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OM6025SA OM6026SA
POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE
400V, 500V, N-Channel, Up To 24 Amp Size 6 MOSFETs, High Energy Capability
FEATURES
* * * * * * Isolated Hermetic Metal Package Size 6 Die, High Energy Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER OM6025SA OM6026SA VDS 400 500 RDS(on) .23 .30 ID (Amp) 24 22
3.1
SCHEMATIC
4 11 R0
3.1 - 93
OM6025SA - OM6026SA
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Parameter VDS VDGR ID @ TC = 25C IDM PD @ TC = 25C Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current2 Pulsed Drain Current2 Maximum Power Dissipation Derate Above 25C Ambient WDSS (1) (2) Single Pulse Energy Drain To Source @ 25C TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/8" from case for 5 secs.) -55 to 150 275 -55 to 150 275 C C 1000 1200 mJ OM6025SA OM6026SA 400 400 24 92 165 .025 500 500 22 85 165 .025 Units V V A A W W/C
Note 1: VDD = 50V, ID = as noted Note 2: Package Pin Limitation ID @ TC = 25C = 25 Amps
THERMAL RESISTANCE (MAXIMUM) at TA = 25C
RthJC RthJA Junction-to-Case Junction-to-Ambient Derate Above 25C Case .76 40 1.32 C/W C/W W/C Free Air Operation
3.1
3.1 - 94
ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS:
(TC = 25 unless otherwise noted) Symbol Min. Typ. Max. Unit Typ. Characteristic Max. Unit
OM6026SA (TC = 25 unless otherwise noted) OM6025SA
Symbol Min.
Characteristic
OFF CHARACTERISTICS OFF CHARACTERISTICS
V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain (VDS = 400 V, VGS = 0) (VDS = 400 V, VGS = 0, TJ = 125 C) nAdc Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR VGS(th) 2.0 1.5 rDS(on) VDS(on) gFS Ciss Coss Crss td(on) (VDD = 250 V, ID = 24 A, Rgen = 4.3 ohms) (VDS = 400 V, ID = 24 A, VGS = 10 V) tr td(off) tf Qg Qgs Qgd VSD (IS = 24 A, d/dt = 100 A/s) ton trr 14 5.6 5.6 mhos 3.0 4.0 3.5 0.23 Ohm Vdc 100 IGSSF 100 nAdc 1.0 nAdc nAdc 0.25 IDSS mAdc V(BR)DSS 400 Vdc IDSS IGSSF IGSSR 100 100 1.0 0.25 mAdc 500 Vdc
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain
(VDS = 500 V, VGS = 0)
(VDS = 500 V, VGS = 0, TJ = 125 C)
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS* ON CHARACTERISTICS*
VGS(th) Gate-Threshold Voltage (VDS = VGS, ID = 0.25 mAdc (TJ = 125 C) Ohm Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 24 A) (ID = 12 A, TJ = 125 C) mhos Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) Vdc gFS 11 8.0 8.0 2.0 1.5 rDS(on) VDS(on) 0.30 3.5 3.0 4.0 Vdc
Gate-Threshold Voltage
Vdc
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125 C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 22 A)
(ID = 11 A, TJ = 125 C)
Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc)
3.1 - 95
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance Output Capacitance Transfer Capacitance f = 1.0 MHz) (VDS = 25 V, VGS = 0, Coss Crss 200 680 5600 pF
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
-
5600 78 230
-
pF
Output Capacitance
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time nC Total Gate Charge Gate-Source Charge Gate-Drain Charge tr Td(off) tf Qg Qgs Qgd VSD Forward On-Voltage Forward Turn-On Time Reverse Recovery Time ton 1.1 1.6 ns 1000 Vdc 60 20 115 140 160 160 190 70 ns
Turn-On Delay Time
-
70 190 160 160 110 20 55
140 -
ns
Rise Time
(VDD = 250 V, ID = 22 A,
Turn-Off Delay Time
Rgen = 4.3 ohms)
Fall Time
VGS = 10 V
Total Gate Charge
(VDS = 400 V, ID = 22 A,
nC
Gate-Source Charge
VGS = 10 V)
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS **
500
SOURCE DRAIN DIODE CHARACTERISTICS
1.1 1.6 Vdc
Forward On-Voltage
Forward Turn-On Time trr
(IS = 22A, d/dt = 100 A/s)
Reverse Recovery Time
**
500 1000
ns
OM6025SA - OM6026SA
* Indicates Pulse Test = 300 sec, Duty Cycle = 2% ** Limited by circuit inductance
3.1
OM6025SC - OM6026SC
PIN CONNECTION
MECHANICAL OUTLINE
.940 .740 .540 .200 .100 2 PLCS. .040 .260 MAX
.250 .290
.125 DIA. 2 PLS.
.540
1
2
3
.125 2 PLCS.
.500 MIN.
1.1 1.2 1.3 1.4 1.5
Pin 1: Drain Pin 2: Source Pin 3: Gate
.150 .300
.040 DIA. 3 PLCS. .150
M-3S
.144 DIA.
.545 .535
.050 .040
.685 .665
.800 .790
.550 .530
1
2
3
.550 .510 .005
2.1 3.1 2.3 2.4
Pin 1: Drain Pin 2: Source Pin 3: Gate
.045 .035 .150 TYP. .260 .249
.150 TYP.
M-PAK
PACKAGE OPTIONS
3.1 3.2
NOTES:
* Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA. * MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
MOD PAK
Z-TAB
6 PIN SIP
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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