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| Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features * Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one CP package, resulting in greatly improved circuitboard using efficiency. * The FC601 is composed of an equivalent chip to the SB007-03CP and an equivalent chip to the RA104C (R1=10k, R2=47k). Package Dimensions unit:mm 2105A [FC601] 1:Collector 2:Cathode 3:Anode 4:Emitter 5:Base SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 30 35 70 2 -55 to +125 -55 to +125 V V mA A VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -6 -100 200 150 -55 to +150 V V V mA mW Symbol Conditions Ratings Unit C C C C Marking:601 Electrical Connection Continued on next page. 1:Collector 2:Cathode 3:Anode 4:Emitter 5:Base SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594TH (KOTO) B8-0026 No.4658-1/4 FC601 Continued from preceding page. Electrical Characteristics at Ta=25C Parameter [TR] Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=20A IF=70mA VR=15V VR=10V, f=1MHz IF=IR=10mA, See specified Test Circuit 620 3.0 10 30 0.55 5 V V A pF ns ICBO ICEO IEBO hFE fT Cob VCB=-40V, IE=0 VCE=-40V, IB=0 VEB=-5V, IC=0 VCE=-5V, IC=-5mA VCE=-10V, IC=-5mA VCB=-10V, f=1MHz -50 -50 -0.6 -0.7 7 -0.8 -1.0 10 0.213 -1.0 -2.0 13 -67 70 200 5.3 -0.1 -0.3 MHz pF V V V V V k -88 -0.1 -0.5 -125 A A A Symbol Conditons Ratings min typ max Unit VCE(sat) IC=-10mA, IB=-0.5mA V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-100A, RBE= VI(off) VI(on) R1 R1/R2 VCE=-5V, IC=-100A VCE=-0.2V, IC=-5mA C/W Trr Test Circuit No.4658-2/4 FC601 No.4658-3/4 FC601 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4658-4/4 |
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