A VS = 40 V, VQ = 0 V IQ = - 0.5 A IQ = - 0.7 A IF = - 0.7 A
Semiconductor Group
7
1998-02-01
TLE 4727
Quiescent Current IS versus Supply Voltage VS; bridges not chopping; Tj = 25 C
60
IED01780
Quiescent Current IS versus Junction Temp. Tj; bridges not chopping; VS = 14 V
60
IED01781
S
mA 50
QX =
0.70 0.50
A
S
mA 50
QX = 0.70 A
0.50 A
A
40 0.07 30
A
40 0.07 A 30
20
20
10
10
0 5 10 15 V 20
0 -50
0
50
C
150
VS
Tj
Oscillator Frequency fOSC versus Junction Temperature Tj
30 kHz f OSC
IED01769
Output Current IQX versus Junction Temperature Tj
800 mA 700 600
IED01782
V S = 14 C OSC = 2.2nF
QX
X1 = L, X0 = L
25
500
X1 = L, X0 = H
400 300
20
200 100
15 -50
VS = 14 V RX = 1
0
50
100 C 150 Tj
0 -50
0
50
100 C 150 Tj
Semiconductor Group
8
1998-02-01
TLE 4727
Output Saturation Voltages Vsat versus Output Current IQ
2.0
IED01771
Forward Current IF of Free-Wheeling Diodes versus Forward Voltages VF
1.0
IED01198
V sat
V 1.5
V S = 14 V T j = 25 C
F
A 0.8
V Fl
V Fu
0.6
1.0
V satuC
0.4
T j = 25 C
0.5
V satl V satuD
0.2
0
0
0
0.2
0.4
0.6 A 0.8
0
0.5
1.0
V
1.5
Q
Typical Power Dissipation Ptot versus Output Current IQ (non stepping)
4
IED01772
VF
Permissible Power Dissipation Ptot versus Case Temp. TC (measured at pin 5)
16
IED01783
P tot
W 3
L phase x = 10 mH R phase x = 2 C Osc TC
= 2.2 nF = 25 C
P tot
W 12 10 8
both phases active 2
V S = 14 V
1
T jmax =
150 C 120 C
6 4 2
0
0
0.2
0.4
0.6 A 0.8
0 -25
0
Q
Semiconductor Group 9
25 50 75 100 125 C 175 TC
1998-02-01
TLE 4727
Input Characteristics of IXX , Phase X
Output Leakage Current
Logic Supply Output Voltage versus Output Current IL
6.0
IED01784
Logic Supply Output Voltage versus Junction Temperature Tj
6.0 V
IED01785
VL
V 5.5
T j = 25 C V S = 14 V
VL
5.5
L = 5 mA
VS = 14 V
5.5
5.0
4.5
4.5
4.0
0
1
2
3
4
5 mA 6
4.0 -50
0
50
L
100 C 150 Tj
Semiconductor Group
10
1998-02-01
TLE 4727
+5 V 4.7 F 12 VL 10 11 Phase 1 Q12 Error 20 21 Phase 2 OSC 4 2.2 nF 13 8 GND 5, 6, 15, 16 Q11 7 10 14 11 9 VS 100 nF
+12 V 100 F
1 2 3 MicroController 17 20 19 18
TLE 4727
Q21 Q22
M
Stepper Motor
R2 1
R1 1
IES01204
Figure 3
Application Circuit
11 1998-02-01
Semiconductor Group
TLE 4727
VL
L
+V L
10 F
100 F
100 nF
VS
S
V satu V Fu
+V S
V
XX, Phase X
TLE 4727
Error X Output
Rl Q Ru
V satl
Err
V Err V OSC
Osc
GND
R sense
V Fl
OSC
2.2 nF
SL GND
VC
Rsense
1
IED01786
Figure 4
Test Circuit
12 1998-02-01
Semiconductor Group
TLE 4727
Accelerate Mode
Normal Mode
10 11
Phase 1
H L H L H L
t
t
t
i acc i set
Q1
i set i acc i acc i set
t
Q2
i set i acc
Phase 2 H L H L H L
t
t
t
20 21
t
IED01776
Figure 5
Full-Step Operation
Semiconductor Group
13
1998-02-01
TLE 4727
Accelerate Mode
Normal Mode
10 11
H L H L H L
t
t
Phase 1
t
i acc i set
Q1
- i set - i acc
t
i acc i set
Q2
- i set - i acc Phase 2 H L H L H L
t
t
20 21
t
t
IED01777
Figure 6
Half-Step Operation
Semiconductor Group
14
1998-02-01
TLE 4727
V Osc V Osc V Osc
Rsense 1
0
t
Rsense 2
0
t
t V FU V satl
V Q12 +V S V ca 0 V Q11 +V S V Q22 +V S
t V satu D V satu C
0 V Q21 +VS
t
Q1
i acc
Q2
i acc
t
t
Operating conditions:
VS = 14 V L phase x = 10 mH R phase x = 4
Phase = H XX = L
IED01778
Figure 7
Current Control in Chop-Mode
15 1998-02-01
Semiconductor Group
TLE 4727
V Osc 2.3 V
1.3 V 0V Phase 1 H L Oscillator High Imped. Phase change-over
t t
Rsense 1
0
t
V Q11
+ VS High Impedance
t V Q12
+ VS High Impedance
t
Phase 1
T1
set
fast current decay slow current decay
t
- set slow current decay
IED01779
Operating conditions:
VS = 14 V L phase 1 = 1 mH R phase 1 = 4
11 = H for t < T 1 11 = L for t > T 1 10 = 2X = H
Figure 8
Phase Reversal and Inhibit
16 1998-02-01
Semiconductor Group
TLE 4727
Calculation of Power Dissipation The total power dissipation Ptot is made up of saturation losses Psat quiescent losses Pq switching losses Ps (transistor saturation voltage and diode forward voltages), (quiescent current times supply voltage) and (turn-ON / turn-OFF operations).
