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Schottky Barrier Diodes (SBD)
MA3XD15
Silicon epitaxial planar type
Unit : mm
For rectification For protection against reverse current
2.9 - 0.05
2.8 0.65 0.15
+ 0.2 - 0.3 + 0.25
1.5 - 0.05
0.65 0.15
0.95
* Mini type 3-pin package * Low VF or Low IR type: VF < 0.45 V, IR < 100 A * Allowing to rectify under (IF(AV) = 1 A) condition
1.9 0.2
+ 0.2
I Features
1 3 2
0.95
1.45
+ 0.2 - 0.1
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current*1 Average forward current*2 Junction temperature Storage temperature Symbol VR VRRM IFSM IF(AV) Tj Tstg Rating 20 25 3 1.0 125 -55 to +125 Unit V V A A C C
1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin)
Marking Symbol: M5N Internal Connection
1 3 2
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : With a alumina PC board
I Electrical Characteristics Ta = 25C 3C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 20 V IF = 1.0 A VR = 0 V, f = 1 MHz 120 Conditions Min Typ Max 100 0.45 Unit A V pF
Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
0 to 0.1
0.1 to 0.3 0.4 0.2
1.1
0.8
0.16 - 0.06
+ 0.1
0.4 - 0.05
+ 0.1
1
MA3XD15
IF V F
10
Schottky Barrier Diodes (SBD)
IR V R
200
10-2
Ct VR
Terminal capacitance Ct (pF)
0 5 10 15 20 25 30
1
10-3
160
Forward current IF (A)
10-1
Reverse current IR (A)
10-4
120
10-2
10-5
80
10-3
10-6
40
10-4
0
0.1
0.2
0.3
0.4
0.5
0.6
10-7
0
0
4
8
12
16
20
Forward voltage VF
(V)
Reverse voltage VR (V)
Reverse voltage VR (V)
2

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