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| 2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th. Edition June 1, 1998 Features * Low on-resistance R DS =0.026 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 20 25 100 25 20 34 50 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK2929 Electrical Characteristics (Ta = 25C) Item Symbol Min 60 20 -- -- 1.5 -- -- 11 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.026 0.045 17 740 380 140 10 160 100 150 0.95 40 Max -- -- 10 10 2.5 0.034 0.07 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 25A, VGS = 0 I F = 25A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10VNote4 I D = 15A, VGS = 4V Note4 I D = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 15A, VGS = 10V RL = 2 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK2929 Main Characteristics Power vs. Temperature Derating 80 Pch (W) I D (A) 200 100 60 50 20 10 5 2 1 0.5 Maximum Safe Operation Area 10 1 10 PW = C 10 0 s s D m Channel Dissipation Drain Current O s 40 pe s m ) ot sh (1 n (T c = 25 C ra tio 20 Operation in this area is limited by R DS(on) Ta = 25 C ) 0 50 100 150 Tc (C) 200 0.2 0.1 Case Temperature 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) 50 Typical Output Characteristics 10 V 6V 5V (A) Pulse Test 4.5 V 4V Typical Transfer Characteristics 20 V DS = 10 V Pulse Test I D (A) 40 16 30 ID Drain Current 12 Drain Current 20 3.5 V 10 VGS = 3 V 8 Tc = 75C 25C -25C 4 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK2929 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 Drain to Source On State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Drain Current 0.5 1.0 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 0.2 0.6 I D = 15 A 10 A 0.2 5A 0.1 0.4 0.05 VGS = 4 V 10 V 0.02 0.01 0 12 4 8 Gate to Source Voltage 16 V GS (V) 20 0.1 0.2 5 10 20 0.5 1 2 Drain Current I D (A) 50 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 0.08 10 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.10 50 20 10 5 2 1 0.5 0.1 Forward Transfer Admittance vs. Drain Current Tc = -25 C 0.06 V GS = 4 V 0.04 25 C 75 C 2, 5 A 2, 5, 10 A 0.02 10 V 0 -40 0 40 80 Case Temperature Tc 120 (C) 160 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK2929 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di / dt = 50 A / s V GS = 0, Ta = 25 C 5000 Capacitance C (pF) 2000 1000 500 200 100 50 20 10 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 0 VGS = 0 f = 1 MHz 10 20 30 40 50 Crss Coss Ciss Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 0.1 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) I D = 25 A V GS (V) 100 20 1000 300 Switching Characteristics Switching Time t (ns) 80 V DD = 50 V 25 V 10 V V GS 40 16 t d(off) 100 30 10 3 1 0.1 tf tr Drain to Source Voltage 60 V DS 12 Gate to Source Voltage 8 t d(on) 20 V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 V GS = 10 V, V DD = 3 0 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100 0 6 2SK2929 Reverse Drain Current vs. Source to Drain Voltage 20 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 40 I AP = 20 A V DD = 25 V duty < 0.1 % Rg > 50 Reverse Drain Current I DR (A) 16 10 V 5V Pulse Test 32 12 24 8 V GS = 0, -5 V 16 4 8 0 25 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 Source to Drain Voltage 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD 7 2SK2929 Normalized Transient Thermal Impidance@ Normalized Transient THermal Impedance vs. Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m Pulse Width@PW 100 m (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 2SK2929 Package Dimensions (Unit: mm) 10.160.2 2.79 0.2 1.27 9.5 8.0 6.4 - 0.1 + 0.2 f 3.6 - 0.08 + 0.1 4.440.2 1.260.15 18.5 0.5 1.20.1 1.270.1 1.5 max 14.0 0.5 0.50.1 7.8 0.5 0.76 0.1 15.0 0.3 2.54 0.5 2.54 0.5 2.7 max TO-220AB Hitachi Code SC-46 EIAJ -- JEDEC 9 2SK2929 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 10 |
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