The following equations give the power dissipation for chopper operation without phase reversal. This is the worst case, because full current flows for the entire time and switching losses occur in addition.
Ptot = 2 x Psat + Pq + 2 x Ps
where
Psat IN {VsatI x d + VFu (1 - d) + VsatuC x d + VsatuD (1 - d)} Pq
= Iq x V S
V S i D x t DON ( i D + i R ) x t ON I N P S ----- --------------------- + ---------------------------------- + ---- ( t DOFF + t OF F ) T 2 2 4
IN Iq iD iR tp tON tOFF tDON tDOFF T d Vsatl VsatuC VsatuD VFu VS
= nominal current (mean value) = quiescent current = reverse current during turn-ON delay = peak reverse current = conducting time of chopper transistor = turn-ON time = turn-OFF time = turn-ON delay = turn-OFF delay = cycle duration = duty cycle tp / T = saturation voltage of sink transistor (TX3, TX4) = saturation voltage of source transistor (TX1, TX2) during charge cycle = saturation voltage of source transistor (TX1, TX2) during discharge cycle = forward voltage of free-wheeling diode (DX1, DX2) = supply voltage
Semiconductor Group
17
1998-02-01
TLE 4727
+VS Tx2 Tx1 Dx1 L Dx2 Tx4 Tx3 Dx3 Dx4
VC R sense
IET01209
Figure 9
Voltage and Current at Chopper Transistor
Turn-ON
iR iD
Turn-OFF
N
VS + VFu
VS + VFu Vsatl t D ON t ON tp t D OFF t OFF t
IET01210
Figure 10 Voltage and Current at Chopper Transistor
Semiconductor Group 18 1998-02-01
TLE 4727
Application Hints The TLE 4727 is intended to drive both phases of a stepper motor. Special care has been taken to provide high efficiency, robustness and to minimize external components. Power Supply The TLE 4727 will work with supply voltages ranging from 5 V to 16 V at pin VS. Surges exceeding 16 V at VS won't harm the circuit up to 45 V, but whole function is not guaranteed. As soon as the voltage drops below approximately 16 V the TLE 4727 works promptly again. As the circuit operates with chopper regulation of the current, interference generation problems can arise in some applications. Therefore the power supply should be decoupled by a 0.1 F ceramic capacitor located near the package. Unstabilized supplies may even afford higher capacities. Current Sensing The current in the windings of the stepper motor is sensed by the voltage drop across Rsense. Depending on the selected current internal comparators will turn off the sink transistor as soon as the voltage drop reaches certain thresholds (typical 0 V, 0.07 V, 0.50 V and 0.70 V ). These thresholds are not affected by variations of VS. Consequently unstabilized supplies will not affect the performance of the regulation. For precise current level it must be considered, that internal bonding wire (typ. 60 m) is a part of Rsense. Due to chopper control fast current rises (up to 10A/s) will occur at the sensing resistors. To prevent malfunction of the current sensing mechanism Rsense should be pure ohmic. The resistors should be wired to GND as directly as possible. Capacitive loads such as long cables (with high wire to wire capacity) to the motor should be avoided for the same reason. Synchronizing Several Choppers In some applications synchronous chopping of several stepper motor drivers may be desirable to reduce acoustic interference. This can be done by forcing the oscillator of the TLE 4727 by a pulse generator overdriving the oscillator loading currents (approximately 120 A). In these applications low level should be between 0 V and 0.8 V while high level should be between 3 V and 5 V.
Semiconductor Group
19
1998-02-01
TLE 4727
Optimizing Noise Immunity Unused inputs should always be wired to proper voltage levels in order to obtain highest possible noise immunity. To prevent crossconduction of the output stages the TLE 4727 uses a special break before make timing of the power transistors. This timing circuit can be triggered by short glitches (some hundred nanoseconds) at the Phase inputs causing the output stage to become high resistive during some microseconds. This will lead to a fast current decay during that time. To achieve maximum current accuracy such glitches at the Phase inputs should be avoided by proper control signals. To lower EMI a ceramic capacitor of max. 3 nF is advisable from each output to GND. Thermal Shut Down To protect the circuit against thermal destruction, thermal shut down has been implemented. Error Monitoring The error output signals with low-potential one of the following errors: overtemperature short circuit implemented as pre-alarm; appears approximately 20 K before thermal shut down. a connection of one output to GND for longer than 30 s sets an internal error flipflop. A phase change-over of the affected bridge resets the flipflop. Being a separate flipflop for each bridge, the error can be located in such way. the recirculation of the inductive load is watched. If there is no recirculation after a phase change-over, the internal error flipflop is set. Additionally an error is signaled after a phase change-over during hold-mode.
underload
Semiconductor Group
20
1998-02-01
TLE 4727
Package Outlines P-DIP-20-3 (Plastic Dual In-line Package)
7.6 0.2
0.5 min 4.2 max 3.5 0.3
~ 1.2 1.5 max 2.54 20 0.45 +0.1 0.25 20x 11
0.25 +0.1 6.4 -0.2 7.6 +1.2
1 Index Marking
25.3 -0.2
10
0.25 max
GPD05091
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information".
Dimensions in mm
Semiconductor Group
21
1998-02-01

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